According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size...According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan, Himeji institute of technology (HIT) has developed an EUVL laboratory tool , which has a practical exposure field of 30mm×28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm×1mm. And using scanning stages, 100 nm L&S patterns have been replicated in the field of 10mm×5 mm.展开更多
文摘According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan, Himeji institute of technology (HIT) has developed an EUVL laboratory tool , which has a practical exposure field of 30mm×28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm×1mm. And using scanning stages, 100 nm L&S patterns have been replicated in the field of 10mm×5 mm.
