The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline all...The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, Indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.展开更多
We investigate the anisotropic magnetic transports in topological semimetal TaSb2. The compound shows the large magnetoresistance（MR） without saturation and the metal-insulator-like transition no matter whether the ...We investigate the anisotropic magnetic transports in topological semimetal TaSb2. The compound shows the large magnetoresistance（MR） without saturation and the metal-insulator-like transition no matter whether the magnetic field is parallel to c-axis or a-axis, except that the MR for B‖c is almost twice as large as that of B‖a at low temperatures. The adopted Kohler＇s rule can be obeyed by the MR at distinct temperatures for B‖c,but it is slightly violated as B‖a. The angle-dependent MR measurements exhibit the two-fold rotational symmetry below70 K,consistent with the monoclinic crystal structure of TaSb2. The dumbbell-like picture of angle-dependent MR in TaSb2 suggests a strongly anisotropic Fermi surface at low temperatures. However, it finally loses the two-fold symmetry over 70 K, implying a possible topological phase transition at around the temperature where Tm is related to a metal-insulator-like transition under magnetic fields.展开更多
The anisotropic magnetoresistance film is an important core material for developing the magnetic sensors.Here,Ta(5)/Mg O(3)/Ni Fe(10)/Mg O(3)/Ta(3)multilayers(in nanometer)were prepared by magnetron sputtering and fur...The anisotropic magnetoresistance film is an important core material for developing the magnetic sensors.Here,Ta(5)/Mg O(3)/Ni Fe(10)/Mg O(3)/Ta(3)multilayers(in nanometer)were prepared by magnetron sputtering and further applied to construct a sensor element by combining with the Wheatstone bridge.The 1/f noise of the sensor element was greatly reduced by three orders of magnitude after annealing at 400℃for 7200 s,which was mainly due to the significant microstructural changes during the annealing.However,when the sensor element was applied to detect the magnetic signal of a magnetic code disk with 512 N-S magnetic poles,the output voltage signal of the sensor displayed a large fluctuation of±0.05 V.In order to reduce the voltage fluctuation,a magnetic sensor chip by using a parallelly arranged multipath Wheatstone bridges and auto-gain compensation structure was designed,and magnetic sensor elements and the high-performance computing drive module were prepared.The output voltage fluctuation of the magnetic sensor was reduced by about 90%and approached to±0.005 V.These findings provide an important basis for the practical application of Ni Fe-based magnetic sensing film materials.展开更多
基金Natural Science Foundation of Liaoning Province!(No. 972812).
文摘The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, Indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61401136,11604299 and 61376094the Zhejiang Natural Science Foundation of China under Grant No LY18F010019+1 种基金the Open Program from Wuhan National High Magnetic Field Center under Grant No 2016KF03the General Program of Natural Science Foundation of Jiangsu Province under Grant No BK20171440
文摘We investigate the anisotropic magnetic transports in topological semimetal TaSb2. The compound shows the large magnetoresistance（MR） without saturation and the metal-insulator-like transition no matter whether the magnetic field is parallel to c-axis or a-axis, except that the MR for B‖c is almost twice as large as that of B‖a at low temperatures. The adopted Kohler＇s rule can be obeyed by the MR at distinct temperatures for B‖c,but it is slightly violated as B‖a. The angle-dependent MR measurements exhibit the two-fold rotational symmetry below70 K,consistent with the monoclinic crystal structure of TaSb2. The dumbbell-like picture of angle-dependent MR in TaSb2 suggests a strongly anisotropic Fermi surface at low temperatures. However, it finally loses the two-fold symmetry over 70 K, implying a possible topological phase transition at around the temperature where Tm is related to a metal-insulator-like transition under magnetic fields.
基金financially supported by the National Key Research and Development Program of China(Nos.2019YFB2005800 and 2019YFB1309902)the National Science Foundation of China(Nos.51871017 and 51871018)+3 种基金Beijing Natural Science Foundation(No.2192031)the Science and Technology Innovation Team Program of Foshan(No.FSOAA-KJ919-44020087)the Fundamental Research Funds for the Central Universities(No.FRF-TP-19-011B1)the Foundation of Beijing Key Laboratory of Metallic Materials and Processing for Modern Transportation。
文摘The anisotropic magnetoresistance film is an important core material for developing the magnetic sensors.Here,Ta(5)/Mg O(3)/Ni Fe(10)/Mg O(3)/Ta(3)multilayers(in nanometer)were prepared by magnetron sputtering and further applied to construct a sensor element by combining with the Wheatstone bridge.The 1/f noise of the sensor element was greatly reduced by three orders of magnitude after annealing at 400℃for 7200 s,which was mainly due to the significant microstructural changes during the annealing.However,when the sensor element was applied to detect the magnetic signal of a magnetic code disk with 512 N-S magnetic poles,the output voltage signal of the sensor displayed a large fluctuation of±0.05 V.In order to reduce the voltage fluctuation,a magnetic sensor chip by using a parallelly arranged multipath Wheatstone bridges and auto-gain compensation structure was designed,and magnetic sensor elements and the high-performance computing drive module were prepared.The output voltage fluctuation of the magnetic sensor was reduced by about 90%and approached to±0.005 V.These findings provide an important basis for the practical application of Ni Fe-based magnetic sensing film materials.
