All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. T...All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.展开更多
基金This work was supported by the National Basic Research Program of China （973 Program） （Nos. 2013CB934500 and 2013CBA01600）, the National Natural Science Foundation of China （NSFC） （Nos. 61325021, 91223204, 11174333 and 11204358）, and the Chinese Academy of Sciences.
文摘All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.
