Chemical dissolution resistance of anodic oxide layers formed on aluminum

Chemically resistant anodic oxide layers were formed on pure aluminum substrates in oxalic acid-sulphuric acid bath.Acid dissolution tests of the obtained anodic layers were achieved in accordance with the ASTM B 680-80 specifications：35mL/L 85% H3PO4＋20g/L CrO3 at 38℃.Influence of oxalic acid concentration,bath temperature and anodic current density on dissolution rate and coating ratio was examined,when the sulphuric acid concentration was maintained at 160g/L.It was found that chemically resistant and compact oxide layers were produced under low operational temperature （5℃） and high current densities （3A/dm^2）.A beneficial effect was observed concerning the addition of oxalic acid （18g/L）.The morphology and the composition of the anodic oxide layer were examined by scanning electron microscopy （SEM）,atomic force microscopy （AFM） and glow-discharge optical emission spectroscopy （GDOES）.

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO_2 on Al-doped ZnO transparent conductive layer

We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent throughpore anodic aluminum oxide（AAO） membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.