Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

Current diffusion and efficiency droop in vertical light emitting diodes

Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes(LEDs) needs to be further quantitatively clarified. By incorporating current crowding effect(CCE) into the conventional ABC model, we have theoretically and directly correlated the current diffusion and the internal quantum efficiency(IQE), light extraction efficiency(LEE), and external quantum efficiency(EQE) droop of the lateral LEDs.However, questions still exist for the vertical LEDs(V-LEDs). Here firstly the current diffusion length L_s(I) and L_s(II) have been clarified. Based on this, the influence of CCE on the EQE, IQE, and LEE of V-LEDs were investigated. Specifically to our V-LEDs with moderate series resistivity, L_s(III) was developed by combining L_s(I) and L_s(II), and the CCE effect on the performance of V-LEDs was investigated. The wall-plug efficiency(WPE) of V-LEDs ware investigated finally. Our works provide a deep understanding of the current diffusion status and the correlated efficiency droop in V-LEDs, thus would benefit the V-LEDs' chip design and further efficiency improvement.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au （5 nm/5 nm） film deposition. The surface morphology of wafers and the current voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes.

Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting diodes on the dye species and current density

This paper utilizes multilayer organic light-emitting diodes with a thin layer of dye molecules to study the mech- anism of charge trapping under different electric regimes. It demonstrates that the carrier trapping was independent of the current density in devices using fluorescent material as the emitting molecule while this process was exactly opposite when phosphorescent material was used. The triplet-triplet annihilation and dissociation of excitons into free charge carriers was considered to contribute to the decrease in phosphorescent emission under high electric fields. Moreover, the fluorescent dye molecule with a lower energy gap and ionized potential than the host emitter was observed to facilitate the carrier trapping mechanism, and it would produce photon emission.

Improved light extraction of organic light emitting diodes with a nanopillar pattering structure

We have investigated the properties of organic light emitting diodes （OLEDs） with a nanopillar patterning structure at organic-metal or organic-organic interfaces. The results demonstrate that the introduction of a nanopillar structure can improve the light extraction efficiency greatly. We also find that the number, height, and position of nanopillars all affect the light extraction of OLEDs. The maximum power efficiency of a device with an optimized nanopillar patterning mode can be improved to 2.47 times that of the reference device. This enhancement in light extraction originates from the improved injected carriers, the broadened charge recombination zone, and the intensified wave guiding effects.

Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires

Silver nanowire（AgNW） networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide（ITO） and have been proposed to replace ITO, which is currently widely used in optoelectronic devices despite the scarcity of indium on Earth. In this paper, the current spreading and enhanced transmittance induced by AgNWs, which are two important factors influencing the light output power, were analyzed. The enhanced transmittance was studied by finite-difference time-domain simulation and verified by cathodoluminescence measurements.The enhancement ratio of the light output power decreased as the Ga P layer thickness increased, with enhancement ratio values of 79%, 52%, and 15% for Ga P layer thicknesses of 0.5 μm, 1 μm, and 8 μm, respectively, when an AgNW network was included in Al Ga In P light-emitting diodes. This was because of the decreased current distribution tunability of the AgNW network with the increase of the Ga P layer thickness. The large enhancement of the light output power was caused by the AgNWs increasing carrier spread out of the electrode and the enhanced transmittance induced by the plasmonic AgNWs. Further decreasing the sheet resistance of AgNW networks could raise their light output power enhancement ratio.

Transient and stable electroluminescence properties of alternating-current biased organic light-emitting diodes

In this work, transient electroluminescence （EL） （brightness-voltage waveform curve） was utilized to investigate the working mechanism of alternating-current biased organic light-emitting diodes （AC-OLEDs）. In lower frequency domain, injection potential barrier was the dominant effect to determine the luminescence intensity; with increased frequency, the influence of capacitance effect becomes dominant, which can be confirmed according to the investigations on stable EL of the AC-OLEDs. The results indicate that transient and stable EL can agree with each other perfectly. Besides, the stable EL reveals that the thinner device can take more effective capacitance effect.

Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer

The light output power of an InGaN/GaN light-emitting diode is improved by using a SiO2/TiO2 distributed Bragg reflector （DBR） and an A1 mirror as a hybrid reflective current blocking layer （CBL）. Such a hybrid reflective CBL not only plays the role of the CBL by enhancing current spreading but also plays the role of a reflector by preventing photons near the p electrode pad from being absorbed by a metal electrode. At a wavelength of 455 nm, a 1.5-pair of SiO2/TiO2 DBR and an A1 mirror （i.e. 1.5-pair DBR＋A1） deposited on a p-GaN layer showed a normal-incidence reflectivity as high as 97.8%. With 20 mA current injection, it was found that the output power was 25.26, 24.45, 23.58 and 22.45 mW for the LED with a 1.5-pair DBR＋AI CBL, a 3-pair DBR CBL, SiO2 CBL and without a CBL, respectively.

