Flexural wave band-gaps in phononic metamaterial beam with hybrid shunting circuits

Periodic arrays of hybrid-shunted piezoelectric patches are used to control the band-gaps of phononic metamaterial beams. Passive resistive-inductive （RL） shunting circuits can produce a narrow resonant band-gap （RG）, and active negative capacitive （NC） shunting circuits can broaden the Bragg band-gaps （BGs）. In this article, active NC shunting circuits and passive resonant RL shunting circuits are connected to the same piezoelectric patches in parallel, which are usually called hybrid shunting circuits, to control the location and the extent of the band-gaps. A super-wide coupled band-gap is generated when the coupling between RG and the BG occurs. The attenuation constant of the infinite periodic structure is predicted by the transfer matrix method, which is compared with the vibration transmittance of a finite periodic structure calculated by the finite element method. Numerical results show that the hybrid-shunting circuits can make the band-gaps wider by appropriately selecting the inductances, negative capacitances, and resistances.

Analysis of Light Load Efficiency Characteristics of a Dual Active Bridge Converter Using Wide Band-Gap Devices

In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (Co,tr) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low Co,tr operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.

Excitation of defect modes from the extended photonic band-gap structures of 1D photonic lattices

This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes （DMs） can be regarded as Bloch modes which are excited from the extended photonie band-gap structure at Bloch wave-numbers with kx = 0. The DMs for both positive and negative defects are considered in this method.

Doping Induced Tailoring in the Morphology,Band-Gap and Ferromagnetic Properties of Biocompatible ZnO Nanowires, Nanorods and Nanoparticles

The modification of nanostructured materials is of great interest due to controllable and unusual inherent properties in such materials. Single phase Fe doped Zn O nanostructures have been fabricated through simple, versatile and quick low temperature solution route with reproducible results. The amount of Fe dopant is found to play a significant role for the growth of crystal dimension. The effect of changes in the morphology can be obviously observed in the structural and micro-structural investigations, which may be due to a driving force induced by dipole-dipole interaction. The band gap of Zn O nanostructures is highly shifted towards the visible range with increase of Fe contents, while ferromagnetic properties have been significantly improved.The prepared nanostructures have been found to be nontoxic to SH-SY5 Y Cells. The present study clearly indicates that the Fe doping provides an effective way of tailoring the crystal dimension, optical band-gap and ferromagnetic properties of Zn O nanostructure-materials with nontoxic nature, which make them potential for visible light activated photocatalyst to overcome environmental pollution, fabricate spintronics devices and biosafe drug delivery agent.

Tuning of band-gap of phononic crystals with initial confining pressure

The mechanism of the shift of the band-gap in phononic crystal （PC） with different initial confining pressures is studied experimentally and numerically. The experimental results and numerical analysis simultaneously indicate that the confining pressure can efficiently tune the location in and the width of the band-gap. The present work provides a basis for tuning the band-gap of phononic crystal in engineering applications.

Theoretical investigation of band-gap and mode characteristics of anti-resonance guiding photonic crystal fibres

With the full-vector plane-wave method （FVPWM） and the full-vector beam propagation method （FVBPM）, the dependences of the band-gap and mode characteristics on material index and cladding structure parameter in anti- resonance guiding photonic crystal fibres （ARGPCFs） are sufficiently analysed. An ARGPCF operating in the near- infrared wavelength is shown. The influences of the high index cylinders, glass interstitial apexes and silica structure on the characteristics of band-gaps and modes are deeply investigated. The equivalent planar waveguide theory is used for analysing such an ARGPCF filled by the isotropic materials, and the resonance and the anti-resonance characteristics r：~n h~ w~｜] r^r~dlrtpd

Energy Band-gap Calculation of d-Ta_2O_5 Using sX-LDA and B3LYP Methods

The energy band-gap and related factors of tantalum pentoxide with hexagonal phase were investigated using hybrid functional B3LYP and sX-LDA methods. The results showed that both sX-LDA and B3LYP techniques reveal the indirect semiconductor nature of δ-Ta2O5, whereas the obtained value of energy band-gap is much higher than previous theoretical reports but closer to the experimental data. The optical band- gap of δ-Ta2O5 is expected to originate from the O 2p→Ta 5d transition which may benefit from the d-s-p hybridization.

Modification of Optical Band-Gap of Si Films After Ion Irradiation

Amorphous silicon （a-Si）, nanocrystalline silicon （nc-Si） and hydrogenated nanocrys- talline silicon （nc-Si：H） films were fabricated by using chemical vapor deposition （CVD） system. The a-Si and nc-Si thin films were irradiated with 94 MeV Xe-ions at fluences of 1.0 × 10^11 ions/cm2, 1.0 × 10^12 ions/cm^2 and 1.0 × 10^13 ions/era2 at room temperature （RT）. The nc-Si：H films were irradiated with 9 MeV Xe-ions at 1.0 ×10^12 Xe/cm^2, 1.0 × 10^13 Xe/cm2 and 1.0×10^14 Xe/cm2 at RT. For comparison, mono-crystalline silicon （c-Si） samples were also irradiated at RT with 94 MeV Xe-ions. All samples were analyzed by using an UV/VIS/NIR spectrometer and an X-ray powder diffractometer. Variations of the optical band-gap （Eg） and grain size （D） versus the irradiation fluence were investigated systematically. The obtained results showed that the optical band-gaps and grain size of the thin films changed dramatically whereas no observable change was found in c-Si samples after Xe-ion irradiation. Possible mechanism underlying the modification of silicon thin films was briefly discussed.

