The microstructural features of hypoeutectic AI-10%Si alloy were observed using optical microscopy and electron backscatter diffraction. The results show that primary silicon particles are frequently found in hypoeute...The microstructural features of hypoeutectic AI-10%Si alloy were observed using optical microscopy and electron backscatter diffraction. The results show that primary silicon particles are frequently found in hypoeutectic alloys. Hence, the nucleation and growth mechanisms of the precipitation of primary silicon of hypoeutectic Al-10%Si alloy melts were investigated. It was discovered that Si atoms are easy to segregate and form Si-Si clusters, which results in the formation of primary silicon even in eutectic or hypoeutectic Al-Si alloys. In addition, solute redistribution caused by chemical driving force and large pile-ups or micro-segregation of the solute play an important role in the formation of the primary silicon, and the solute redistribution equations were derived from Jackson-Chalmers equations. Once Si solute concentration exceeds eutectic composition, primary silicon precipitates are formed at the front of solid/liquid interface.展开更多
The main objective of this work was to modify the microstructure and enhance the tribological properties of a new Zn-4Si al-loy through a high solidification cooling rate(SCR).According to the results,by increasing th...The main objective of this work was to modify the microstructure and enhance the tribological properties of a new Zn-4Si al-loy through a high solidification cooling rate(SCR).According to the results,by increasing the SCR from 2.0 to 59.5℃/s the average size of primary Si particles and that of the grains reduced from 76.1 and 3780μm to less than about 14.6 and 460μm,respectively.Augment-ing the SCR also enhanced the microstructural homogeneity,decreased the porosity content(by 50%),and increased the matrix hardness(by 36%).These microstructural changes enhanced the tribological behavior.For instance,under the applied pressure of 0.5 MPa,an in-crease in the SCR from 2.0 to 59.5℃/s decreased the wear rate and the average friction coefficient of the alloy by 57%and 23%,respect-ively.The wear mechanism was also changed from the severe delamination,adhesion,and abrasion in the slowly-cooled alloy to the mild tribolayer delamination/abrasion in the high-cooling-rate-solidified sample.展开更多
The electromagnetic directional solidification(DS)phase separation experiments of high silicon 90 wt.%Si–Ti alloy were performed under various pulling-down speeds.The results showed that Si enriched layer,Si+TiSi_(2)...The electromagnetic directional solidification(DS)phase separation experiments of high silicon 90 wt.%Si–Ti alloy were performed under various pulling-down speeds.The results showed that Si enriched layer,Si+TiSi_(2)-rich layer and Si–Ti–Fe alloy layer appeared successively in axial direction of ingot after electromagnetic DS of 90 wt.%Si–Ti alloy melt at different pulling-down speeds.Separation of primary Si and segregation mechanism of metal impurities(Fe)during the electromagnetic DS process were controlled by pulling-down speed of ingot and electromagnetic stirring.When pulling-down speed was 5μm/s,minimum thickness of the Si enriched layer was 29.4 mm,and the highest content of primary Si in this layer was 92.46 wt.%;meanwhile,the highest removal rate of Fe as metal impurity was 92.90%.The type of inclusions in the Si enriched layer is determined by Fe content of segregated Si enriched layer.When the pulling-down speed was 5μm/s,the inclusions in the Si enriched layer were TiSi_(2).Finally,when the pulling-down speed reached greater than 5μm/s,the inclusions in the Si enriched layer evolved into TiSi_(2)+τ_(5).展开更多
The primary silicon crystals and AI-Si alloy in hypereutectic A1-Si melt were separated by electromagnetic stirring and directional solidification. Additionally, the distribution feature of impurities in A1-Si system ...The primary silicon crystals and AI-Si alloy in hypereutectic A1-Si melt were separated by electromagnetic stirring and directional solidification. Additionally, the distribution feature of impurities in A1-Si system was verified. The results show that the impurities are mainly located in A1-Si alloy and the grain boundaries between the A1-Si alloy and primary silicon. Furthermore, the morphology of primary silicon changes from fish-bone like to plate like and spheroid due to the different Si contents. The amount of impurities decreases with the increasing of Si content in different positions of the sample. The amount of impurities in the bottom of the sample is approximately 10× 10^-6, which is obviously improved compared with the 1248.47 × 10^- 6 in metallurgical Si.展开更多
基金Project (U1134101) supported by the Mutual Foundation of Basic Research of High Speed Railway,ChinaProjects (ZR2009FL003,ZR2010EL011,ZR2011EMM003) supported by the Natural Science Foundation of Shandong Province,China
文摘The microstructural features of hypoeutectic AI-10%Si alloy were observed using optical microscopy and electron backscatter diffraction. The results show that primary silicon particles are frequently found in hypoeutectic alloys. Hence, the nucleation and growth mechanisms of the precipitation of primary silicon of hypoeutectic Al-10%Si alloy melts were investigated. It was discovered that Si atoms are easy to segregate and form Si-Si clusters, which results in the formation of primary silicon even in eutectic or hypoeutectic Al-Si alloys. In addition, solute redistribution caused by chemical driving force and large pile-ups or micro-segregation of the solute play an important role in the formation of the primary silicon, and the solute redistribution equations were derived from Jackson-Chalmers equations. Once Si solute concentration exceeds eutectic composition, primary silicon precipitates are formed at the front of solid/liquid interface.
