提出了一种分析多层印刷电路板电源分配网络(power distribution network,PDN)中一维(1D)介质型电磁带隙(electromagnetic band-gap,EBG)结构噪声隔离性能的1D有限元数值计算方法.将1D介质型EBG的3D结构简化为1D有限元模型,通过直接求...提出了一种分析多层印刷电路板电源分配网络(power distribution network,PDN)中一维(1D)介质型电磁带隙(electromagnetic band-gap,EBG)结构噪声隔离性能的1D有限元数值计算方法.将1D介质型EBG的3D结构简化为1D有限元模型,通过直接求解波动方程获得传输系数T、反射系数R以及散射参数S.利用R-T曲线可直观地判定频率禁带,而采用分贝表示的S21参数则更方便评价噪声隔离度.根据介质型EBG的周期数、介电常数和周期长度等参数对噪声隔离性能影响的仿真结果,针对少周期、不完全禁带EBG结构提出了先采用多周期EBG结构预测禁带,再通过调整介电常数和周期长度扩展禁带和增强噪声隔离度的两阶段设计方法.采用3D全波电磁仿真验证了1D有限元算法的合理性.展开更多
This work demonstrates the design of a single band Electromagnetic Band Gap(EBG)antenna by employing an open stub EBG microstrip of a patch antenna for better achievements in terms of its performance to be utilized in...This work demonstrates the design of a single band Electromagnetic Band Gap(EBG)antenna by employing an open stub EBG microstrip of a patch antenna for better achievements in terms of its performance to be utilized in a reconfigurable harvester to operate over a wide input power range.The EBG antenna has been used to gather RF energy and a FET-transistor has been obtain-able to determine and control the powerflow with the intention to operate at the same time for a different level of input power.The measured data of the EBG antenna shows a directivity of 8.52 dBi,a gain of 7.18 dBi,a return loss of-27 dB with a radiation efficiency of 84.3%,showing a clear enhancement in directivity,peak realized gain,and radiation efficiency by 41.76%,25.61%,and 17.12%respectively compared with a regular reference antenna;without utilized the EBG structure.Moreover,the harvester design accomplishes 40%of RF-DC power conversion efficiency over a wide dynamic input power range from-15 to 27 dBm,and its peak is around 78%.The harvester is designed to work at the ISM band for 915 MHz and is suitable for Wireless Power Transfer(WPT)uses.展开更多
In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
文摘提出了一种分析多层印刷电路板电源分配网络(power distribution network,PDN)中一维(1D)介质型电磁带隙(electromagnetic band-gap,EBG)结构噪声隔离性能的1D有限元数值计算方法.将1D介质型EBG的3D结构简化为1D有限元模型,通过直接求解波动方程获得传输系数T、反射系数R以及散射参数S.利用R-T曲线可直观地判定频率禁带,而采用分贝表示的S21参数则更方便评价噪声隔离度.根据介质型EBG的周期数、介电常数和周期长度等参数对噪声隔离性能影响的仿真结果,针对少周期、不完全禁带EBG结构提出了先采用多周期EBG结构预测禁带,再通过调整介电常数和周期长度扩展禁带和增强噪声隔离度的两阶段设计方法.采用3D全波电磁仿真验证了1D有限元算法的合理性.
基金The authors gratefully acknowledge Qassim University,represented by the Deanship of Scientific Research,on the financial support for this research under the number(10262-qec-2020-1-3-I)the academic year 1441 AH/2020 AD.
文摘This work demonstrates the design of a single band Electromagnetic Band Gap(EBG)antenna by employing an open stub EBG microstrip of a patch antenna for better achievements in terms of its performance to be utilized in a reconfigurable harvester to operate over a wide input power range.The EBG antenna has been used to gather RF energy and a FET-transistor has been obtain-able to determine and control the powerflow with the intention to operate at the same time for a different level of input power.The measured data of the EBG antenna shows a directivity of 8.52 dBi,a gain of 7.18 dBi,a return loss of-27 dB with a radiation efficiency of 84.3%,showing a clear enhancement in directivity,peak realized gain,and radiation efficiency by 41.76%,25.61%,and 17.12%respectively compared with a regular reference antenna;without utilized the EBG structure.Moreover,the harvester design accomplishes 40%of RF-DC power conversion efficiency over a wide dynamic input power range from-15 to 27 dBm,and its peak is around 78%.The harvester is designed to work at the ISM band for 915 MHz and is suitable for Wireless Power Transfer(WPT)uses.
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
