Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT

The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alter neutron irradiation, the collector currentI_c and the current gain beta decrease, and the base current I_b increases generally for SiGe HBT.The higher the neutron irradiation fluence is, the larger I_b increases. For conventional Si BJT,I_c and I_b increase as well as beta decreases much larger than SiGe HBT at the same fluence. It isshown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance thanSi BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.

Effect of irradiation on temperature performance of dispersioncompensation no-core cascade optical-fiber sensor coated with polydimethylsiloxane film

A temperature measurement device can produce data deviations and can even be damaged in a high-dose radiation environment.To reduce the radiation damage to such a device and improve the temperature measurement accuracy in a radiation environment,a temperature sensor based on optical-fiber sensing technology is proposed.This sensor has a cascade structure composed of a single-mode fiber(SMF),a dispersion-compensation fiber(DCF),a nocore fiber(NCF),and another SMF(SDNS).The DCF and NCF are coated with a polydimethylsiloxane(PDMS)film,which is a heat-sensitive material with high thermal optical and thermal expansion coefficients.In experiments,PDMS was found to produce an irradiation crosslinking effect after irradiation,which improved the temperature sensitivity of the SDNS sensor.The experimental results showed that within a range of 30–100℃,the maximum temperature sensitivity after irradiation was 62.86 pm/℃,and the maximum transmission sensitivity after irradiation was 3.353×10^(-2)dB/℃,which were 1.22 times and 2.267 times the values before irradiation,respectively.In addition,repeated temperature experiments verified that the SDNS sensor coated with the PDMS film had excellent temperature repeatability.Furthermore,it was found that with an increase in the irradiation intensity,the irradiation crosslinking degree of PDMS increased,and the temperature sensitivity of the sensor was improved.The proposed sensor could potentially be applied to temperature measurement in a nuclear-radiation environment.

Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT

The DC characteristics of SiGe HBT irradiated at different electron dose havebeen studied in a comparison with those of Si B JT. Generally, I_b and I_b - I_(b0) increase, I_c,I_c -I_(c0) and its +/- transition V_(be) as well as DC current gain ft decreases with increasingdose; increase of I_b -I_(b0) with increasing dose for Si BIT is much larger than that for SiGe HBT;beta increases with V_(be) or I_b, but decreases at I_b < 0.25 mA with I_b, and congregates athigher dose; and a damage factor d(beta) is much less at the same dose for SiGe HBT than for Si BJT.SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena forincrease of I_c, I_c -I_(c0), I_b -I_(b0) and beta at low dose have been found. Some electron trapshave been measured. The mechanism of changes of characteristics is discussed.

Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gain β decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well as /? decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation of β for both SiGe HBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

Real-Time Performance Assessment of Operating Photovoltaic (PV) Systems

A technology called solar energy is a very promising technique, and is considered as the cleanest and the most abundant renewable resource that is naturally available every day. In this paper, a MATLAB environment has been developed to calculate real-time power incidence on a PV system. It takes into account the time, location, PV tilt, and azimuth angles, and weather conditions to estimate incident power. In this paper, one case study is considered at New York State location. It has been applied to a newly installed 8 kW residential system located in Inwood. The solar panels are made up of silicon HIT (Heterojunction with Intrinsic Thin Layer) cells by Panasonic and solar cell rated at 19%. The result shows that the system is performing at its rated efficiency. The calculations involve the determination of direct, diffused and reflected radiation on the panels taking into account the time of the day, location, PV area, and orientations and weather conditions. The cloudiness index may be estimated based on the weather data and included in the calculations. After performing the irradiance calculations, the output power is estimated based on the rated efficiency at its temperature and compared with the generated output power. The real-time assessment of a PV system performance, during the operational time monitors the health of the PV system. The data obtained by this calculator may accompany production data provided to the consumer by the utility company.

Development and validation of a new oxide fuel rod performance analysis code for the liquid metal fast reactor

The integrity and reliability of fuel rods under both normal and accidental operating conditions are of great importance for nuclear reactors.In this study,considering various irradiation behaviors,a fuel rod performance analysis code,named KMC-Fueltra,was developed to evaluate the thermal–mechanical performance of oxide fuel rods under both normal and transient conditions in the LMFR.The accuracy and reliability of the KMC-Fueltra were validated by analytical solutions,as well as the results obtained from codes and experiments.The results indicated that KMC-Fueltra can predict the performance of oxide fuel rods under both normal and transient conditions in the LMFR.

