Anisotropic Transport and Magnetic Properties of Charge-Density-Wave Materials RSeTe2（R=La,Ce,Pr,Nd）

Single crystals of RSeTe2 （R =La, Ce, Pr, Nd） are synthesized using LiC1/RbCI flux. Transport and magnetic properties in the directions parallel and perpendicular to the a-c plane are investigated. We find that the resistivity anisotropy P⊥/P∥ lies in the range 486-615 for different compounds at 2K, indicating the highly two-dimensional character. In both the orientations, the charge-density-wave transitions start near Tcow = 284（3）K, 316（3）K, 359（3）K for NdSeTe2, PrSeTe2, CeSeTe2, respectively, with a considerable increase in dc resistivity. While for LaSeTe2, no obvious resistivity anomaly is observed up to 380K. The value of TCDW increases monotonically with the increasing lattice parameters. Below TCDW, slight anomalies can be observed in NdSeTe2, PrSeTe2 and CeSeTe2 with onset temperature at 193（3）K, 161（3）K, 108（3）K, respectively, decreasing as lattice parameters increase. Magnetic susceptibility measurements show that the valence state of rare earth ions are trivalenee in these compounds. Antiferromagnetie-type magnetic order is formed in CeSeTe2 at 2.1 K, while no magnetic transition is observed in PrSeTe2 and NdSeTe2 down to 1.8 K.

Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb_(2)SiTe_(4)

Two-dimensional(2D)van der Waals material is a focus of research for its widespread application in optoelectronics,memories,and spintronics.The ternary compound Nb_(2)SiTe_(4) is a van der Waals semiconductor with excellent air stability and small cleavage energy,which is suitable for preparing a few layers counterpart to explore novel properties.Here,properties of bulk Nb_(2)SiTe_(4) with large in-plane electrical anisotropy are demonstrated.It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV.The carrier mobility measured at 100 K is about 213 cm^(2)·V^(-1)·s^(-1) in bulk Nb_(2)SiTe_(4),higher than the reported results.In a thin flake Nb_(2)SiTe_(4),the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K,indicating that there exists a large anisotropic transport behavior in their basal plane.These novel transport properties provide accurate information for modulating or utilizing Nb_(2)SiTe_(4) for electronic device applications.

Anisotropic Ballistic Transport through a Potential Barrier on Monolayer Phosphorene

We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene. Using an effective k .p Hamiltonian, we find that the transmission probability for transport through n-n-n （or n p-n） junction is an oscillating function of the incident angle, the barrier height, as well as the incident energy of electrons. The conductance in such systems depends sensitively on the transport direction due to the anisotropic effective mass. By tuning the Fermi energy and gate voltage, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.

Convergence of the Modified Discrete Ordinates Method for the Anisotropic Scattering Transport Equation

Criticality problem of nuclear tractors generMly refers to an eigenvalue problem for the transport equations. In this paper, we deal with the eigenvalue of the anisotropic scattering transport equation in slab geometry. We propose a new discrete method which was called modified discrete ordinates method. It is constructed by redeveloping and improving discrete ordinates method in the space of L1（X）. Different from traditional methods, norm convergence of operator approximation is proved theoretically. Furthermore, convergence of eigenvalue approximation and the corresponding error estimation are obtained by analytical tools.