X-band inverse class-F GaN internally-matched power amplifier

An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.

A PHEMT Based Wideband LNA for Wireless Applications

This work is about the development of a super low noise amplifier with minimum power consumption and high gain for several wireless applications.The amplifier operates at frequency bands of 0.9-2.4 GHz and can be used in many applications like Wireless local area network(WLAN),WiFi,Bluetooth,ZigBee and Global System for mobile communications(GSM).This new design can be employed for the IEEE 802.15.4 standard in industrial,scientific and medical(ISM) Band.The enhancement mode pseudomorphic high electron mobility transistor PHEMT is used here due to its high linearity,better performance and less noisy operation.The common source inductive degeneration method is employed here to enhance the gain of amplifier.The amplifier produces a gain of more than 17 dB and noise figure of about 0.5 dB.The lower values of S11 and S22 reflect the accuracy of impedance matching network placed at the input and output sides of amplifier.Agilent Advance Design System(ADS) is used for the design and simulation purpose.Further the layout of design is developed on the FR4 substrate.

Optimal design of Er/Yb co-doped fiber amplifiers with an Yb-band fiber Bragg grating

In this paper, Er/Yb co-doped fiber amplifiers(EYDFAs) with an Yb-band fiber Bragg grating(FBG) at the pump end to improve the performance of the amplifier is systematically studied. The influence of the reflectivity and center wavelength of the FBG along with the gain-fiber length on the performance of an EYDFA are numerically analyzed. The results show that the wavelength of the FBG has critical influence on the efficiency of the EYDFA,whereas the requirement to its reflectivity is relaxed. It is an effective and promising way to improve the efficiency of a high-power pumped EYDFA by introducing a suitable Yb-band FBG at the pump end. Based on the analysis of the underlying principles, suggestions for the practical design and possible further improvement strategies are also proposed.

Investigation of Fiber Design for Discrete Raman Amplifiers

Aeff,R and gR of the optical fibers for discrete Raman amplifiers are theoretically and experimentally investigated. It is demonstrated that Gaussian approximation is adaptable for Aeff,R of these fibers, and gR does not depend on only core materials.