Current-voltage characteristics of light-emitting diodes under optical and electrical excitation

The factors influencing the current-voltage（I-V） characteristics of light-emitting diodes（LEDs） are investigated to reveal the connection of I-V characteristics under optical excitation and those under electrical excitation.By inspecting the I-V curves under optical and electrical excitation at identical injection current,it has been found that the I-V curves exhibit apparent differences in voltage values.Furthermore,the differences are found to originate from the junction temperatures in diverse excitation ways.Experimental results indicate that if the thermal effect of illuminating spot is depressed to an ignorable extent by using pulsed light,the junction temperature will hardly deflect from that under optical excitation,and then the I-V characteristics under two diverse excitation ways will be the same.

Efficient Supply Current Control Strategies for Bridgeless Interleaved AC-DC Converter

This paper presents an efficient supply current wave shaping technique for bridgeless interleaved Single Ended Primary Inductor Converter(SEPIC).The SEPIC converter converts an Alternating Current(AC)to Direct Current(DC)with the boost converter.Power Factor Correction(PFC)is progressively significant to achieve high energy efficiency.The overall system efficiency can be increased as the bridgeless topology has less conduction losses from rectifying bridges.Also,the bridgeless and interleaved techniques are incorporated in this study to achieve better performance.The performance of the system is analyzed on both current control and sensor-less techniques.Different controllers such as Proportional Integral(PI)control,peak current control,Non-Linear Carrier(NLC)control,and sensor-less current control are integrated.All the above controllers are implemented using MATrix LABoratory(MATLAB)/SIMULINK.The performance parameter,namely Power Factor(PF),Total Harmonic Distortion(THD),is computed for both open loop and closed loop condition.The sensor-less current control method is implemented using the DsPIC30F2010 controller.The circuit performance is also verified from the simulation and hardware results.The proposed controller has inbuilt Analog-to-Digital Converter(ADC),Digital-to-Analog Converter(DAC),Pulse Width Modulation(PWM)generator,and provides fast responses.

位移电流测试方法的改进及应用

自从麦克斯韦第一次提出位移电流这一概念之后,其在薄膜表征中便得到广泛的应用。然而,在课堂教学中,极少涉及位移电流的测试原理及相关应用讲解,更缺少对其实际应用的介绍。本文从位移电流的测试原理出发,联系实际应用,提出了基于周期性阶跃电压驱动的电流测量(CPSIV)的新方法。这将有效地加深学生对于位移电流物理本质的深入理解。同时,我们以量子点发光二极管(QLED)为平台,对这一新的测试方案进行了实验验证。针对其中空穴传输层薄膜的缺陷特性及其对器件性能的影响进行了表征,揭示了器件的发光开启机制,证实了我们方案的可靠性。

高增益和多路输出均衡的高效LED驱动拓扑研究

驱动多路并联的发光二极管LED(light-emittingdiode)容易导致各路电流不平衡,为了实现各路LED之间的均流并提高电路效率,提出1种具有多路输出能力的高效率LED驱动电源。采用Boost级联串联谐振变换器的结构实现各路LED之间的均流,并获得较高的电压增益;变压器的漏感抑制了开关管导通时的电流上升速度,实现了开关管的ZCS导通;增加了1个无损缓冲电路减缓开关管关断时的电压上升速度,极大地降低了开关损耗;将变压器的励磁电感设计得足够大,使变压器的损耗降低;在实现软开关的同时,仅需1个开关管,从而降低了电路成本并简化了控制。因此,所提方案在实现均流的同时还能够实现较高的效率和电压增益,且成本较低。详细分析了所提方案电路的工作原理和工作特性,并给出了参数设计的具体流程。最后,搭建了1台输入电压为12 V、两路输出功率为7.9 W的样机,证明了所提方案的可行性。

基于无源均流的谐振式无桥型Boost LED驱动电源

传统Boost功率因数校正变换器的输出电压必须大于输入电压,在一定程度上限制了其在LED驱动电源中的应用。同时,传统LED驱动电源因输入端整流桥的存在而限制了自身效率的进一步提升。基于谐振式Boost功率因数校正变换器拓扑提出了一种无源均流型无桥Boost LED驱动电源,通过引入谐振式电容均流网络,实现了多路均流输出;通过整流桥的去除,进一步提升了系统的效率。最后,搭建了一台效率可达93.64%的140 W实验样机,验证了理论分析的正确性与可行性。

Structure optimization of organic light-emitting devices

A triple layer organic light-emitting diode (OLED) with two heterostructure of indium-tin oxide (ITO)/N,N’-diphenyl-N, N’-bis(1-naphthyl) (1,1’-biphenyl)-4,4’-diamine (NPB)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/ 8-Hydrox- yquinoline aluminum (Alq3)/Mg:Ag has been fabricated by using the vacuum deposition method. The influence of different film thickness of BCP layer on the performance of the OLEDs has been investigated. The results show that when the thickness of the BCP layer film gradually r...

