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An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers 被引量:2
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作者 霍凤伟 康仁科 +2 位作者 郭东明 赵福令 金洙吉 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第3期506-510,共5页
We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of... We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient. 展开更多
关键词 silicon wafer subsurface damage angle polishing defect etching wedge fringes
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