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Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells 被引量:4
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作者 Qin Jun-Rui Chen Shu-Ming +1 位作者 Liang Bin Liu Bi-Wei 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第2期624-628,共5页
Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi... Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability. 展开更多
关键词 single event upset multi-node charge collection static random access memory angulardependence
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