Let B<sub>α</sub>（α）be an additive function on a ring of integers in the quadratic number field Q（（1/2）d）given by B<sub>α</sub>（α）=∑<sub>p丨α</sub><sup>*</sup...Let B<sub>α</sub>（α）be an additive function on a ring of integers in the quadratic number field Q（（1/2）d）given by B<sub>α</sub>（α）=∑<sub>p丨α</sub><sup>*</sup>N<sup>α</sup>（p）with a fixed α】0,where the asterisk means that the summation is over the non-associate prime divisors p of an integer α in Q（（1/2）d）,N（α）is the norm of α.In this paper we obtain the asymptotic formula of ∑<sub>N</sub>（α）≤<sub>x</sub> <sup>*</sup>B<sub>α</sub>（α）in the case where the class-number of Q（（1/2）d）is one.展开更多
We have experimentally studied the Ni/n-Si nano Schottky barrier height （SBH） and potential difference between patches in the nano Schottky diodes （SD） using contact atomic force microscopy （C-AFM） in tapping mo...We have experimentally studied the Ni/n-Si nano Schottky barrier height （SBH） and potential difference between patches in the nano Schottky diodes （SD） using contact atomic force microscopy （C-AFM） in tapping mode and scanning tunneling microscopy （STM）. Topology measurement of the surface with C-AFM showed that, a single Ni/n-Si SD consists of many patches with different sizes. These patches are sets of parallel diodes and electrically interacting contacts of 5 to 50 nm sizes and between these individual diodes, there exists an additional electric field. In real metal semiconductor contacts （MSC）, patches with quite different configurations, various geometrical sizes and local work functions were randomly distributed on the surface of the metal. The direction and intensity of the additional electric field are distributed in homogenously along the contact metal surface. SBH controls the electronic transport across the MS interface and therefore, is of vital importance to the successful operation of semiconductor devices.展开更多
基金Project supported by the National Natural Science Foundation of China.
文摘Let B<sub>α</sub>（α）be an additive function on a ring of integers in the quadratic number field Q（（1/2）d）given by B<sub>α</sub>（α）=∑<sub>p丨α</sub><sup>*</sup>N<sup>α</sup>（p）with a fixed α】0,where the asterisk means that the summation is over the non-associate prime divisors p of an integer α in Q（（1/2）d）,N（α）is the norm of α.In this paper we obtain the asymptotic formula of ∑<sub>N</sub>（α）≤<sub>x</sub> <sup>*</sup>B<sub>α</sub>（α）in the case where the class-number of Q（（1/2）d）is one.
文摘We have experimentally studied the Ni/n-Si nano Schottky barrier height （SBH） and potential difference between patches in the nano Schottky diodes （SD） using contact atomic force microscopy （C-AFM） in tapping mode and scanning tunneling microscopy （STM）. Topology measurement of the surface with C-AFM showed that, a single Ni/n-Si SD consists of many patches with different sizes. These patches are sets of parallel diodes and electrically interacting contacts of 5 to 50 nm sizes and between these individual diodes, there exists an additional electric field. In real metal semiconductor contacts （MSC）, patches with quite different configurations, various geometrical sizes and local work functions were randomly distributed on the surface of the metal. The direction and intensity of the additional electric field are distributed in homogenously along the contact metal surface. SBH controls the electronic transport across the MS interface and therefore, is of vital importance to the successful operation of semiconductor devices.
