Anovelprofile error model to calculate contact error

A new profile model based on multi-scale asperities is developed and contact error is cal- culated. After stratified sampling, the model can get the distribution law of entity points on each cross section. Asperity radius of curvature is estimated by the relationship between circle radius and the section interval. Contact error is related to surface form error. A model equation of contact error plane is calculated through a method based on static equilibrium theory. Three contact asperities which determine the contact error plane on the rough surface are studied. The simulation results show that contact error can be accurately calculated according to the profile error model.

Prediction of near-field strong ground motions for scenario earthquakes on active fault

A method to predict near-field strong ground motions for scenario earthquakes on active faults is proposed. First, macro-source parameters characterizing the entire source area, i.e., global source parameters, including fault length, fault width, rupture area, average slip on the fault plane, etc., are estimated by seismogeology survey, seismicity and seismic scaling laws. Second, slip distributions characterizing heterogeneity or roughness on the fault plane, i.e., local source parameters, are reproduced/evaluated by the hybrid slip model. Finally, the finite fault source model, developed from both the global and local source parameters, is combined with the stochastically synthetic technique of ground motion using the dynamic comer frequency based on seismology. The proposed method is applied to simulate the acceleration time histories on three base-rock stations during the 1994 Northridge earthquake. Comparisons between the predicted and recorded acceleration time histories show that the method is feasible and practicable.

Scratching by pad asperities in copper electrochemical-mechanical polishing

Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data.