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题名多重散射理论声光耦合波方程的龙格-库塔法数值分析
被引量:5
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作者
朱京平
李阳
唐锐歆
侯洵
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机构
中国科学院西安光学精密机械研究所
西安交通大学电信学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2005年第2期284-287,共4页
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基金
国家自然科学基金资助项目(60007006
60377020)
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文摘
提出利用直观、方便且具有普遍性的 4阶龙格 库塔 (R K)方法求解基于多重散射理论推导出的声光耦合波方程,模拟计算布喇格衍射下衍射效率随各关键参数的变化关系,分析入射光偏离Bragg角对Bragg衍射光效率的影响程度,以及最佳Bragg衍射效率所需参数的选取问题 模拟结果表明:Q(Klein Cook参数) =4π时Bragg衍射效率可达 97%,证实了特征长度作为选取声光互作用长度的合理性.
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关键词
龙格-库塔法
数值分析
耦合波方程
声光布喇格衍射
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Keywords
Runge-Kutta Method
Numerical simulation
coupled-wave equation
Acousto optic bragg diffraction
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分类号
O426.3
[理学—声学]
TN76
[电子电信—电路与系统]
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题名表面波布拉格声光互作用耦合波方程的研究
被引量:1
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作者
刘韬
俞宽新
安伟
李胜明
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机构
北京工业大学应用数理学院
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出处
《光学与光电技术》
2008年第2期40-42,共3页
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文摘
定义了压电晶体的增劲声光系数,它反映压电晶体中声光、电光和压电效应共同作用的结果。从参量互作用基本理论出发,同时考虑声光效应、电光效应和压电效应三个因素,用一个压电增劲声光系数来表示三种因素的共同作用,导出表面波声光布拉格互作用的耦合波方程。并求解得出相应衍射效率的计算公式。该式说明在弱声光互作用条件下,衍射导光波强度与超声功率成正比。表面波声光器件具有体积小、工作稳定、能耗小、易于集成等优点。可以用作光偏转器、光调制器、滤光器。在光通信以及各类实时信号处理,如相关、卷积、频谱分析、矩阵光计算等领域具有广泛的应用前景。
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关键词
表面波
布拉格衍射
声光互作用
耦合波方程
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Keywords
surface acoustic wave
bragg diffraction
acousto-optic interaction
coupled wave equations
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分类号
TN65
[电子电信—电路与系统]
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题名声光耦合理论用于对小角度布拉格衍射的研究
被引量:1
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作者
李芳菊
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机构
渭南师范学院物理与电子工程系
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出处
《渭南师范学院学报》
2011年第2期21-23,28,共4页
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基金
陕西省教育厅专项科研计划项目(2010JK539)
渭南师范学院重点科研计划项目(11YKF013)
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文摘
利用声光耦合理论,得出了小角度布拉格衍射的近似解析解.通过实验测量了不同声功率和驱动频率下的衍射光强,结合理论分析了影响衍射效率的因素,为声光效应实验的研究和理论的应用提供了一定的依据.
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关键词
声光效应
布拉格衍射
耦合波方程
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Keywords
acoustic-optic effect
bragg diffraction
coupled wave equations
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分类号
O436
[机械工程—光学工程]
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题名声光耦合理论用于对小角度布拉格衍射的研究
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作者
盛虹
李芳菊
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机构
渭南师范学院物理与电子工程系
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出处
《科学技术与工程》
北大核心
2012年第3期479-481,共3页
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基金
陕西省科技厅科研项目(2011JM8021)资助
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文摘
利用声光耦合理论,得出了小角度布拉格衍射的近似解析解。通过实验测量了不同声功率和驱动频率下的衍射光强,结合理论分析了影响衍射效率的因素,为声光效应实验的研究和理论的应用提供了一定的依据。
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关键词
声光效应
布拉格衍射
耦合波方程
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Keywords
acoustic-optic effect bragg diffraction coupled wave equations
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分类号
O436
[机械工程—光学工程]
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题名表面等离子体无掩膜干涉光刻系统的数值分析(英文)
被引量:5
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作者
董启明
郭小伟
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机构
电子科技大学光电信息学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第5期558-564,共7页
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基金
The National Natural Science Foundation of China(No.60906052)
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文摘
表面等离子体激元具有近场增强效应,可以代替光子作为曝光源形成纳米级特征尺寸的图像.本文数值分析了棱镜辅助表面等离子体干涉系统的参量空间,并给出了计算原理和方法.结果表明,适当地选择高折射率棱镜、低银层厚度、入射波长和光刻胶折射率,可以获得高曝光度、高对比度的干涉图像.入射波长为431nm时,选择40nm厚的银层,曝光深度可达200nm,条纹周期为110nm.数值分析结果为实验的安排提供了理论支持.
