Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CNx:H Films Formed by Supermagnetron Plasma CVD

Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on Al films deposited on Si or glass (SiO2) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. a-CNx:H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CNx:H films deposited on the Al/Si or Al/SiO2 substrates showed same low threshold emission electric field (ETH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO2/a-CNx:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CNx:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.

An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling （BTBT） efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane＇s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

Tunneling dynamics of bosons in the diamond lattice chain

We analyze the effect of tilting and artificial magnetic flux, on the energy bands structure for the system and the corresponding tunneling dynamics for bosons with various initial configurations in the diamond lattice chain, where intriguing and significant phenomena occur, including Landau–Zener tunneling, Bloch oscillations, and localization phenomenon.Both vertical tilting and artificial magnetic flux may alter the structure of energy levels（dispersion structure or flat band）,and enforce the occurrence of Landau–Zener tunneling, which scans the whole of the Bloch bands. We find that, transitions among Landau–Zener tunneling, Bloch oscillations, and localization phenomenon, are not only closely related to the energy bands structure, but also depends on the initial configuration of bosons in the diamond lattice chain. As a consequence,Landau–Zener tunneling, Bloch oscillations, and localization phenonmenon of bosons always counteract and are complementary with each other in the diamond lattice chain.

INVESTIGATION ON RESONANT TUNNELING IN GaAs/Al_xGa_(1-x)As DBD USING TUNNELING SPECTROSCOPY

Experimental investigation on resonant tunneling in various GaAs/AlxGa1-xAsdouble barrier single well structures has been performed by using tunneling spectroscopy atdifferent temperatures.The results show that in addition to resonant tunneling via GaAs wellstate confined by AlxGa1-xAs Γ-point barrier there exists resonant tunneling via GaAs well stateconfined by AlxGa1-xAs X-point barrier for both indirect（x】0.4）and direct（x【0.4）cases.

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

By using the linear combination of bulk band （LCBB） method incorporated with the top of the barrier splitting （TBS） model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate （DG） metal-oxide semiconductor field-effect transistors （MOSFETs）. A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness （2.0 nm and below） by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.

Two-dimensional threshold voltage model of a nanoscale silicon-on-insulator tunneling field-effect transistor

The tunneling field-effect transistor（TFET） is a potential candidate for the post-CMOS era.In this paper,a threshold voltage model is developed for this new kind of device.First,two-dimensional（2D） models are used to describe the distributions of potential and electric field in the channel and two depletion regions.Then based on the physical definition of threshold voltage for the nanoscale TFET,the threshold voltage model is developed.The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data.It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper.This threshold voltage model provides a valuable reference to TFET device design,simulation,and fabrication.

High on-state current p-type tunnel effect transistor based on doping modulation

To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier.Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure.This method provides a new idea for the realization of high on-state current TFET devices.

Design and Analysis of Graphene Based Tunnel Field Effect Transistor with Various Ambipolar Reducing Techniques

The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.

Hg_(0.72)Cd_(0.28)Te扫描隧道谱的模型解释

本工作利用截面扫描隧道显微镜(XSTM)研究了分子束外延生长的Hg_(0.72)Cd_(0.28)Te薄膜。扫描隧道谱(STS)测量表明,此碲镉汞材料的电流-电压(I/V)隧道谱呈现的零电流平台宽度(隧道谱表观带隙)比其实际材料带隙增大约130%,说明存在明显的针尖诱导能带弯曲(TIBB)效应。扫描隧道谱三维TIBB模型计算发现低成像偏压测量时获取的I/V隧道谱数据与理论计算结果有令人满意的一致性。然而较大成像偏压时所计算的I/V谱与实验谱线在较大正偏压区域存在一定偏离。这是目前的TIBB模型未考虑带带隧穿、缺陷辅助隧穿等碲镉汞本身的输运机制对隧道电流的影响造成的。

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

A novel vertical graded source tunnel field-effect transistor(VGS-TFET)is proposed to improve device performance.By introducing a source with linearly graded component,the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing(SS)due to the improved band-to-band tunneling efficiency.Compared with the conventional TFETs,much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec.Furthermore,the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.

