We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction st...We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum （Al） back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.展开更多
This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc...This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.展开更多
This paper studies boron contamination at the interface between the p and i layers of μc-Si：H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary ...This paper studies boron contamination at the interface between the p and i layers of μc-Si：H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si：H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si：H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.展开更多
基金supported by the Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602)the Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500)+2 种基金the National Natural Science Foundation of China (Grant No. 60976051)the International Cooperation Project between China–Greece Government (GrantNo. 2009DFA62580)the Program for New Century Excellent Talents in University of China (NCET-08-0295)
文摘We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum （Al） back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.
基金supported by Hi-Tech Research and Development Program of China (Grant Nos.2007AA05Z436 and 2009AA050602)Science and Technology Support Project of Tianjin of China (Grant No.08ZCKFGX03500)+3 种基金National Basic Research Program of China (Grant Nos.2006CB202602 and 2006CB202603)National Natural Science Foundation of China (Grant No.60976051)International Cooperation Project between China-Greece Government (Grant Nos.2006DFA62390 and 2009DFA62580)Program for New Century Excellent Talents in University of China (Grant No.NCET-08-0295)
文摘This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.
基金Project supported by Hi-Tech Research and Development Program of China (Grant No 2007AA05Z436)Science and Technology Support Project of Tianjin (Grant No 08ZCKFGX03500)+4 种基金National Basic Research Program of China (Grant Nos 2006CB202602 and 2006CB202603)National Natural Science Foundation of China (Grant No 60506003)Starting Project of Nankai University (Grant No J02031)International Cooperation Project Between China-Greece Government (Grant No 2006DFA62390)Program for New Century Excellent Talents in University of China (NCET)
文摘This paper studies boron contamination at the interface between the p and i layers of μc-Si：H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si：H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si：H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.
