Al specimens were covered with TiO2 film by sol-gel dip-coating and then anodized in ammonium adipate solution.The structure,composition and capacitance properties of the anodic oxide film were investigated by transmi...Al specimens were covered with TiO2 film by sol-gel dip-coating and then anodized in ammonium adipate solution.The structure,composition and capacitance properties of the anodic oxide film were investigated by transmission electron microscopy (TEM),Auger electron spectroscopy (AES),X-ray diffractometry (XRD) and electrochemical impedance spectroscopy (EIS).It was found that an anodic oxide film with a dual-layer structure formed between TiO2 coating and Al substrate.The film consisted of an inner Al2O3 layer and an outer Ti-Al composite oxide layer.The thickness of layers varied with the number of times of sol-gel dip-coating.The capacitance of anodic oxide films formed on coated specimens was at most 80% higher than that without TiO2.In film formation mechanism,it was claimed that the formation of composite oxide film was mainly affected by the structure of micro-pores network in TiO2 coating which had an influence on Al3+ and O2? ions transport during the anodizing.展开更多
Ti species have been deposited on low-voltage etched aluminum foils by a simple electrochemical method using a Ti anode as Ti source in a Ti-free I2-dissolved acetone solution. After annealing at 500-600℃ in air, an ...Ti species have been deposited on low-voltage etched aluminum foils by a simple electrochemical method using a Ti anode as Ti source in a Ti-free I2-dissolved acetone solution. After annealing at 500-600℃ in air, an Al2O3-TiO2 composite oxide film was formed on the surface of the etched aluminum foil by anodizing galvanostatically in an ammonium adipate solution. The effects of I2 concentration in the acetone solution, applied anode voltage, electrolysis time, and annealing temperature on the specific capacitance of the aluminum anode foils were investigated. The TiO2-deposited specimens prepared by applying a po-tential of 50V for 3 min in 2.5m MI2-added acetone solution followed by annealing at 550℃ after anodization exhibited the highest specific capacitance, with an enhancement of 22% compared with pure etched aluminum foil specimens. The electro-deposition process and the change of the anode voltage during the anodization were analyzed.展开更多
With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconduct...With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al<sub>2</sub>O<sub>3</sub> supported HfO<sub>2</sub> (AHO) thin films for a series of different Hf ratios with Al<sub>2</sub>O<sub>3</sub> dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO<sub>2</sub> film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO<sub>2</sub>/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO<sub>2</sub>/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm<sup>2</sup> at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10<sup>-9</sup> A/cm<sup>2</sup> at 0.5 MV/cm at room temperature. The acquired experimental results could show the possibility of compositional alloy thin films that could potentially replace or open new market for high-k challenges in semiconductor technology.展开更多
文摘Al specimens were covered with TiO2 film by sol-gel dip-coating and then anodized in ammonium adipate solution.The structure,composition and capacitance properties of the anodic oxide film were investigated by transmission electron microscopy (TEM),Auger electron spectroscopy (AES),X-ray diffractometry (XRD) and electrochemical impedance spectroscopy (EIS).It was found that an anodic oxide film with a dual-layer structure formed between TiO2 coating and Al substrate.The film consisted of an inner Al2O3 layer and an outer Ti-Al composite oxide layer.The thickness of layers varied with the number of times of sol-gel dip-coating.The capacitance of anodic oxide films formed on coated specimens was at most 80% higher than that without TiO2.In film formation mechanism,it was claimed that the formation of composite oxide film was mainly affected by the structure of micro-pores network in TiO2 coating which had an influence on Al3+ and O2? ions transport during the anodizing.
基金supported by the National Natural Science Foundation of China (21021002 & 51072170)
文摘Ti species have been deposited on low-voltage etched aluminum foils by a simple electrochemical method using a Ti anode as Ti source in a Ti-free I2-dissolved acetone solution. After annealing at 500-600℃ in air, an Al2O3-TiO2 composite oxide film was formed on the surface of the etched aluminum foil by anodizing galvanostatically in an ammonium adipate solution. The effects of I2 concentration in the acetone solution, applied anode voltage, electrolysis time, and annealing temperature on the specific capacitance of the aluminum anode foils were investigated. The TiO2-deposited specimens prepared by applying a po-tential of 50V for 3 min in 2.5m MI2-added acetone solution followed by annealing at 550℃ after anodization exhibited the highest specific capacitance, with an enhancement of 22% compared with pure etched aluminum foil specimens. The electro-deposition process and the change of the anode voltage during the anodization were analyzed.
文摘With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al<sub>2</sub>O<sub>3</sub> supported HfO<sub>2</sub> (AHO) thin films for a series of different Hf ratios with Al<sub>2</sub>O<sub>3</sub> dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO<sub>2</sub> film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO<sub>2</sub>/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO<sub>2</sub>/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm<sup>2</sup> at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10<sup>-9</sup> A/cm<sup>2</sup> at 0.5 MV/cm at room temperature. The acquired experimental results could show the possibility of compositional alloy thin films that could potentially replace or open new market for high-k challenges in semiconductor technology.