Enhancing in-field performance of GdBCO coated conductors by cooperative irradiation with Ti ions and protons

Irradiation can accurately manipulate defects and adjust pinning landscapes within REBa_(2)Cu_(3)O_(7-δ) (REBCO, RE: rare earths) coated conductors (CCs). This study reports a productive method to dramatically boost the in-field critical current density (J_(c) ) for GdBCO CCs using cooperative irradiation with Ti ions and protons. Remarkably, the in-field J_(c) of commercial CCs can be almost doubled at a wide range of temperatures and magnetic fields. Defects of various sizes induced by cooperative irradiation are more uniform distribution through the entire GdBCO film to improve the vortex pinning characteristics, thereby enhancing the in-field performance of the GdBCO CC. This method highlights how combining different particle irradiation types can tailor defect size and distribution, optimizing pinning landscapes for commercial REBCO CCs.

光伏光热-双源热泵系统地区适用性研究

利用TRNSYS软件建立了光伏光热-双源热泵(PV/T-DSHP)系统仿真模型,选取拉萨和上海对PV/T-DSHP系统的运行特性进行了模拟分析,对不同室外气象条件(环境温度、太阳辐照度)下单一光伏-空气源热泵(PV-ASHP)系统和光伏光热-水源热泵(PV/T-WSHP)系统的性能系数进行了对比分析。结果表明:PV/T-DSHP系统在拉萨和上海的供暖季平均系统性能系数(COP s)分别为4.23和3.34;在太阳能资源一般区和丰富区,PV/T-WSHP系统较PV-ASHP系统在根据环境温度和太阳辐照度划定的最佳COP*s运行区域内运行更具性能优势。

γ射线辐照合成草甘膦异丙胺盐缓释剂及其性能

为提高农药利用率,减少农药使用量,有效解决农药对环境造成的不良影响,本研究采用辐照处理一步法对淀粉改性制得一种载体材料,通过负载草甘膦异丙胺盐后得到草甘膦异丙胺盐缓释剂。利用扫描电镜、红外光谱对缓释剂的形貌特征及结构组成进行表征,并探究了不同载药体系的缓释性能、表面张力及除草活性。相比于未负载的和凹凸棒土负载的草甘膦异丙胺盐,在720min时缓释剂的释放速率分别减缓了44.00%和20.45%;凹凸棒土负载的草甘膦异丙胺盐释放达平衡时间为1440min,而缓释剂为1700min。通过动力学分析拟合,草甘膦异丙胺盐释放曲线的First-order模型的相关系数R2在0.9566~0.9972,拟合度较高。进一步对比除草活性发现,草甘膦异丙胺盐缓释剂对稗草具有更优异的防治效果。综上所述,通过辐照制备载体材料的方法简单高效、节能环保,在此基础上合成的草甘膦异丙胺盐缓释剂具有良好的缓释性能及除草活性,为开发农药缓释剂提供了一种新方法。

新型光煤互补发电系统热力性能及技术经济性研究

为了减弱太阳能波动对光煤互补发电系统性能的影响,提出了新型光煤互补发电系统,建立了关键设备模型及子系统模型并进行验证,对新型光煤互补发电系统的热力性能及技术经济性进行了研究。结果表明:系统热力性能随运行负荷的下降而下降,随太阳辐照强度增加而先升高后下降;系统年均输出功率为699 MW,年均节煤率为7.506 g/(kW·h),年均光电效率为10.82%;储热时长为10 h时系统技术经济性最优,此时全寿命周期内净现值为4.18×10^(4)万元,内部收益率为11.81%,动态投资回收期为12.6 a,平均度电成本为0.402元/(kW·h),盈利能力较强。

γ辐照对InGaAsP/InP单光子雪崩探测器性能的影响

对InGaAsP/InP单光子雪崩探测器(SPADs)进行了总剂量为10 krad(Si)和20 krad(Si)的γ辐照,并进行了原位和移位测试。辐照后,暗电流和暗计数率有轻微的下降,而探测效率和后脉冲概率基本不变。经过一定时间的室温退火后,这些退化基本恢复,这表明瞬态电离损伤在γ辐照对InGaAsP/InP单光子雪崩探测器的损伤中占主导地位。