不同线宽电流阻挡层的GaN基LED芯片光电特性研究

发光二极管(LED)由于具有低功耗、小体积、宽光谱范围等优点,被广泛应用于可见光通信、光电医疗、快速无损检测等微系统领域。为了进一步提高LED的发光效率,在图形化蓝宝石衬底上制备了具有不同线宽电流阻挡层(CBL)的氮化镓(GaN)基LED,并研究其光电特性。结果表明,在120mA测试电流作用下,由于CBL的插入增大了有源层有效光发射区域的电流密度,减少了p电极(p-pad)下的寄生光吸收,LED芯片的辐射功率与光电转换效率随着CBL线宽的增加而单调增加,在CBL线宽设计为13μm时,辐射功率与光电转换效率达到最大;正向电压(VF)随着CBL线宽的增加略有增加,表明绝缘的CBL层增大串联电阻。本文为CBL线宽的选择提供了新思路,可有效提高LED的发光效率。

Digitally programmable organic light‐emitting tetrodes

Limited to the structure of traditional light‐emitting devices,electronic devices that can directly convert machine language into human visual information without introducing any back‐end circuit are still not easy to achieve.Based on a specially designed three‐phase co‐planar electrode structure,a new type of three‐phase alternating current driven organic light‐emitting device with the integration of emission and control functions,full‐color tunability and simple device structure is demonstrated in this study.We integrate the light‐emitting function of color‐tunable light‐emitting devices and the switching of three triodes in a single three phase organic light‐emitting device.The state control of luminous color and luminance intensity merely requires the introduction of a kind of machine language,that is an easy‐to‐program 6‐bit binary number coded digital signals.The color adjustable area covers 66%of the color triangle of the National Television System Committee.Such simple and easy‐to‐integrate light‐emitting system has great potential applications in the next‐generation man‐machine interface.

High-performance and current crowding-free InGaN-GaN- based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

This work demonstrates high-performance and current crowding-free InGaN/GaN light-emitting diodes （LEDs） using an electrically-reverse-connected Schottky diode （SD） and an Mg-delta （δ） doped layer. Possible mechanism of carrier transport at the interface between transparent conducting electrode （TCE） and p-GaN with the δ-doped layer is also investigated. Results show that the LED with the SD and Mg delta （δ）-doping layer yields lower series resistance, higher output power, and lower reverse leakage current compared to normal LEDs. In addition, unlike the normal LED, there is no occurrence for the current crowding effect in the proposed LED even at high current density of 380mA/cm2. These remarkable behaviours clearly indicate that the use of the SD and δ- doping in the p-GaN region is very promising to achieve high-brightness and excellent-reliability GaN-based LEDs.

电流拥挤效应对GaN基发光二极管可靠性的影响

文中报道了绝缘蓝宝石衬底上的GaN基发光二极管(LEDs)中,由于横向电阻的存在造成了靠近n型电极台面边缘局部区域电流拥挤,为此从焦耳热和金属电迁移两方面研究了电流拥挤效应对器件可靠性的影响,加速寿命实验结果表明:电流均匀扩展可以使可靠性得到有效改善。

用于大功率LED驱动的单端反激恒流源设计

大功率发光二极管(Light Emitting Diode,简称LED)是一种可取代传统光源的新型光源,适合采用恒流驱动方式。设计了一种由220 V/50 Hz交流电供电的单端反激恒流源电路,对该恒流源电路进行了概要介绍,分析了电路的恒流原理并设计了反馈回路。该恒流源可为大功率LED提供恒定的电流,具有开路限压保护功能,满足对大功率LED的驱动要求。实验结果表明,采用该单端反激恒流源可驱动大功率LED。

高精度可编程恒流驱动白光LED芯片设计研究

实现了一种高精度可控白光LED恒流驱动芯片的设计.使用自动调零技术在内部集成了自动调零运算放大器,并采用外接电阻和使能设计控制恒定LED驱动电流,可在2.9 V到4.4 V的工作电压范围内提供3个不同的恒定驱动电流,最大驱动电流可达1 A.测试结果表明,当驱动电流从200 mA变化到800 mA时,外接电阻电流和LED驱动电流之比变化小于2.3%;电源电压跳变±10%的情况下,800 mA的驱动电流变化小于0.46%.