The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical model by the following governing nonlinear partial differential equations containing...The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical model by the following governing nonlinear partial differential equations containing velocity vector, temperature field, pressure field, and gas mass field. The mixed finite element （MFE） method is employed to study the system of equations for the vapor deposition chemical reaction processes. The semidiscrete and fully discrete MFE formulations are derived. And the existence and convergence （error estimate） of the semidiscrete and fully discrete MFE solutions are demonstrated. By employing MFE method to treat the system of equations for the vapor deposition chemical reaction processes, the numerical solutions of the velocity vector, the temperature field, the pressure field, and the gas mass field can be found out simultaneously. Thus, these researches are not only of important theoretical means, but also of extremely extensive applied vistas.展开更多
The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or...The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems.展开更多
Quasi-one-dimensional ZrS_(3)nanoflakes attract intense interest attributed to their superior electrical and optical anisotropy,stemming from the low symmetry in the crystal structure.However,the conventional chemical...Quasi-one-dimensional ZrS_(3)nanoflakes attract intense interest attributed to their superior electrical and optical anisotropy,stemming from the low symmetry in the crystal structure.However,the conventional chemical vapor transport method for synthesizing bulk ZrS_(3)is limited by morphology and size controllability.It is highly desirable to propose a facile way to precisely synthesize ZrS_(3)nanoflakes.In this work,the chemical vapor deposition method is proposed as a feasible way to synthesize ZrS_(3)nanoflakes.The effects of various substrates and temperatures on ZrS_(3)synthesis have been investigated.For the as-grown ZrS_(3),good crystallinity is confirmed with X-ray diffraction and transmission electron microscopy.The structure and interlayer coupling are investigated with Raman scattering spectroscopy.The strong in-plane anisotropy and interlayer coupling of the ZrS_(3)nanoflakes are illustrated with angle-resolved Raman spectroscopy and temperature-dependent Raman characterization,respectively.This study demonstrates a feasible way for the synthesis of transition metal trisulfides,which may shed new light on the research of other two-dimensional anisotropic transition metal materials.展开更多
Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon c...Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min.展开更多
We demonstrate a simple and controllable way to synthesize large-area, few-layer graphene on iron substrates by an optimized chemical vapor deposition （CVD） method using a mixture of methane and hydrogen. Based on a...We demonstrate a simple and controllable way to synthesize large-area, few-layer graphene on iron substrates by an optimized chemical vapor deposition （CVD） method using a mixture of methane and hydrogen. Based on an analysis of the Fe-C phase diagram, a suitable procedure for the successful synthesis of graphene on Fe surfaces was designed. An appropriate temperature and cooling process were found to be very important in the synthesis of highly crystalline few-layer graphene. Graphene-based field-effect transistor （FET） devices were fabricated using the resulting few-layer graphene, and showed good quality with extracted mobilities of 300-1150 cm2/（V.s）.展开更多
The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition technique.It was demonstrated that various structures of tin oxide can be obtained by controlling the thickness...The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition technique.It was demonstrated that various structures of tin oxide can be obtained by controlling the thickness of gold layer and the partial pressure of source vapor at growing sites.12.5 and 25 nm thicknesses are preferable for the epitaxial growth of nanowires and heterostructure through vapor–liquid–solid mechanism,respectively.The tin dioxide whiskers with core-shell structure were fabricated by vapor–solid mechanism.Meanwhile,the influences of various factors on the tin dioxide growth are also discussed.展开更多
The optical emission spectra （atomic hydrogen （Hα, Hβ, Hγ）, atomic carbon C （2p3s → 2p^2： A = 165.7 nm） and radical CH （A^2△ →X^2П：λ = 420 - 440 nm）） in the gas phase process of the diamond film grow...The optical emission spectra （atomic hydrogen （Hα, Hβ, Hγ）, atomic carbon C （2p3s → 2p^2： A = 165.7 nm） and radical CH （A^2△ →X^2П：λ = 420 - 440 nm）） in the gas phase process of the diamond film growth from a gas mixture of CH4 and H2 by the technology of electron-assisted chemical vapor deposition （EACVD） have been investigated by using Monte Carlo simulation. The results show that the growth rate may be enhanced by the substrate bias due to the increase of atomic hydrogen concentration and the mean temperature of electrons. And a method of determining the mean temperature of electrons in the plasma in-situ is given. The strong dependence on substrate temperature of the quality of diamond film mainly attributes to the change of zas ohase orocess near the substrate surface.展开更多
In this study, the temperature and gas velocity distributions in hot filament chemical vapor deposition(HFCVD) diamond film growth on the end surfaces of seals are simulated by the finite volume method. The influence ...In this study, the temperature and gas velocity distributions in hot filament chemical vapor deposition(HFCVD) diamond film growth on the end surfaces of seals are simulated by the finite volume method. The influence of filament diameter, filament separation and rotational speed of the substrates is considered. Firstly,the simulation model is established by simplifying operating conditions to simulate the temperature and gas velocity distributions. Thereafter, the deposition parameters are optimized as 0.6 mm filament diameter, 18 mm filament separation and 5 r/min rotational speed to get the uniform temperature distribution. Under the influence of the rotational speed, the difference between temperature gradients along the directions perpendicular to the filament and parallel to the filament becomes narrow, it is consistent with the actual condition, and the maximum temperature difference on the substrates decreases to 7.4?C. Furthermore, the effect of the rotational speed on the gas velocity distribution is studied. Finally, diamond films are deposited on the end surfaces of Si C seals with the optimized deposition parameters. The characterizations by scanning electron microscopy(SEM) and Raman spectroscopy exhibit a layer of homogeneous diamond films with fine-faceted crystals and uniform thickness. The results validate the simulation model.展开更多
