Effect of thickness of antimony selenide film on its photoelectric properties and microstructure

Antimony selenide(Sb2Se3) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg–Marquardt method and spectral fitting method(LM–SFM) is presented to study the dependence of refractive index(RI), absorption coefficient, optical band gap, Wemple–Di Domenico parameters, dielectric constant and optical electronegativity of the Sb2Se3films on their thickness. The results show that the RI and absorption coefficient of the Sb2Se3films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness are explained by x-ray diffractometer(XRD), energy dispersive x-ray spectrometer(EDS), Mott–Davis state density model and Raman microstructure analysis.

Development of antimony sulfide–selenide Sb2(S,Se)3-based solar cells

Antimony sulfide–selenide Sb2（S,Se）3,including Sb2S3and Sb2Se3,can be regarded as binary metal chalcogenides semiconductors since Sb2S3and Sb2Se3are isomorphous.They possess abundant elemental storage,nontoxicity,good stability with regard to moisture at elevated temperatures and suitable physical parameters for light absorption materials in solar cells.To date,quite a few attempts have been conducted in the materials synthesis,photovoltaic property investigation and device fabrication.Benefiting from previous investigation in thin film solar cells and new generation nanostructured solar cells,this class of materials has been applied in either sensitized-architecture or planar heterojunction solar cells.Decent power conversion efficiencies from 5%to 7.5%have been achieved.Apparently,further improvement on the efficiency is required for future practical applications.To give an overview of this research field,this paper displays some typical researches regarding the methodologies toward the antimony sulfide–selenide synthesis,development of interfacial materials and device fabrications,during which we highlight some critical findings that promote the efficiency enhancement.Finally,this paper proposes some outstanding issue regarding fundamental understanding of the materials,some viewpoints for the efficiency improvement and their future challenges in solar cell applications.

Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe_2 thin films

Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV-vis-NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

Effect of sulfur doping on the dielectric properties of Sb_(2)Se_(3) system

In this paper,we report the effect of sulfur doping on the electrical and dielectric properties of semiconducting Sb_(2)Se_(2)S over wide ranges of temperatures(298–473 K)and frequencies(42–10^(6) Hz).Sb_(2)Se_(2)S system has been prepared by the direct fusion and cooling cycle of a mixture of the constituent elements,in stoichiometric ratio and purity 99.999%,in vacuum-sealed silica tubes.X-ray analysis showed a decrease in the cell parameters a,b and c upon doping with sulfur.However,the pure and doped Sb_(2)Se_(3) showed the single orthorhombic phase structure.The permittivity of Sb_(2)Se_(2)S showed a decrease with increasing frequency due to a decrease in the average bond strength.While,ac conductivity increased with the frequency increase,obeying the Jonscher’s universal dynamic law.The conductivity temperature dependence is well described by the correlated barrier hopping model.The activation energy calculated from DC conductivity is found at higher value(0.79 eV)as compared to that reported in the literature for other antimony selenide compounds.Accordingly,a new Sb_(2)Se_(2)S compound is suggested which may be useful for electronic devices.