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关键词
干涉光刻
表面等离子体激元
克莱舒曼结构
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Keywords
Interference lithography
Surface plasmon plortiton
Kretschmann structureCLCN: TN305.7 Document Code:A Article ID:1004-4213(2012)05-0558-70 IntroductionThere is a growing interest in exploring new nanolithography techniques with high efficiency,low cost and large-area fabrication to fabricate nanoscale devices for nanotechnology applications.Conventional photolithography has remained a useful microfabrication technology because of its ease of repetition and suitability for large-area fabrication[1].The diffraction limit,however,restricts the fabrication scale of photolithography[2].Potential solutions that have actually been pursued require increasingly shorter illumination wavelengths for replicating smaller structures.It is becoming more difficult and complicated to use the short optical wavelengths to reach the desired feature sizes.Other methods such as electron beam lithography[3],ion beam lithography[4],scanning probe lithography[5],nanoimprint lithography(NIL)[6],and evanescent near-field optical lithography(ENFOL)[7] have been developed in order to achieve nanometer-scale features.As we know,the former three techniques need scanning and accordingly are highly inefficient.In NIL,the leveling of the imprint template and the substrate during the printing process,which determines the uniformity of the imprint result,is a challenging issue of this method.ENFOL have the potential to produce subwavelength structures with high efficiency,but it encounters the fact that the evanescent field decays rapidly through the aperture,thus attenuating the transmission intensity at the exit plane and limiting the exposure distance to the scale of a few tens of nanometers from the mask.In recent years,the use of surface-plasmon polaritons(SPPs) instead of photons as an exposure source was rapidly developed to fabricate nanoscale structures.SPPs are characterized by its near field enhancement so that SPP-based lithography can greatly extend exposure depth and improve pattern contrast.Grating-assisted SPP interference,such as SPP resonant interference nanolithography[8] and SPP-assisted interference nanolithography[9],achieved a sub-100nm interference pattern.The techniques,however,are necessary to fabricate a metal grating with a very fine period and only suitable for small-area interference.To avoid the fabrication of the metal grating,a prism-based SPP maskless interference lithography was proposed in 2006,which promises good lithography performance.The approach offers potential to achieve sub-65nm and even sub-32nm feature sizes.However,the structure parameters are always not ideal in a real system.One wants to know how much influence the parameter variations have on the pattern resolution and what variations of the parameters are allowed to obtain an effective interference.Thus,it is necessary to explore the parameter spaces.1 SPP maskless interference lithography systemThe SPP maskless interference lithography system is shown in Fig.1.A p-polarized laser is divided into two beams by a grating splitter,and then goes into the prism-based multilayer system.Under a given condition,the metal film can exhibit collective electron oscillations known as SPPs which are charge density waves that are characterized by intense electromagnetic fields confined to the metallic surface.If the metal layer Fig.1 Schematic for SPP maskless interference lithography systemis sufficiently thin,plasma waves at both metal interfaces are coupled,resulting in symmetric and antisymmetric SPPs.When the thickness h of metal film,dielectric constant ε1,ε2,ε3 of medium above,inside,below the metal film are specified,the coupling equation is shown as followstanh(S2h)(ε1ε3S22+ε22S1S3)+(ε1ε2S2S3+ε2ε3S1S2)=0
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分类号
TN305.7
[电子电信—物理电子学]
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