We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold sym...We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.展开更多
The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline all...The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, Indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.展开更多
A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and fil...A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.展开更多
We investigate the anisotropic magnetic transports in topological semimetal TaSb2. The compound shows the large magnetoresistance（MR） without saturation and the metal-insulator-like transition no matter whether the ...We investigate the anisotropic magnetic transports in topological semimetal TaSb2. The compound shows the large magnetoresistance（MR） without saturation and the metal-insulator-like transition no matter whether the magnetic field is parallel to c-axis or a-axis, except that the MR for B‖c is almost twice as large as that of B‖a at low temperatures. The adopted Kohler＇s rule can be obeyed by the MR at distinct temperatures for B‖c,but it is slightly violated as B‖a. The angle-dependent MR measurements exhibit the two-fold rotational symmetry below70 K,consistent with the monoclinic crystal structure of TaSb2. The dumbbell-like picture of angle-dependent MR in TaSb2 suggests a strongly anisotropic Fermi surface at low temperatures. However, it finally loses the two-fold symmetry over 70 K, implying a possible topological phase transition at around the temperature where Tm is related to a metal-insulator-like transition under magnetic fields.展开更多
Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isot...Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isotropic anisotropic magnetoresistance(AMR),AMR with geometric size effect,and interfacial effect.A reversal in sign of perpendicular AMR is found in the film CoO(3 nm)/Co(3 nm)/Pt(3 nm)compared to the film CoO(3 nm)/Co(3 nm)/CoO(3 nm),which is associated with Pt.Moreover,perpendicular AMR is tunable in the films CoO(3 nm)/Co(3 nm)/CoO(t)/Pt(3 nm)and CoO(3 nm)/Co(3 nm)/Pt(t)/CoO(3 nm)at will,with either positive or negative value,by varying the inserting layer thickness.The electronic structure information of the samples was measured by X-ray photoelectron spectroscopy(XPS).The spin-related transport and XPS results manifest that magnetic proximity effect,surface scattering,together with oxygen migration contribute to the tunable function of Pt.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.11974099)the Intelligence Introduction Plan of Henan Province,China in 2021(Grant No.CXJD2021008)+1 种基金the Plan for Leading Talent of Fundamental Research of the Central China in 2020the Key Scientific Research Project of Colleges and Universities in Henan Province,China(Grant No.21A140005)。
文摘We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.
基金Natural Science Foundation of Liaoning Province!(No. 972812).
文摘The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, Indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.
文摘A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61401136,11604299 and 61376094the Zhejiang Natural Science Foundation of China under Grant No LY18F010019+1 种基金the Open Program from Wuhan National High Magnetic Field Center under Grant No 2016KF03the General Program of Natural Science Foundation of Jiangsu Province under Grant No BK20171440
文摘We investigate the anisotropic magnetic transports in topological semimetal TaSb2. The compound shows the large magnetoresistance（MR） without saturation and the metal-insulator-like transition no matter whether the magnetic field is parallel to c-axis or a-axis, except that the MR for B‖c is almost twice as large as that of B‖a at low temperatures. The adopted Kohler＇s rule can be obeyed by the MR at distinct temperatures for B‖c,but it is slightly violated as B‖a. The angle-dependent MR measurements exhibit the two-fold rotational symmetry below70 K,consistent with the monoclinic crystal structure of TaSb2. The dumbbell-like picture of angle-dependent MR in TaSb2 suggests a strongly anisotropic Fermi surface at low temperatures. However, it finally loses the two-fold symmetry over 70 K, implying a possible topological phase transition at around the temperature where Tm is related to a metal-insulator-like transition under magnetic fields.
基金financially supported by the National Key Science Research Projects of China(No.2015CB921502)the National Natural Science Foundation of China(Nos.51331002,51371025,51471028,11504019)the Postdoctoral Science Foundation of China(No.2016M590043)。
文摘Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isotropic anisotropic magnetoresistance(AMR),AMR with geometric size effect,and interfacial effect.A reversal in sign of perpendicular AMR is found in the film CoO(3 nm)/Co(3 nm)/Pt(3 nm)compared to the film CoO(3 nm)/Co(3 nm)/CoO(3 nm),which is associated with Pt.Moreover,perpendicular AMR is tunable in the films CoO(3 nm)/Co(3 nm)/CoO(t)/Pt(3 nm)and CoO(3 nm)/Co(3 nm)/Pt(t)/CoO(3 nm)at will,with either positive or negative value,by varying the inserting layer thickness.The electronic structure information of the samples was measured by X-ray photoelectron spectroscopy(XPS).The spin-related transport and XPS results manifest that magnetic proximity effect,surface scattering,together with oxygen migration contribute to the tunable function of Pt.