Chemical vapor deposition has emerged as the most promising technique for the growth of graphene.However, most reports of this technique use either flammable or explosive gases, which bring safety concerns and extra c...Chemical vapor deposition has emerged as the most promising technique for the growth of graphene.However, most reports of this technique use either flammable or explosive gases, which bring safety concerns and extra costs to manage risk factors. In this article, we demonstrate that continuous monolayer graphene can be synthesized via chemical vapor deposition technique on Cu foils using industrially safe gas mixtures. Important factors, including the appropriate ratio of hydrogen flow and carbon precursor,pressure, and growth time are considered to obtain graphene films. Optical measurements and electrical transport measurements indicate graphene films are with comparable quality to other reports. Such continuous large area graphene can be synthesized under non-flammable and non-explosive conditions, which opens a safe and economical method for mass production of graphene. It is thereby beneficial for integration of graphene into semiconductor electronics.展开更多
Economical water electrolysis requires highly active non-noble electrocatalysts to overcome the sluggish kinetics of the two half-cell reactions,oxygen evolution reaction,and hydrogen evolution reaction.Although inten...Economical water electrolysis requires highly active non-noble electrocatalysts to overcome the sluggish kinetics of the two half-cell reactions,oxygen evolution reaction,and hydrogen evolution reaction.Although intensive efforts have been committed to achieve a hydrogen economy,the expensive noble metal-based catalysts remain under consideration.Therefore,the engineering of self-supported electrocatalysts prepared using a direct growth strategy on three-dimensional(3D)nickel foam(NF)as a conductive substrate has garnered significant interest.This is due to the large active surface area and 3D porous network offered by these electrocatalysts,which can enhance the synergistic eff ect between the catalyst and the substrate,as well as improve electrocatalytic performance.Hydrothermal-assisted growth,microwave heating,electrodeposition,and other physical methods(i.e.,chemical vapor deposition and plasma treatment)have been applied to NF to fabricate competitive electrocatalysts with low overpotential and high stability.In this review,recent advancements in the development of self-supported electrocatalysts on 3D NF are described.Finally,we provide future perspectives of self-supported electrode platforms in electrochemical water splitting.展开更多
Anisotropic materials, like carbon nanotubes(CNTs), are the perfect substitutes to overcome the limitations of conventional metamaterials; however, the successful fabrication of CNT forest metamaterial structures is s...Anisotropic materials, like carbon nanotubes(CNTs), are the perfect substitutes to overcome the limitations of conventional metamaterials; however, the successful fabrication of CNT forest metamaterial structures is still very challenging. In this study, a new method utilizing a focused ion beam(FIB) with additional secondary etching is presented, which can obtain uniform and fine patterning of CNT forest nanostructures for metamaterials and ranging in sizes from hundreds of nanometers to several micrometers. The influence of the FIB processing parameters on the morphology of the catalyst surface and the growth of the CNT forest was investigated, including the removal of redeposited material,decreasing the average surface roughness(from 0.45 to 0.15 nm), and a decrease in the thickness of the Fe catalyst.The results showed that the combination of FIB patterning and secondary etching enabled the growth of highly aligned, highdensity CNT forest metamaterials. The improvement in the quality of single-walled CNTs(SWNTs), defined by the very high G/D peak ratio intensity of 10.47, demonstrated successful fine patterning of CNT forest for the first time. With a FIB patterning depth of 10 nm and a secondary etching of 0.5 nm, a minimum size of 150 nm of CNT forest metamaterials was achieved. The development of the FIB secondary etching method enabled for the first time, the fabrication of SWNT forest metamaterials for the optical and infrared regime, for future applications, e.g., in superlenses, antennas,or thermal metamaterials.展开更多
基金Project supported by the National Natural Science Foundation of China (Nos.10471100 and 40437017)the Science and Technology Foundation of Beijing Jiaotong University
文摘The vapor deposition chemical reaction processes, which are of extremely extensive applications, can be classified as a mathematical model by the following governing nonlinear partial differential equations containing velocity vector, temperature field, pressure field, and gas mass field. The mixed finite element （MFE） method is employed to study the system of equations for the vapor deposition chemical reaction processes. The semidiscrete and fully discrete MFE formulations are derived. And the existence and convergence （error estimate） of the semidiscrete and fully discrete MFE solutions are demonstrated. By employing MFE method to treat the system of equations for the vapor deposition chemical reaction processes, the numerical solutions of the velocity vector, the temperature field, the pressure field, and the gas mass field can be found out simultaneously. Thus, these researches are not only of important theoretical means, but also of extremely extensive applied vistas.