光辐照交联高密度聚乙烯耐环境应力开裂与直流电性能

为满足深海光电复合缆在高压力、强腐蚀性海水环境中的运行要求,文中选择具有良好阻水性能且可耐受直流高压的高密度聚乙烯(HDPE)作为电缆绝缘材料。但结晶度较高的HDPE耐环境应力开裂性能较差,为此采用交联改性来加强片晶间的作用力来保证材料在保持阻水性能的同时能极大地提高材料的耐开裂特性。鉴于HDPE加工温度高(~140℃),与传统的过氧化物交联及硅烷交联工艺适配性差的问题,提出了基于光敏的紫外光引发交联技术,配合一种含有多不饱和双键的交联助剂制备了不同交联度的HDPE材料。从拉伸与热延伸试验得出,随着材料交联度的提高,片晶间的相互作用明显增强,有效提升了材料的耐环境应力开裂性能(>900 h),并保持了优异的阻水特性(<0.125%);基于第一性原理计算,并结合空间电荷分布、直流电阻率与直流击穿强度测试得到,交联助剂的极性基团——羰基在材料内引入了0.8 eV的空穴陷阱与1.9 eV的电子深陷阱,在材料内部有效抑制了空间电荷注入现象,并提高了材料的直流电阻率,保持了材料的直流击穿强度。

在煤油介质中TODGA的γ辐射分解及萃取性能研究

N,N,N’,N’-四辛基-3-氧戊二酰胺(N,N,N’,N’-tetraoctyl-diglycolamide,TODGA)是一种具有广泛发展前景的针对锕系核素萃取分离的酰胺荚醚类萃取剂。为研究TODGA在煤油介质中的γ辐照性能,研究采用超高效液相色谱手段,以煤油作稀释剂,研究了水相中不同硝酸浓度下γ吸收剂量对TODGA辐解的影响;评价了辐照后TODGA-煤油-3 mol·L^(-1)硝酸混合体系对碱土金属、镧系元素的萃取性能变化。研究表明:TODGA的辐解率随着体系中硝酸浓度的升高而逐渐下降,当水相添加4 mol·L^(-1)硝酸水溶液,相较于不含硝酸水溶液时可抑制18%程度的辐解。而吸收剂量的增加导致了TODGA辐解增加,当吸收剂量低于100 kGy时,TODGA的辐解程度为10%~40%;当吸收剂量为1000 kGy时,TODGA的辐解增加明显,辐解率高达70%。TODGA辐解主要由醚键断裂导致,在硝酸水溶液的作用下改变辐解路径,还会发生辛基侧链的断裂。TODGA对碱土金属元素Sr的初始萃取率为25%,吸收剂量为100 kGy时几乎不萃取Sr,而其对镧系元素(Ce、Eu、Dy)的萃取率接近100%。

GaAs三结太阳电池1MeV中子辐射效应研究

研究了金属有机气相外延(MOCVD)方法制备的晶格匹配(LM)和正向晶格失配(UMM)砷化镓三结太阳电池在1 MeV中子辐照后的电学和光学性能衰退情况。结果表明:在中子辐照下,电池电学性能,包括短路电流(J_(sc))、开路电压(V_(oc))、最大功率(P_(max))、填充因子(FF)均发生明显衰降,且衰降幅度随注量增加;电池串联电阻Rs随注量增加,并联电阻Rsh随注量减小。在相同注量下,LM和UMM的P_(max)退化情况相近,当中子注量达到6×10^(12)n/cm^(2)时,LM和UMM电池的最大输出功率Pmax分别下降至初始值的72.9%和72.3%。由外量子效率(EQE)光谱退化曲线和子电池积分电流密度可知,两种电池的中电池光电流退化均最明显且为电池的限流子电池。

