The electronic transport properties of armchair-edged boron nitride nanoribbons（ABNNRs） devices were investigated by the first principle calculations. The calculated results show that the ABNNR device doped with car...The electronic transport properties of armchair-edged boron nitride nanoribbons（ABNNRs） devices were investigated by the first principle calculations. The calculated results show that the ABNNR device doped with carbon atoms in one of the electrodes acts as a high performance nanoribbon rectifier. It is interesting to find that there exists a particular bias-polarity-dependent matching band between two electrodes,leading to a similar current-voltage（I-V） behavior as conventional P-N diodes. The I-V behavior presents a linear positive-bias I-V characteristic,an absolutely negligible leakage current,and a stable rectifying property under a large bias region. The results suggest that C doping might be an effective way to raise ABNNRs devices＇ rectifying performance.展开更多
This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon （AGNR）. Using the Dirac equation with the continuity condition for wave functions at the i...This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon （AGNR）. Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.展开更多
基金supported by the National Natural Science Foundation of China(21401023 and 21374017)Cultivating Fund for Excellent Young Scholar of Fujian Normal University(FJSDJK2012063)Program for Innovative Research Team in Science and Technology in Fujian Province University(IRTSTFJ)
文摘The electronic transport properties of armchair-edged boron nitride nanoribbons（ABNNRs） devices were investigated by the first principle calculations. The calculated results show that the ABNNR device doped with carbon atoms in one of the electrodes acts as a high performance nanoribbon rectifier. It is interesting to find that there exists a particular bias-polarity-dependent matching band between two electrodes,leading to a similar current-voltage（I-V） behavior as conventional P-N diodes. The I-V behavior presents a linear positive-bias I-V characteristic,an absolutely negligible leakage current,and a stable rectifying property under a large bias region. The results suggest that C doping might be an effective way to raise ABNNRs devices＇ rectifying performance.
基金Project supported by National Natural Science Foundation of China (Grant No. 10974052)Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20060542002)
文摘This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon （AGNR）. Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.
