采用0.13μm Si Ge双极互补型金属氧化物半导体（Bi CMOS）工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹...采用0.13μm Si Ge双极互补型金属氧化物半导体（Bi CMOS）工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹配电路及输出匹配电路,提高了放大器的增益和工作带宽。采用非均匀功率管版图布局及镇流电阻,提升功率放大器电路可靠性。测试结果表明,在8-12 GHz频段内,放大器回波损耗均小于-10 d B,小信号增益大于30 d B,1 d B压缩点输出功率为16 d Bm,饱和功率大于19 d Bm,峰值饱和功率附加效率大于18%。该放大器工作在AB类,采用5 V供电,静态工作电流为80 m A,面积为1.22 mm×0.73 mm。展开更多
Designing logic circuits using complementary metal-oxide-semiconductor(CMOS)technology at the nano scale has been faced with various challenges recently.Undesirable leakage currents,the short-effect channel,and high e...Designing logic circuits using complementary metal-oxide-semiconductor(CMOS)technology at the nano scale has been faced with various challenges recently.Undesirable leakage currents,the short-effect channel,and high energy dissipation are some of the concerns.Quantum-dot cellular automata(QCA)represent an appropriate alternative for possible CMOS replacement in the future because it consumes an insignificant amount of energy compared to the standard CMOS.The key point of designing arithmetic circuits is based on the structure of a 1-bit full adder.A low-complexity full adder block is beneficial for developing various intricate structures.This paper represents scalable 1-bit QCA full adder structures based on cell interaction.Our proposed full adders encompass preference aspects of QCA design,such as a low number of cells used,low latency,and small area occupation.Also,the proposed structures have been expanded to larger circuits,including a 4-bit ripple carry adder(RCA),a 4-bit ripple borrow subtractor(RBS),an add/sub circuit,and a 2-bit array multiplier.All designs were simulated and verified using QCA Designer-E version 2.2.This tool can estimate the energy dissipation as well as evaluate the performance of the circuits.Simulation results showed that the proposed designs are efficient in complexity,area,latency,cost,and energy dissipation.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
文摘采用0.13μm Si Ge双极互补型金属氧化物半导体（Bi CMOS）工艺,设计了一款X波段功率放大器芯片。通过采用共射共基放大器电路结构和有源线性化偏置电路,提高了电路耐压值和功放最大输出功率。通过两级共射共基放大电路级联,结合级间匹配电路及输出匹配电路,提高了放大器的增益和工作带宽。采用非均匀功率管版图布局及镇流电阻,提升功率放大器电路可靠性。测试结果表明,在8-12 GHz频段内,放大器回波损耗均小于-10 d B,小信号增益大于30 d B,1 d B压缩点输出功率为16 d Bm,饱和功率大于19 d Bm,峰值饱和功率附加效率大于18%。该放大器工作在AB类,采用5 V供电,静态工作电流为80 m A,面积为1.22 mm×0.73 mm。
文摘Designing logic circuits using complementary metal-oxide-semiconductor(CMOS)technology at the nano scale has been faced with various challenges recently.Undesirable leakage currents,the short-effect channel,and high energy dissipation are some of the concerns.Quantum-dot cellular automata(QCA)represent an appropriate alternative for possible CMOS replacement in the future because it consumes an insignificant amount of energy compared to the standard CMOS.The key point of designing arithmetic circuits is based on the structure of a 1-bit full adder.A low-complexity full adder block is beneficial for developing various intricate structures.This paper represents scalable 1-bit QCA full adder structures based on cell interaction.Our proposed full adders encompass preference aspects of QCA design,such as a low number of cells used,low latency,and small area occupation.Also,the proposed structures have been expanded to larger circuits,including a 4-bit ripple carry adder(RCA),a 4-bit ripple borrow subtractor(RBS),an add/sub circuit,and a 2-bit array multiplier.All designs were simulated and verified using QCA Designer-E version 2.2.This tool can estimate the energy dissipation as well as evaluate the performance of the circuits.Simulation results showed that the proposed designs are efficient in complexity,area,latency,cost,and energy dissipation.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
