Anomalous Hall effect and electronic correlation in a spin-reoriented kagome antiferromagnet LuFe_(6)Sn_(6)

The kagome lattice system has been identified as a fertile ground for the emergence of a number of new quantumstates,including superconductivity,quantum spin liquids,and topological electronic states.This has attracted significantinterest within the field of condensed matter physics.Here,we present the observation of an anomalous Hall effect in aniron-based kagome antiferromagnet LuFe_(6)Sn_(6),which implies a non-zero Berry curvature in this compound.By means ofextensive magnetic measurements,a high Neel temperature,T_(N)=552 K,and a spin reorientation behavior were identifiedand a simple temperature-field phase diagram was constructed.Furthermore,this compound was found to exhibit a largeSommerfeld coefficient ofγ=87 mJ·mol^(-1)·K^(-2),suggesting the presence of a strong electronic correlation effect.Ourresearch indicates that LuFe_(6)Sn_(6)is an intriguing compound that may exhibit magnetism,strong correlation,and topologicalstates.

Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI_(2) van der Waals heterostructure

Valley-polarized quantum anomalous Hall effect(VQAHE), combined nontrivial band topology with valleytronics,is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI_(2) heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin–orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In_(2)Se_(3), the germanene/Mn I_(2)/In_(2)Se_(3) heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.

Enhanced anomalous Hall effect in kagome magnet YbMn_(6)Sn_(6)with intermediate-valence ytterbium

We report on the magnetization and anomalous Hall effect(AHE)in the high-quality single crystals of the kagome magnet YbMn_(6)Sn_(6),where the spins of the Mn atoms in the kagome lattice order ferromagnetically and the intermediate-valence Yb atoms are nonmagnetic.The intrinsic mechanism plays a crucial role in the AHE,leading to an enhanced anomalous Hall conductivity(AHC)compared with the other rare-earth RMn_(6)Sn_(6)compounds.Our band structure calculation reveals a strong hybridization between the 4f electrons of Yb and conduction electrons.

Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal Nb_(x)Zr_(1-x)Co_(2)Sn

Magnetic topological semimetal can host various topological non-trivial states leading to exotic novel transport properties.Here we report the systematic magneto-transport studies on the Heusler alloy Nb_(x)Zr_(1-x)Co_(2)Sn considered as a ferromagnetic(FM)Weyl semimetal.The cusp anomaly of temperature-dependent resistivity and large isotropic negative magneto-resistivity(MR)emerge around the FM transition consistent with the theoretical half-metallic predictions.The prominent anomalous Hall effect(AHE)has the same behavior with the applied field along various crystal directions.The Nb doping introduces more disorder resulting in the enhancement of the upturn for the temperature-dependent resistivity in low temperatures.With Nb doping,the AHE exhibits systemic evolution with the Fermi level lifted.At the doping level of x=0.25,the AHE mainly originates from the intrinsic contribution related to non-trivial topological Weyl states.

Tailoring-compensated ferrimagnetic state and anomalous Hall effect in quaternary Mn–Ru–V–Ga Heusler compounds

Cubic Mn_(2)Ru_(x)Ga Heusler compound is a typical example of compensated ferrimagnet with attractive potential for high-density,ultrafast,and low-power spintronic applications.In the form of epitaxial thin films,Mn_(2)Ru_(x)Ga exhibits high spin polarization and high tunability of compensation temperature by freely changing the Ru content x in a broad range(0.3<x<1.0).Herein Mn-Ru-Ga-based polycrystalline bulk buttons prepared by arc melting are systematically studied and it is found that in equilibrium bulk form,the cubic structure is unstable when x<0.75.To overcome this limitation,Mn-Ru-Ga is alloyed with a fourth element V.By adjusting the content of V in the By adjusting the content of V in the Mn_(2)Ru_(0.75)V_(y)Ga and Mn_(2.25-y)Ru_(0.75)V_(y)Ga quaternary systems the magnetic compensation temperature is tuned.Compensation is achieved near 300 K which is confirmed by both the magnetic measurement and anomalous Hall effect measurement.The analyses of the anomalous Hall effect scaling in quaternary Mn-Ru-V-Ga alloy reveal the dominant role of skew scattering,notably that contributed caused by the thermally excited phonons,in contrast to the dominant intrinsic mechanism found in many other 3d ferromagnets and Heusler compounds.It is further shown that the Ga antisites and V content can simultaneously control the residual resistivity ratio(RRR)as well as the relative contribution of phonon and defect to the anomalous Hall effect a"/a0'in Mn-Ru-V-Ga,resulting in a scaling relation a"/a0'∝RRR^(1.8).