增强型Cascode结构GaN HEMT器件中子辐照效应研究

为探究增强型共源共栅(Cascode)结构GaN HEMT器件的中子辐照效应及机理,首先利用归一化能量为1 MeV、注量为1×10^(14) n/cm^(2)的中子源开展辐照效应试验,并对辐照前/后器件的电学特性进行测试,结果表明,经过中子辐照后,器件的阈值电压发生明显的负向漂移,且跨导峰值减小。后续又分别对器件中级联的增强型Si MOSFET和耗尽型GaN HEMT开展Geant4能量沉积仿真和TCAD辐照损伤仿真,结果表明,增强型Si MOSFET的能损和电学性能退化较为严重。其原因是:中子辐照对器件造成位移损伤,且产生的次级重核对器件造成电离损伤,引起Si/SiO_(2)交界处电场强度上升及内部载流子浓度降低,从而导致阈值电压负漂及饱和漏极电流下降。研究结果可为增强型Cascode结构GaN HEMT器件在辐射环境下的应用提供理论参考。

高导电硅橡胶环境适应性研究

以镀银铝粉填充硅橡胶制备的高导电硅橡胶为研究对象,通过对比初始与航空机载设备各环境试验后的性能测试结果,分析了高导电硅橡胶的环境适应性。结果表明:高温、低温、温度冲击、湿热、盐雾、霉菌、酸性大气、臭氧和太阳辐照环境对高导电硅橡胶的密度和硬度基本无影响;拉伸强度、断裂伸长率在太阳辐照和臭氧环境后降低;表面电阻在56 d太阳辐照环境后,由0.028Ω增大到0.156Ω,电性能衰减明显。因此,在设计和使用镀银铝粉填充的高导电硅橡胶时需要对其导电性能预留一定的下降裕度,方可满足设备耐久性要求。

不同气候带的光伏电站运行数据对比分析研究

光伏电站在户外实际工况下运行时,由于不同区域的气候条件不同,导致光伏电站的运行情况千差万别。日照强烈,环境温度、湿度大幅度变化,酸雨侵蚀,风沙蚀击等气象因素势必会影响光伏发电设备的发电性能,加速其老化程度,最终影响光伏电站的发电效率和寿命。基于中国现有的气候带分类,对不同气候带的气候特征进行了分析,然后对不同气候带中光伏电站的运行数据进行了对比,分析了不同气象因素对光伏电站发电性能和发电量差异的影响。研究结果表明:由于不同气候带的太阳能资源禀赋、环境温度等气象因素差异较大,对各气候带中光伏电站的工作电压、工作电流、输出功率等电性能参数的影响不同,因此光伏电站建设时需结合不同气候带的气候特征进行设备选型和优化设计方案,以保证光伏电站投运后可达到最佳运行效果。

不同改性方法对石墨烯辐伏同位素电池输出性能的影响

石墨烯辐伏同位素电池是石墨烯在半导体和微电子领域中的一种应用,其中对石墨烯进行修饰改性是改善石墨烯在这些领域中应用的一项重要研究内容。本研究对比硝酸掺杂和电子束辐照两种不同石墨烯改性方法对石墨烯辐伏同位素电池输出性能的影响。同时,结合光镜、X射线光电子能谱仪(XPS)和拉曼光谱等分析测试手段,研究了两种不同方法对石墨烯材料改性的作用机理。结果表明,硝酸掺杂是一种表面电荷转移的过程,并不能使石墨烯中sp^(2)杂化碳原子转变为sp^(3)杂化,但能提高石墨烯辐伏同位素电池的短路电流;而电子束辐照石墨烯会在石墨烯中引入缺陷,使石墨烯中sp^(2)杂化碳原子转变为sp^(3)杂化,从而打开石墨烯的带隙,改善石墨烯辐伏同位素电池的开路电压和填充因子。以上结果可为石墨烯辐伏同位素电池的设计和制备提供实验理论依据,并为进一步提高石墨烯辐伏同位素电池的性能提供参考。

基于卷积神经网络的氢氦协同效应下的空洞演化预测

[目的]了解辐照引起的核结构材料的降质过程对于反应堆安全运行至关重要.然而,由于辐照损伤实验和基于物理的多尺度模拟存在时间和资源密集性的特点,无法快速评估材料的空洞演化行为.[方法]应用卷积神经网络(CNN)对空洞尺寸和数密度进行预测,并在现有的实验数据范围外,对氦和氢注入量在连续参数变化范围内的相关性进行预测.[结果]经过参数优化的CNN可以很好地克服实验数据不足的限制,仅利用元素组分和环境参数即获得准确的数值回归.[结论]这项工作证明了CNN预测氢氦协同效应下辐照损伤的可行性,对核材料的优化和反应堆安全运行具有实际意义.