Edge-and strain-induced band bending in bilayer-monolayer Pb_(2)Se_(3) heterostructures

By using scanning tunneling microscope/microscopy(STM/STS), we reveal the detailed electronic structures around the sharp edges and strained terraces of lateral monolayer-bilayer Pd_(2)Se_(3) heterostructures. We find that the edges of such heterostructures are well-defined zigzag type. Band bending and alignment are observed across the zigzag edge, forming a monolayer-bilayer heterojunction. In addition, an n-type band bending is induced by strain on a confined bilayer Pd_(2)Se_(3) terrace. These results provide effective toolsets to tune the band structures in Pd_(2)Se_(3)-based heterostructures and devices.

Band Gap Opening of Graphene by Noncovalent π-π Interaction with Porphyrins

Graphene has been recognized as a promising 2D material with many new properties. However, pristine graphene is gapless which hinders its direct application towards graphene-based semiconducting devices. Recently, various ways have been proposed to overcome this problem. In this study, we report a robust method to open a gap in graphene via noncovalent functionalization with porphyrin molecules. Two type of porphyrins, namely, iron protoporphyrin (FePP) and zinc protoporphryin (ZnPP) were independently physisorbed on graphene grown on nickel by chemical vapour deposition (CVD) resulting in a bandgap opening in graphene. Using a statistical analysis of scanning tunneling spectroscopy (STS) measurements, we demonstrated that the magnitude of the band gap depends on the type of deposited porphyrin molecule.The π-π stacking of FePP on graphene yielded a considerably larger band gap value (0.45 eV) than physisorbed ZnPP (0.23 eV). We proposed that the origin of different band gap value is governed due to the metallic character of the respective porphyrin.

基于注意力改进卷积网络的隧道风机预埋基础损伤识别

针对隧道风机预埋基础损伤信息微弱、特征难以提取等问题,提出一种基于度量-频段注意力卷积神经网络的隧道风机预埋基础损伤识别方法。首先,通过预埋基础冲激试验的激励信号和响应信号,计算预埋基础的频率响应函数并作为损伤识别模型的输入;然后,使用多层卷积将输入的频率响应函数映射到特征空间提取损伤特征信息;再次,采用频段注意力机制对不同频段上的特征进行自适应加权融合,并采用度量损失进一步增强提取特征的可辨识性;最后,将提取的特征输入全连接层以实现预埋基础损伤识别。实测数据验证结果表明,所提方法对比现有的神经网络模型具有更高识别率,能够对隧道风机预埋基础健康状态进行有效地评估。

Band structure engineered tunneling heterostructures for high-performance visible and near-infrared photodetection

Tunneling heterostructures are emerging as a versatile architecture for photodetection due to their advanced optical sensitivity,tailorable detection band,and wellbalanced photoelectric performances.However,the existing tunneling heterostructures are mainly operated in the visible wavelengths and have been rarely investigated for the nearinfrared detection.Herein,we report the design and realization of a novel broken-gap tunneling heterostructure by combining WSe2 and Bi2Se3,which is able to realize the simultaneous visible and near-infrared detection because of the complementary bandgaps of WSe2 and Bi2Se3(1.46 and 0.3 e V respectively).Thanks to the realigned band structure,the heterostructure shows an ultralow dark current below picoampere and a high tunneling-dominated photocurrent.The photodetector based on our tunneling heterostructure exhibits a superior specific detectivity of 7.9×1012Jones for a visible incident of 532 nm and 2.2×1010Jones for a 1456 nm nearinfrared illumination.Our study demonstrates a new band structure engineering avenue for the construction of van der Waals tunneling heterostructures for high-performance wide band photodetection.