Spin direction dependent quantum anomalous Hall effect in two-dimensional ferromagnetic materials

We propose a scheme for realizing the spin direction-dependent quantum anomalous Hall effect(QAHE)driven by spin-orbit couplings(SOC)in two-dimensional(2D)materials.Based on the sp^(3)tight-binding(TB)model,we find that these systems can exhibit a QAHE with out-of-plane and in-plane magnetization for the weak and strong SOC,respectively,in which the mechanism of quantum transition is mainly driven by the band inversion of p_(x,y)/p_(z)orbitals.As a concrete example,based on first-principles calculations,we realize a real material of monolayer 1T-SnN_(2)/PbN_(2)exhibiting the QAHE with in-plane/out-of-plane magnetization characterized by the nonzero Chern number C and topological edge states.These findings provide useful guidance for the pursuit of a spin direction-dependent QAHE and hence stimulate immediate experimental interest.

Room-temperature anomalous Hall effect and magnetroresistance in(Ga,Co)-codoped ZnO diluted magnetic semiconductor films

This paper reports that the （Ga, Co）-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2＋ and Ga3＋ ions substitute for Zn2＋ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic （Ga, Co）-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room tempera- ture. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

Ferromagnetism,variable range hopping,and the anomalous Hall effect in epitaxial Co:ZnO thin film

A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10 18 cm 3-10 20 cm 3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic,extrinsic,and external electric-field induced spin-orbit couplings

The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.

Quantum anomalous Hall effect in twisted bilayer graphene quasicrystal

The nontrivial topology is investigated in a dodecagonal quasicrystal made of 30° twisted bilayer graphene (TBG). Based on tight-binding model with both exchange field and Rashba spin–orbit coupling, the topological index, chiral edge states, and quantum conductance are calculated to distinguish its unique topological phase. A high Bott index (B = 4) quantum anomalous Hall effect (QAHE) is identified in TBG quasicrystal, which is robust to a finite perturbation without closing the nontrivial gap. Most remarkably, we have found that the multiple Dirac cone replicas in TBG quasicrystal are only a spectra feature without generating extra chiral edge states. Our results not only propose a possible way to realize the QAHE in quasicrystal, but also identify the continuity of nontrivial topology in TBG between crystal and quasicrystal.

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures

We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.

Current carrying states in the disordered quantum anomalous Hall effect

In a quantum Hall effect,flat Landau levels may be broadened by disorder.However,it has been found that in the thermodynamic limit,all extended(or current carrying)states shrink to one single energy value within each Landau level.On the other hand,a quantum anomalous Hall effect consists of dispersive bands with finite widths.We numerically investigate the picture of current carrying states in this case.With size scaling,the spectrum width of these states in each bulk band still shrinks to a single energy value in the thermodynamic limit,in a power law way.The magnitude of the scaling exponent at the intermediate disorder is close to that in the quantum Hall effects.The number of current carrying states obeys similar scaling rules,so that the density of states of current carrying states is finite.Other states in the bulk band are localized and may contribute to the formation of a topological Anderson insulator.

Anomalous Hall effect in ferromagnetic LaCo_(2)As_(2) and ferrimagnetic NdCo_(2)As_(2)

We conducted a comparative study of the magnetic and transport properties of single-crystalline LaCo_(2)As_(2) and NdCo_(2)As_(2).LaCo_(2)As_(2) is a soft metallic ferromagnet which exhibits purely intrinsic anomalous Hall effect(AHE) due to Co-3d electrons. With Nd-4f electronic magnetism, ferrimagnetic NdCo_(2)As_(2) manifests pronounced sign reversal and multiple hysteresis loops in temperature-and field-dependent magnetization, Hall resistivity, and magnetoresistance, due to complicated magnetic structural changes. We reveal that the AHE for NdCo_(2)As_(2) is stemming from the Co sub-lattice and deduce its phase diagram which includes magnetic compensation and two meta-magnetic phase transitions. The sensitivity of the Hall effect on the details of the magnetic structures in ferrimagnetic NdCo_(2)As_(2) provides a unique opportunity to explore the magnetic interaction between 4f and 3d electrons and its impact on the electronic structure.

