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As_2S_8 planar waveguide:refractive index changes following an annealing and irradiation and annealing cycle,and light propagation features
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作者 邹林儿 王国日 +2 位作者 沈云 陈抱雪 矶守 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第11期18-23,共6页
The refractive index ofas-evaporatedamorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible. Upon successive treatment with annealing and non-saturation irradi... The refractive index ofas-evaporatedamorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible. Upon successive treatment with annealing and non-saturation irradiation and further annealing, the refractive index of the as-evaporated amorphous semiconductor As2S8 film reaches a maximum value and then its reversibility occurs upon annealing. The annealing of the amorphous semiconductor AS2S8 films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment, accompanied by a decrease of film thickness. The As2S8 planar waveguide after annealing (130 ℃) and saturation irradiation and annealing (130 ℃) shows a good propagation characteristic with ca, 0.27 dB/cm low propagation loss of the 632.8 nm guided mode. 展开更多
关键词 amorphous semiconductor chalcogenide As2S8 waveguide refractive index light propagation
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