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Numerical investigation of a double-junction a:Si Ge thin-film solar cell including the multi-trench region 被引量:1
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作者 K.Kacha F.Djeffal +2 位作者 H.Ferhati D.Arar M.Meguellati 《Journal of Semiconductors》 EI CAS CSCD 2015年第6期53-57,共5页
We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new mu... We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2- D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells. 展开更多
关键词 amorphous efficiency SIGE thin-film solar cell multi-trench
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