A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS's) is proposed.The switching transition of high gain PCSS's can be described with an optically...A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS's) is proposed.The switching transition of high gain PCSS's can be described with an optically activated charge domain. The switching characteristics including rise time,delay and their relationship to electric field strength,optical trigger energies are discussed.The formation and radiation transit,accumulation of the charge domain are related with the triggering and sustaining phases of PCSS's,respectively.The results of the mathematical model on this mechanism agree with experimental results.展开更多
A 4 mm gap semi-insulating （SI） GaAs photoconductive switch （PCSS） was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the swi...A 4 mm gap semi-insulating （SI） GaAs photoconductive switch （PCSS） was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear （lock-on） mode. The phenomenon is analyzed as follows： an exciton effect contributes to photoconduction in the generation and dissociation of ex- citons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the S1-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.展开更多
文摘A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS's) is proposed.The switching transition of high gain PCSS's can be described with an optically activated charge domain. The switching characteristics including rise time,delay and their relationship to electric field strength,optical trigger energies are discussed.The formation and radiation transit,accumulation of the charge domain are related with the triggering and sustaining phases of PCSS's,respectively.The results of the mathematical model on this mechanism agree with experimental results.
基金Project supported by the National Natural Science Foundation of China(Nos.50837005,10876026)the State Key Laboratory of Electrical Insulation for Power Equipment(No.EIPE09203).
文摘A 4 mm gap semi-insulating （SI） GaAs photoconductive switch （PCSS） was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear （lock-on） mode. The phenomenon is analyzed as follows： an exciton effect contributes to photoconduction in the generation and dissociation of ex- citons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the S1-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.
