Objective The aim of this study was to determine the effect of a new method of cardiac assistant therapy with an extra-aortic balloon pump on the experimental dogs in which myocardial ischemia or infarction were induc...Objective The aim of this study was to determine the effect of a new method of cardiac assistant therapy with an extra-aortic balloon pump on the experimental dogs in which myocardial ischemia or infarction were induced,and to observe its effectiveness and feasibility. Methods Twelve animal models of myocardia,1 infarction were established with the method of left展开更多
Trap-assisted tunneling(TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor(TFET). In this paper, we assess subthreshold perf...Trap-assisted tunneling(TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor(TFET). In this paper, we assess subthreshold performance of double gate TFET(DG-TFET) through a band-to-band tunneling(BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile(D_(it)) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.展开更多
文摘Objective The aim of this study was to determine the effect of a new method of cardiac assistant therapy with an extra-aortic balloon pump on the experimental dogs in which myocardial ischemia or infarction were induced,and to observe its effectiveness and feasibility. Methods Twelve animal models of myocardia,1 infarction were established with the method of left
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)
文摘Trap-assisted tunneling(TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor(TFET). In this paper, we assess subthreshold performance of double gate TFET(DG-TFET) through a band-to-band tunneling(BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile(D_(it)) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.