洞体应变对高频气压波响应的传递函数——以陕西宁强台为例

自2011年观测以来,陕西宁强台洞体应变的高频气压效应甚为显著,但其频率依存性至今尚不明晰。为此,本文尝试采用相干函数和传递函数等方法,对该台2019年1月1日—4月2日的洞体应变和气压数据进行了系统诊断。结果表明,在8~40cpd频段内,洞体应变对气压具有较强的频率依赖性,即气压系数和相移均会随频率的变化而呈现非线性变化,其中,最大气压系数为7.80×10^(-9)/hPa,相位超前可达108.27°,且NS和EW分量的气压响应有所差异。上述结果将有助于该台高频噪声的物理溯源,同时还能为高频气压效应的分频段改正等提供量化依据。

Visualizing interface states in In_(2)Se_(3)–WSe_(2)monolayer lateral heterostructures

Recent findings of two-dimensional(2D)ferroelectric(FE)materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness.In this paper,we report the in-situ fabrication and probing of electronic structures of In_(2)Se_(3)–WSe_(2) lateral heterostructures,compared with most vertical FE heterostructures at present.Through molecular beam epitaxy,we fabricated lateral heterostructures with monolayer WSe_2(three atomic layers)and monolayer In_(2)Se_(3)(five atomic layers).Type-Ⅱband alignment was found to exist in either the lateral heterostructure composed of anti-FEβ′-In_(2)Se_(3) and WSe_(2) or the lateral heterostructure composed of FEβ*-In_(2)Se_(3)and WSe_2,and the band offsets could be modulated by ferroelectric polarization.More interestingly,interface states in both lateral heterostructures acted as narrow gap quantum wires,and the band gap of the interface state in theβ*-In_(2)Se_(3)–WSe_(2)heterostructure was smaller than that in theβ′-In_(2)Se_(3)heterostructure.The fabrication of 2D FE heterostructure and the modulation of interface state provide a new platform for the development of FE devices.

高低肖特基势垒无掺杂隧道场效应晶体管研究

基于高低肖特基势垒机理提出一种无掺杂的隧道场效应晶体管HLSB-TFET。该器件只需要一个具有独立电源的栅电极且无需掺杂。在源极与中间硅区导带之间形成高肖特基势垒,用来产生隧道效应作为正向导通机制;在漏极与中间硅区导带之间形成低肖特基势垒,用于防止由热离子发射引起的空穴。所提出的HLSB-TFET对空穴具有自然的阻挡效应,不会随着漏极到源极电压的增加而显著降低。经过仿真验证,该器件的亚阈值摆幅较低,反向漏电与静态功耗均较小,体现出较高的应用优势。

Discussion on the Electron and Hole Effective Masses in Thermal Silicon

This review and research study provides conclusive discussion on the electron and hole effective masses in thermal silicon dioxide placing their values at 0.42m and 0.58m,where m is the free electron mass,correct to two decimal places.Only one of the masses needs to be determined as the electron and hole masses in materials add up to be equal to free electron mass with the hole effective mass being larger than the electron effective mass.The review also convinces the reader that the CBO(conduction band offset)or the Si-SiO2 barrier height at the oxide/silicon interface of a Si MOS(metal-oxide-semiconductor)device is 3.20 eV.

Comparison of band-to-band tunneling models in Si and Si–Ge junctions

We compared several different band-to-band tunneling （BTBT） models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si-Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si-Ge hetero-junctions, there were significant differences among these models at high reverse biases （over 2 V）. Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si-Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge.

环境净化功能(Ce,Ag)/TiO_2纳米材料表面能带结构的研究

用扫描隧道显微镜 /扫描隧道谱 (STM /STS)技术 ,研究 (Ce ,Ag) /TiO2 纳米光催化材料的表面能带结构 .结果表明 :在纳米TiO2 中加入稀土元素和银制备的 (Ce ,Ag) /TiO2 光催化纳米材料TiO2 的表面禁带宽度可由 2 .9eV降到 2 .4eV ,而且增加了新能级Ecb=-1.0eV ,Evb=0 .9eV ,Eg=1.9eV 。