基金the National Key R&D Program of China(Grants No.2017YFB0703200)National Natural Science Foundation of China(Grants Nos.51702100,51972268)China Postdoctoral Science Foundation(Grants No.2018M643075)for financial support。
文摘The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems.
基金S.L.acknowledges the financial support from the National Natural Science Foundation of China(Nos.22175060 and 21975067)the Natural Science Foundation of Hunan Province of China(Nos.2021JJ10014 and 2021JJ30092)。
文摘Quasi-one-dimensional ZrS_(3)nanoflakes attract intense interest attributed to their superior electrical and optical anisotropy,stemming from the low symmetry in the crystal structure.However,the conventional chemical vapor transport method for synthesizing bulk ZrS_(3)is limited by morphology and size controllability.It is highly desirable to propose a facile way to precisely synthesize ZrS_(3)nanoflakes.In this work,the chemical vapor deposition method is proposed as a feasible way to synthesize ZrS_(3)nanoflakes.The effects of various substrates and temperatures on ZrS_(3)synthesis have been investigated.For the as-grown ZrS_(3),good crystallinity is confirmed with X-ray diffraction and transmission electron microscopy.The structure and interlayer coupling are investigated with Raman scattering spectroscopy.The strong in-plane anisotropy and interlayer coupling of the ZrS_(3)nanoflakes are illustrated with angle-resolved Raman spectroscopy and temperature-dependent Raman characterization,respectively.This study demonstrates a feasible way for the synthesis of transition metal trisulfides,which may shed new light on the research of other two-dimensional anisotropic transition metal materials.
基金Projects(51275302,51005154)supported by the National Natural Science Foundation of China
文摘Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min.
文摘We demonstrate a simple and controllable way to synthesize large-area, few-layer graphene on iron substrates by an optimized chemical vapor deposition （CVD） method using a mixture of methane and hydrogen. Based on an analysis of the Fe-C phase diagram, a suitable procedure for the successful synthesis of graphene on Fe surfaces was designed. An appropriate temperature and cooling process were found to be very important in the synthesis of highly crystalline few-layer graphene. Graphene-based field-effect transistor （FET） devices were fabricated using the resulting few-layer graphene, and showed good quality with extracted mobilities of 300-1150 cm2/（V.s）.
基金supported by Deakin University under a postgraduate research scholarship,the Fundamental Scientific Research Funds for Chinese Academy of Tropical Agricultural Sciences (Nos.1630022011033 and 1630062013011)the Natural Science Foundation of Hainan Province,China (No.20155197)
文摘The nanowire and whisker heterostructures of tin dioxide were fabricated by the chemical vapor deposition technique.It was demonstrated that various structures of tin oxide can be obtained by controlling the thickness of gold layer and the partial pressure of source vapor at growing sites.12.5 and 25 nm thicknesses are preferable for the epitaxial growth of nanowires and heterostructure through vapor–liquid–solid mechanism,respectively.The tin dioxide whiskers with core-shell structure were fabricated by vapor–solid mechanism.Meanwhile,the influences of various factors on the tin dioxide growth are also discussed.
基金the National Natural Science Foundation of China(No.10647123)the Youth Natural Science Foundation of Hebei University(No.2005Q31)
文摘The optical emission spectra （atomic hydrogen （Hα, Hβ, Hγ）, atomic carbon C （2p3s → 2p^2： A = 165.7 nm） and radical CH （A^2△ →X^2П：λ = 420 - 440 nm）） in the gas phase process of the diamond film growth from a gas mixture of CH4 and H2 by the technology of electron-assisted chemical vapor deposition （EACVD） have been investigated by using Monte Carlo simulation. The results show that the growth rate may be enhanced by the substrate bias due to the increase of atomic hydrogen concentration and the mean temperature of electrons. And a method of determining the mean temperature of electrons in the plasma in-situ is given. The strong dependence on substrate temperature of the quality of diamond film mainly attributes to the change of zas ohase orocess near the substrate surface.
