Friction and Wear Properties of Amorphous Carbon Nitride Coatings in Water Lubrication

The friction and wear properties of amorphous carbon nitride(a-CN x)coatings in water lubrication were reviewed.The influences of mating materials and tribological variables such as normal load(W)and sliding speed(V)on the friction and wear properties of the a-CN x coatings were analyzed.It was indicated that the specific wear rate of the a-CN x coatings was related to the hydration reaction of mating materials with water.If the mating materials were easily hydrated,the specific wear rate of a-CN x coatings was low.The water-lubricated properties of the a-CN x coatings were better in comparison to the a-C coatings.The a-CN x/Si-based non-oxide ceramics tribo-pairs exhibited the lowest friction coefficient and wear rate.To describe their friction and wear properties at the normal loads of 3—15Nand the sliding speeds of 0.05—0.5m/s,the wear-mechanism maps for the a-CN x/SiC(Si3N4)tribo-pairs in water were developed.

First-principles studies of the vibrational properties of amorphous carbon nitrides

Raman spectra of amorphous carbon nitride films （a-C：N） resemble those of typical amorphous carbon （a-C）, and no specific features in the spectra are shown due to N doping. The present work provides a correlation between the microstructure and vibrational properties of a-C：N films from first principles. The six periodic model structures of 64 atoms with various mass densities and nitrogen contents are generated by the liquid-quench method using Car-Parinello molecular dynamics. By using Raman coupling tensors calculated with the finite electric field method, Raman spectra are obtained. The calculated results show that the vibrations of C=N could directly contribute to the Raman spectrum. The similarity of the Raman line shapes of N-doped and N-free amorphous carbons is due to the overlapping of C=N and C=C vibration bands. In addition, the origin of characteristic Raman peaks is also given.

Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CNx:H Films Formed by Supermagnetron Plasma CVD

Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on Al films deposited on Si or glass (SiO2) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. a-CNx:H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CNx:H films deposited on the Al/Si or Al/SiO2 substrates showed same low threshold emission electric field (ETH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO2/a-CNx:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CNx:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.