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV_(3)Sb_(5)

Controlling the anomalous Hall effect(AHE)inspires potential applications of quantum materials in the next generation of electronics.The recently discovered quasi-2D kagome superconductor CsV_(3)Sb_(5) exhibits large AHE accompanying with the charge-density-wave(CDW)order which provides us an ideal platform to study the interplay among nontrivial band topology,CDW,and unconventional superconductivity.Here,we systematically investigated the pressure effect of the AHE in CsV_(3)Sb_(5).Our high-pressure transport measurements confirm the concurrence of AHE and CDW in the compressed CsV_(3)Sb_(5).Remarkably,distinct from the negative AHE at ambient pressure,a positive anomalous Hall resistivity sets in below 35 K with pressure around 0.75 GPa,which can be attributed to the Fermi surface reconstruction and/or Fermi energy shift in the new CDW phase under pressure.Our work indicates that the anomalous Hall effect in CsV_(3)Sb_(5) is tunable and highly related to the band structure.

Tb doping induced enhancement of anomalous Hall effect in NiFe films

Tbx（Ni0.8Fe0.2）1-x films with x ≤ 0.14 are fabricated and the anomalous Hall effect is studied. The intrinsic anomalous Hall conductivity and the extrinsic one from the impurity and phonon induced scattering both increase with increasing x. The enhancement of the intrinsic anomalous Hall conductivity is ascribed to both the weak spin–orbit coupling enhancement and the Fermi level shift. The enhancement of the extrinsic term comes from the changes of both Fermi level and impurity distribution. In contrast, the in-plane and the out-of-plane uniaxial anisotropies in the Tb Ni Fe films change little with x. The enhancement of the Hall angle by Tb doping is helpful for practical applications of the Hall devices.

Anomalous Hall effect in ferromagnetic Weyl semimetal candidate Zr1-x VxCo1.6Sn

We grew single crystals of vanadium-substituted,ferromagnetic Weyl semimetal candidate Zr1-xVxCo1.6Sn from molten tin flux.These solid solutions all crystallize in a full Heusler structure(L21)while their Curie temperatures and magnetic moments are enhanced by V-substitution.Their resistivity gradually changes from bad-metal-like to semiconductor-like with increasing x while the anomalous Hall effect(AHE),which can be well fitted by Tian-Ye-Jin(TYJ)scaling,[1]is also enhanced.Moreover,we find an apparent electron-electron interaction(EEI)induced quantum correction in resistivity at low temperature.The anomalous Hall conductivity(AHC)dominated by the intrinsic term is not corrected.

Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn_(4)N epitaxial films with perpendicular magnetic anisotropy

Epitaxial Mn_(4)N films with different thicknesses were fabricated by facing-target reactive sputtering and their anomalous Hall effect(AHE)is investigated systematically.The Hall resistivity shows a reversed magnetic hysteresis loop with the magnetic field.The magnitude of the anomalous Hall resistivity sharply decreases with decreasing temperature from300 K to 150 K.The AHE scaling law in Mn_(4)N films is influenced by the temperature-dependent magnetization,carrier concentration and interfacial scattering.Different scaling laws are used to distinguish the various contributions of AHE mechanisms.The scaling exponentγ>2 for the conventional scaling in Mn_(4)N films could be attributed to the residual resistivityρ_(xx0).The longitudinal conductivityσ_(xx)falls into the dirty regime.The scaling ofρ_(AH)=αρ_(xx0)+bρ_(xx)~nis used to separate out the temperature-independentρ_(xx0)from extrinsic contribution.Moreover,the relationship betweenρ_(AH)and pxx is fitted by the proper scaling to clarify the contributions from extrinsic and intrinsic mechanisms of AHE,which demonstrates that the dominant mechanism of AHE in the Mn4 N films can be ascribed to the competition between skew scattering,side jump and the intrinsic mechanisms.

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN_(2)CSCl MXene

Quantum anomalous Hall effect(QAHE)is an innovative topological spintronic phenomenon with dissipationless chiral edge states and attracts rapidly increasing attention.However,it has only been observed in few materials in experiments.Here,according to the first-principles calculations,we report that the MXene MoYN_(2)CSCl shows a topologically nontrivial band gap of 37.3 me V,possessing QAHE with a Chern number of C=1,which is induced by band inversion between d_(xz)and d_(yz)orbitals.Also,the topological phase transition for the MoYN_(2)CSCl can be realized via strain or by turning the magnetization direction.Remarkably,MoYN_(2)CSCl shows the nodal-line semimetal state dependent on the electron correlation U.Our findings add an experimentally accessible and tunable member to the QAHE family,which stands a chance of enriching the applications in spintronics.

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first-order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeemaa splitting and the spin-orbit splitting.