Survivability is used to evaluate the ability of the satellite to complete the mission after failure,while the duration of maintaining performance is often ignored.An effective backup strategy can restore the constell...Survivability is used to evaluate the ability of the satellite to complete the mission after failure,while the duration of maintaining performance is often ignored.An effective backup strategy can restore the constellation performance timely,and maintain good network communication performance in case of satellite failure.From the perspective of network utility,the low Earth orbit(LEO)satellite constellation survivable graphical eva-luation and review technology(GERT)network with backup satel-lites is constructed.A network utility transfer function algorithm based on moment generating function and Mason formula is proposed,the network survivability evaluation models of on-orbit backup strategy and ground backup strategy are established.The survivable GERT model can deduce the expected mainte-nance time of LEO satellite constellation under different fault states and the network utility generated during the state mainte-nance period.The case analysis shows that the proposed surviv-able GERT model can consider the satellite failure rate,backup satellite replacement rate,maneuver control replacement ability and life requirement,and effectively determine the optimal sur-vivable backup strategy for LEO satellite constellation with limi-ted resources according to the expected network utility.展开更多
We present a quantum study on the electrical behavior of the self-switching diode(SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this...We present a quantum study on the electrical behavior of the self-switching diode(SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method,electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero,reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters.展开更多
基金This work was supported by the National Natural Science Foundation of China(72271124,52232014,72071111,71801127,71671091).
文摘Survivability is used to evaluate the ability of the satellite to complete the mission after failure,while the duration of maintaining performance is often ignored.An effective backup strategy can restore the constellation performance timely,and maintain good network communication performance in case of satellite failure.From the perspective of network utility,the low Earth orbit(LEO)satellite constellation survivable graphical eva-luation and review technology(GERT)network with backup satel-lites is constructed.A network utility transfer function algorithm based on moment generating function and Mason formula is proposed,the network survivability evaluation models of on-orbit backup strategy and ground backup strategy are established.The survivable GERT model can deduce the expected mainte-nance time of LEO satellite constellation under different fault states and the network utility generated during the state mainte-nance period.The case analysis shows that the proposed surviv-able GERT model can consider the satellite failure rate,backup satellite replacement rate,maneuver control replacement ability and life requirement,and effectively determine the optimal sur-vivable backup strategy for LEO satellite constellation with limi-ted resources according to the expected network utility.
文摘We present a quantum study on the electrical behavior of the self-switching diode(SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method,electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero,reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters.