基金the Important National Science and Technology Specific Projects(No.2012ZX04003-031)
文摘In this study, the temperature and gas velocity distributions in hot filament chemical vapor deposition(HFCVD) diamond film growth on the end surfaces of seals are simulated by the finite volume method. The influence of filament diameter, filament separation and rotational speed of the substrates is considered. Firstly,the simulation model is established by simplifying operating conditions to simulate the temperature and gas velocity distributions. Thereafter, the deposition parameters are optimized as 0.6 mm filament diameter, 18 mm filament separation and 5 r/min rotational speed to get the uniform temperature distribution. Under the influence of the rotational speed, the difference between temperature gradients along the directions perpendicular to the filament and parallel to the filament becomes narrow, it is consistent with the actual condition, and the maximum temperature difference on the substrates decreases to 7.4?C. Furthermore, the effect of the rotational speed on the gas velocity distribution is studied. Finally, diamond films are deposited on the end surfaces of Si C seals with the optimized deposition parameters. The characterizations by scanning electron microscopy(SEM) and Raman spectroscopy exhibit a layer of homogeneous diamond films with fine-faceted crystals and uniform thickness. The results validate the simulation model.
基金National Natural Science Foundation of China(No.52161040)Major Science and Technology Research and Development Project of Jiangxi Province(No.20203ABC28W006)+1 种基金Natural Science Foundation of Jiangxi Province,China,(No.20202ACBL214011)Key Project of"Science and Technology to Promote Mongolian Development",China(No.XM2021BT03)。
文摘Chemical vapor deposition has emerged as the most promising technique for the growth of graphene.However, most reports of this technique use either flammable or explosive gases, which bring safety concerns and extra costs to manage risk factors. In this article, we demonstrate that continuous monolayer graphene can be synthesized via chemical vapor deposition technique on Cu foils using industrially safe gas mixtures. Important factors, including the appropriate ratio of hydrogen flow and carbon precursor,pressure, and growth time are considered to obtain graphene films. Optical measurements and electrical transport measurements indicate graphene films are with comparable quality to other reports. Such continuous large area graphene can be synthesized under non-flammable and non-explosive conditions, which opens a safe and economical method for mass production of graphene. It is thereby beneficial for integration of graphene into semiconductor electronics.
基金supported by The Chinese Academy of Sciences (CAS) President’s International Fellowship Initiative (No. 2023VCB0014)The National Natural Science Foundation of China (No. 52203284)Shenzhen Science and Technology Program (Nos. GJHZ20220913143801003 and RCBS20221008093057026)
文摘Economical water electrolysis requires highly active non-noble electrocatalysts to overcome the sluggish kinetics of the two half-cell reactions,oxygen evolution reaction,and hydrogen evolution reaction.Although intensive efforts have been committed to achieve a hydrogen economy,the expensive noble metal-based catalysts remain under consideration.Therefore,the engineering of self-supported electrocatalysts prepared using a direct growth strategy on three-dimensional(3D)nickel foam(NF)as a conductive substrate has garnered significant interest.This is due to the large active surface area and 3D porous network offered by these electrocatalysts,which can enhance the synergistic eff ect between the catalyst and the substrate,as well as improve electrocatalytic performance.Hydrothermal-assisted growth,microwave heating,electrodeposition,and other physical methods(i.e.,chemical vapor deposition and plasma treatment)have been applied to NF to fabricate competitive electrocatalysts with low overpotential and high stability.In this review,recent advancements in the development of self-supported electrocatalysts on 3D NF are described.Finally,we provide future perspectives of self-supported electrode platforms in electrochemical water splitting.
文摘Anisotropic materials, like carbon nanotubes(CNTs), are the perfect substitutes to overcome the limitations of conventional metamaterials; however, the successful fabrication of CNT forest metamaterial structures is still very challenging. In this study, a new method utilizing a focused ion beam(FIB) with additional secondary etching is presented, which can obtain uniform and fine patterning of CNT forest nanostructures for metamaterials and ranging in sizes from hundreds of nanometers to several micrometers. The influence of the FIB processing parameters on the morphology of the catalyst surface and the growth of the CNT forest was investigated, including the removal of redeposited material,decreasing the average surface roughness(from 0.45 to 0.15 nm), and a decrease in the thickness of the Fe catalyst.The results showed that the combination of FIB patterning and secondary etching enabled the growth of highly aligned, highdensity CNT forest metamaterials. The improvement in the quality of single-walled CNTs(SWNTs), defined by the very high G/D peak ratio intensity of 10.47, demonstrated successful fine patterning of CNT forest for the first time. With a FIB patterning depth of 10 nm and a secondary etching of 0.5 nm, a minimum size of 150 nm of CNT forest metamaterials was achieved. The development of the FIB secondary etching method enabled for the first time, the fabrication of SWNT forest metamaterials for the optical and infrared regime, for future applications, e.g., in superlenses, antennas,or thermal metamaterials.
