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Hot carrier injection degradation under dynamic stress
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作者 马晓华 曹艳荣 +1 位作者 郝跃 张月 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第3期402-406,共5页
In this paper, we have studied hot carrier injection (HCI) different degradations are obtained from the experiment results. under alternant stress. Under different stress modes, The different alternate stresses can ... In this paper, we have studied hot carrier injection (HCI) different degradations are obtained from the experiment results. under alternant stress. Under different stress modes, The different alternate stresses can reduce or enhance the HC effect, which mainly depends on the latter condition of the stress cycle. In the stress mode A (DC stress with electron injection), the degradation keeps increasing. In the stress modes B (DC stress and then stress with the smMlest gate injection) and C (DC stress and then stress with hole injection under Vg = 0 V and Vd = 1.8 V), recovery appears in the second stress period. And in the stress mode D (DC stress and then stress with hole injection under Vg = -1.8 V and Vd = 1.8 V), as the traps filled in by holes can be smaller or greater than the generated interface states, the continued degradation or recovery in different stress periods can be obtained. 展开更多
关键词 hot carrier injection alternate stress RECOVERY DEGRADATION
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Influence of shrinkage porosity on fatigue performance of iron castings and life estimation method 被引量:3
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作者 Wei Liu Wei-hao Zhai Jun-feng Zhao 《China Foundry》 SCIE 2016年第1期47-53,共7页
Shrinkage porosity exists more or less in heavy castings, and it plays an important role in the fatigue behavior of cast materials. In this study, fatigue tests were carried out on the QT400-18 cast iron specimens con... Shrinkage porosity exists more or less in heavy castings, and it plays an important role in the fatigue behavior of cast materials. In this study, fatigue tests were carried out on the QT400-18 cast iron specimens containing random degrees of shrinkage porosity defect. Experimental results showed that the order of magnitude of life scattered from 103 to 106 cycles when the shrinkage percentage ranged from 0.67% to 5.91%. SEM analyses were carried out on the shrinkage porosity region. The inter-granular discontinuous, micro cracks and inclusions interfered with the fatigue sliding or hindering process. The slip in shrinkage porosity region was not as orderly as the ordinary continuous medium. The shrinkage porosity area on fracture surface(SPAFS) and alternating stress intensity factor(ASIF) were applied to evaluate the tendency of residual life distribution; their relationship was fitted by negative exponent functions. Based on the intermediate variable of ASIF, a fatigue life prediction model of nodular cast iron containing shrinkage porosity defects was established. The modeling prediction was in agreement with the experimental results. 展开更多
关键词 shrinkage porosity iron castings fatigue life alternating stress intensity factor equivalent initial crack
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THERMAL FRACTURE OF FUNCTIONALLY GRADED PLATE WITH PARALLEL SURFACE CRACKS 被引量:1
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作者 Yuezhong Feng Zhihe Jin 《Acta Mechanica Solida Sinica》 SCIE EI 2009年第5期453-464,共12页
This work examines the fracture behavior of a functionally graded material (FGM) plate containing parallel surface cracks with alternating lengths subjected to a thermal shock. The thermal stress intensity factors ... This work examines the fracture behavior of a functionally graded material (FGM) plate containing parallel surface cracks with alternating lengths subjected to a thermal shock. The thermal stress intensity factors (TSIFs) at the tips of long and short cracks are calculated using a singular integral equation technique. The critical thermal shock △Tc that causes crack initiation is calculated using a stress intensity factor criterion. Numerical examples of TSIFs and △Tc for an Al2O3/Si3N4 FGM plate are presented to illustrate the effects of thermal property gradation, crack spacing and crack length ratio on the TSIFs and △Tc. It is found that for a given crack length ratio, the TSIFs at the tips of both long and short cracks can be reduced significantly and △Tc can be enhanced by introducing appropriate material gradation. The TSIFs also decrease dramatically with a decrease in crack spacing. The TSIF at the tips of short cracks may be higher than that for the long cracks under certain crack geometry conditions. Hence, the short cracks instead of long cracks may first start to grow under the thermal shock loading. 展开更多
关键词 functionally graded material thermal fracture parallel cracks alternating lengths stress intensity factor
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On the Relationship of the Discrete Model of the Nuclei of Linear and Planar Defects and the Continuum Models of Defects in Crystalline Materials 被引量:2
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作者 V. L. Busov 《Applied Mathematics》 2020年第9期862-875,共14页
A physical and mathematical model of the transition from a discrete model of linear and flat defects nuclei to continuum models of defects such as dislocations and disclinations and their combinations is presented, wh... A physical and mathematical model of the transition from a discrete model of linear and flat defects nuclei to continuum models of defects such as dislocations and disclinations and their combinations is presented, where the tensors of energy-momentum and angular momentum of an alternating field are considered, for which the type and structure of the Maxwell stress tensor <span><i>σ</i></span><sup><i>if</i></sup><sub style="margin-left:-15px;"> <i>αβ</i></sub> are given and the corresponding angular momentum tensor, using the dynamic equation for the evolution of internal stresses and the correlation between the stresses <span><i>σ</i></span><sup><i>if</i></sup><sub style="margin-left:-15px;"> <i>αβ</i></sub> in the defect core and the elastic stresses <span><i>σ</i></span><sup><i>el</i></sup><sub style="margin-left:-9px;"><i>ik</i></sub> in its environment, obtains elastic displacement and deformation fields identical to these fields from Burgers and Frank vectors of continuous models. The spectral density of the autocorrelation functions of the velocity of photoelectrons <span>Ψ</span><sup><i>β</i></sup><sub style="margin-left:-6px;">⊥</sub>(<i>β</i>) and cations <img src="Edit_e2d8e074-eb94-44dc-8ab6-6644bbf74f9c.bmp" alt="" /> , which transforms into linear spectra as <i>T</i> → 0, is considered reflecting the existence of threshold values of oscillation and rotations currents of photoelectrons and cations at all stages of plastic deformation and fracture. The features of the process of sliding linear defects in metals are disclosed. 展开更多
关键词 Maxwell stress Tensor of an alternating (Intermittent) Field Equation of Evolution of Internal stresses Autocorrelation Function of the Speed of Photoelectrons and Cations
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Degradation of the transconductance of a gate-modulated generation current in nMOSFET
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作者 陈海峰 过立新 杜慧敏 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第8期564-569,共6页
The degradation of transconductance (G) of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped elect... The degradation of transconductance (G) of a gate-modulated generation current IGD in a LDD nMOSFET is investigated. The G curve shifts rightward under the single electron-injection-stress (EIS). The trapped electrons located in the gate oxide over the LDD region (QL) makes the effective drain voltage diminish. Accordingly, the G peak in depletion (GMD) and that in weak inversion (GMw) decrease. It is found that △GMD and △GMw each have a linear relationship with the n-th power of stress time (tn) in a dual-log coordinate: △GMD octn, AGMD octn (n = 0.25). During the alternate stress, the injected holes neutralize QL induced by the previous EIS. This neutralization makes the effective VD restore to the initial value and then the IGD peak recovers completely. Yet the threshold voltage recovery is incomplete due to the trapped electron located over the channel (Qc). As a result, GMW only recovers to circa 50% of the initial value after the hole-injection-stress (HIS). Instead, GMD almost recovers. The relevant mechanisms are given in detail. 展开更多
关键词 generation current TRANSCONDUCTANCE electron injection alternate stress DEGRADATION
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