文摘The main objective of this work was to modify the microstructure and enhance the tribological properties of a new Zn-4Si al-loy through a high solidification cooling rate(SCR).According to the results,by increasing the SCR from 2.0 to 59.5℃/s the average size of primary Si particles and that of the grains reduced from 76.1 and 3780μm to less than about 14.6 and 460μm,respectively.Augment-ing the SCR also enhanced the microstructural homogeneity,decreased the porosity content(by 50%),and increased the matrix hardness(by 36%).These microstructural changes enhanced the tribological behavior.For instance,under the applied pressure of 0.5 MPa,an in-crease in the SCR from 2.0 to 59.5℃/s decreased the wear rate and the average friction coefficient of the alloy by 57%and 23%,respect-ively.The wear mechanism was also changed from the severe delamination,adhesion,and abrasion in the slowly-cooled alloy to the mild tribolayer delamination/abrasion in the high-cooling-rate-solidified sample.
基金the Sichuan Science and Technology Program(2021YJ0548)Panzhihua Science and Technology Project(2020CY-G-15)+1 种基金Research Project of Panzhihua University(2020ZD002)Project of Sichuan Key Laboratory for comprehensive utilization of vanadium and titanium resources(2019FTSZ06,2020FTSZ01).
文摘The electromagnetic directional solidification(DS)phase separation experiments of high silicon 90 wt.%Si–Ti alloy were performed under various pulling-down speeds.The results showed that Si enriched layer,Si+TiSi_(2)-rich layer and Si–Ti–Fe alloy layer appeared successively in axial direction of ingot after electromagnetic DS of 90 wt.%Si–Ti alloy melt at different pulling-down speeds.Separation of primary Si and segregation mechanism of metal impurities(Fe)during the electromagnetic DS process were controlled by pulling-down speed of ingot and electromagnetic stirring.When pulling-down speed was 5μm/s,minimum thickness of the Si enriched layer was 29.4 mm,and the highest content of primary Si in this layer was 92.46 wt.%;meanwhile,the highest removal rate of Fe as metal impurity was 92.90%.The type of inclusions in the Si enriched layer is determined by Fe content of segregated Si enriched layer.When the pulling-down speed was 5μm/s,the inclusions in the Si enriched layer were TiSi_(2).Finally,when the pulling-down speed reached greater than 5μm/s,the inclusions in the Si enriched layer evolved into TiSi_(2)+τ_(5).
基金Project(u1137601)supported by the Joint Funds of the National Natural Science Foundation of ChinaProject(51066003)supported by the National Natural Science Foundation of China
文摘The primary silicon crystals and AI-Si alloy in hypereutectic A1-Si melt were separated by electromagnetic stirring and directional solidification. Additionally, the distribution feature of impurities in A1-Si system was verified. The results show that the impurities are mainly located in A1-Si alloy and the grain boundaries between the A1-Si alloy and primary silicon. Furthermore, the morphology of primary silicon changes from fish-bone like to plate like and spheroid due to the different Si contents. The amount of impurities decreases with the increasing of Si content in different positions of the sample. The amount of impurities in the bottom of the sample is approximately 10× 10^-6, which is obviously improved compared with the 1248.47 × 10^- 6 in metallurgical Si.
