Finished drinking water usually contains some residual aluminum.The deposition of residual aluminum in distribution systems and potential release back to the drinking water could significantly influence the water qual...Finished drinking water usually contains some residual aluminum.The deposition of residual aluminum in distribution systems and potential release back to the drinking water could significantly influence the water quality at consumer taps.A preliminary analysis of aluminum content in cast iron pipe corrosion scales and loose deposits demonstrated that aluminum deposition on distribution pipe surfaces could be excessive for water treated by aluminum coagulants including polyaluminum chloride（PACl）.In this work,the deposition features of different aluminum species in PACl were investigated by simulated coil-pipe test,batch reactor test and quartz crystal microbalance with dissipation monitoring.The deposition amount of non-polymeric aluminum species was the least,and its deposition layer was soft and hydrated,which indicated the possible formation of amorphous Al（OH）3.Al（13） had the highest deposition tendency,and the deposition layer was rigid and much less hydrated,which indicated that the deposited aluminum might possess regular structure and self-aggregation of Al（13）could be the main deposition mechanism.While for Al（30）,its deposition was relatively slower and deposited aluminum amount was relatively less compared with Al（13）.However,the total deposited mass of Al（30） was much higher than that of Al（13）,which was attributed to the deposition of particulate aluminum matters with much higher hydration state.Compared with stationary condition,stirring could significantly enhance the deposition process,while the effect of pH on deposition was relatively weak in the near neutral range of 6.7 to 8.7.展开更多
Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristic...Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.展开更多
基金supported by the National Natural Science Foundation of China(Nos.51378493,and 51178450)
文摘Finished drinking water usually contains some residual aluminum.The deposition of residual aluminum in distribution systems and potential release back to the drinking water could significantly influence the water quality at consumer taps.A preliminary analysis of aluminum content in cast iron pipe corrosion scales and loose deposits demonstrated that aluminum deposition on distribution pipe surfaces could be excessive for water treated by aluminum coagulants including polyaluminum chloride（PACl）.In this work,the deposition features of different aluminum species in PACl were investigated by simulated coil-pipe test,batch reactor test and quartz crystal microbalance with dissipation monitoring.The deposition amount of non-polymeric aluminum species was the least,and its deposition layer was soft and hydrated,which indicated the possible formation of amorphous Al（OH）3.Al（13） had the highest deposition tendency,and the deposition layer was rigid and much less hydrated,which indicated that the deposited aluminum might possess regular structure and self-aggregation of Al（13）could be the main deposition mechanism.While for Al（30）,its deposition was relatively slower and deposited aluminum amount was relatively less compared with Al（13）.However,the total deposited mass of Al（30） was much higher than that of Al（13）,which was attributed to the deposition of particulate aluminum matters with much higher hydration state.Compared with stationary condition,stirring could significantly enhance the deposition process,while the effect of pH on deposition was relatively weak in the near neutral range of 6.7 to 8.7.
基金Supported by National Natural Science Foundation of China(No.60876009)Natural Science Foundation of Tianjin(No.09JCZDJC16600)
文摘Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.
