Ga2O3/ITO alternating multilayer films were deposited on quartz glass substrates by rnagnetron sputtering. The effect of the multi-period on the structural, optical and electrical properties of Ga2O3/ITO alternating m...Ga2O3/ITO alternating multilayer films were deposited on quartz glass substrates by rnagnetron sputtering. The effect of the multi-period on the structural, optical and electrical properties of Ga2O3/ITO alternating multilayer films was investigated by an X-ray diffractometer, a double beam spectrophotometer and the Hall system, respectively. A low sheet resistance of 225.5 Ω/□ and a high transmittance of more than 62.9% at a 300 nm wavelength were obtained for the two-period alternating multilayer film with a thickness of 72 nm.展开更多
基金supported by the National Natural Science Foundation of China(No.10974077)the National Science Foundation of Shandong Province,China(No.2009ZRB01702)the Shandong Province Higher Educational Science and Technology Program,China(No.J10LA08)
文摘Ga2O3/ITO alternating multilayer films were deposited on quartz glass substrates by rnagnetron sputtering. The effect of the multi-period on the structural, optical and electrical properties of Ga2O3/ITO alternating multilayer films was investigated by an X-ray diffractometer, a double beam spectrophotometer and the Hall system, respectively. A low sheet resistance of 225.5 Ω/□ and a high transmittance of more than 62.9% at a 300 nm wavelength were obtained for the two-period alternating multilayer film with a thickness of 72 nm.
