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Discussion on design for alkaline cleaning system of continual annealing line
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作者 HE Daohong,YI Fan and LU Zhiyi Baosteel Engineering & Technology Group Co.,Ltd.,Shanghai 201900 《Baosteel Technical Research》 CAS 2010年第S1期117-,共1页
Conventional process flow and main work mechanism of alkaline cleaning process of Continual Annealing Line are generally reviewed in the paper,and the work flow of design is analysed including the lye,rinse water circ... Conventional process flow and main work mechanism of alkaline cleaning process of Continual Annealing Line are generally reviewed in the paper,and the work flow of design is analysed including the lye,rinse water circuit,conductivity detection circuit,utility media supply circuit and other main working circuits.Meanwhile,the heat demand of the alkaline cleaning system,rinse water system and dryer device are also analysed.Lumped parameter method in the heat-transfer theory is adopted to calculate the heating time of unsteady heat transfer for strips in the on-line tank.And the reasons why brush roller is of inverse brush and rinsing nozzles are equipped at the inlet side are found.Types and working principles of iron removal and degreasing devices for alkaline cleaning system,which adopt new magnetic filtration and ultra filtration processes,are described.Besides,the bypass filtering method is used to calculate the processing capacity of magnetic filtration and ultra filtration devices.Finally,the related features of 3-Dimension software "PlantSpace" for designing a CAL in Baosteel are totally introduced,such as specification for piping,co-designing,pipe code and 3-Dimension design process. 展开更多
关键词 alkaline cleaning heating time magnetic filtration ultra filtration 3-Dimension design
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Synergetic effect of chelating agent and nonionic surfactant for benzotriazole removal on post Cu-CMP cleaning 被引量:1
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作者 李彦磊 刘玉岭 +1 位作者 王辰伟 李月 《Journal of Semiconductors》 EI CAS CSCD 2016年第8期97-102,共6页
The cleaning of copper interconnects after chemical mechanical planarization (CMP) process is a crit- ical step in integrated circuits (ICs) fabrication. Benzotriazole (BTA), which is used as corrosion inhibitor... The cleaning of copper interconnects after chemical mechanical planarization (CMP) process is a crit- ical step in integrated circuits (ICs) fabrication. Benzotriazole (BTA), which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy (SEM) review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance. 展开更多
关键词 post Cu-CMP alkaline cleaning solution BTA removal chelating agent nonionic surfactant
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