Investigation of the guided-mode characteristics of hollow-core photonic band-gap fibre with interstitial holes

This paper investigates the guided-mode characteristics of hollow-core photonic band-gap fibre （HC-PBGF） with interstitial holes fabricated by an improved twice stack-and-draw technique at visible wavelengths. Based on the simulation model with interstitial holes, the influence of glass interstitial apexes on photonic band-gaps is discussed. The existing forms of guided-mode in part band gaps are shown by using the full-vector plane-wave method. In the experiment, the observed transmission spectrum corresponds to the part band gaps obtained by simulation. The fundamental and second-order guided-modes with mixture of yellow and green light are observed through choosing appropriate fibre length and adjusting coupling device. The loss mechanism of guided-modes in HC-PBGF is also discussed.

Synthesis and Characterization of Small Band-gap Conjugated Polymers - Poly(pyrrolyl methines)

A kind of small band-gap conjugated polymers-poly (pyrrolyl methines) and their precursors-(poly pyrrolyl methanes) have been synthesized by a simple method and characterized by 1HNMR, FT-IR, TGA and UV-Vis. These polymers can be dissolved in high polar solvents such as DMSO, DMF or NMP. The results reveals that the band-gap of the synthesized conjugated polymers are in the range of 0.96~1.14 eV and they all belong to the small band-gap polymers. The conductivity of doped products with iodine is in the range of semiconductor.

A band-gap voltage reference for interface circuit of microsensor

A high performance CMOS band-gap voltage reference circuit that can be used in interface integrated circuit of microsensor and compatible with 0. 6 μm ( double poly) mix process is proposed in this paper. The circuit can be employed in the range of 1. 8 - 8 V and carry out the first-order PTAT ( proportional to absolute temperature) temperature compensation. Through using a two-stage op-amp with a NMOS input pair as a negative feedback op-amp,the PSRR ( power supply rejection ratio) of the entire circuit is increased,and the temperature coefficient of reference voltage is decreased. Results from HSPICE simulation show that the PSRR is - 72. 76 dB in the condition of low-frequency,the temperature coefficient is 2. 4 × 10 -6 in the temperature range from - 10 ℃ to 90 ℃ and the power dissipation is only 14 μW when the supply voltage is 1. 8 V.

The Propagation, Excitation and Coupling of Acoustic Waves in Phonon Band-gap Materials

Acoustic wave exhibits inherently different characters of propagation, excitation and coupling in phonon band-gap materials in which its elastic, piezoelectric constants are modulated in order of acoustic wavelength. These kinds of novel materials were exampled by phononic crystals with elastic constants modulation, acoustic superlattice and ionic-type phononic crystals with piezoelectric constants modulation. In this talk, phonic crystals were constructed with steel rods embedded in air. Negative refraction of acoustic wave was both experimentally and theoretically established in the phononic crystals. The propagation of acoustic wave in the crystals show acoustic band structures because the waves are strong scattered at the Brillouin Zone Boundaries, analogy to electron band structure in real crystals and photonic band structure in photonic crystals. In the acoustic superlattice, ultrasonic waves could be excited by applied alternative electric fields by piezoelectric effect. The frequency, mode and amplitude of the excited wave are determined by the microstructured parameters of the acoustic superlattice at the condition of phase matching. Ionic-type phononic crystals describe the coupling between superlattice phonon and electromagnetic wave. The coupling process resulted in the polariton with a dispersion relation totally different from that of both superlattice phonon and E-M waves, analogy to the polariton of the ionic crystals but in microwave instead of infrared light. These microstructural dielectric materials show artificial abnormal properties and will find novel application in ultrasonic devices and microwave devices.

Nonlinear wave propagation in acoustic metamaterials with bilinear nonlinearity

Nonlinear phononic crystals have attracted great interest because of their unique properties absent in linear phononic crystals.However,few researches have considered the bilinear nonlinearity as well as its consequences in acoustic metamaterials.Hence,we introduce bilinear nonlinearity into acoustic metamaterials,and investigate the propagation behaviors of the fundamental and the second harmonic waves in the nonlinear acoustic metamaterials by discretization method,revealing the influence of the system parameters.Furthermore,we investigate the influence of partially periodic nonlinear acoustic metamaterials on the second harmonic wave propagation,and the results suggest that pass-band and band-gap can be transformed into each other under certain conditions.Our findings could be beneficial to the band gap control in nonlinear acoustic metamaterials.

A Novel Woodpile Three-Dimensional Terahertz Photonic Crystal

A novel woodpile lattice structure is proposed. Based on plane wave expansion （PWE） method, the complete photonic band gaps （PBGs） of the novel woodpile three^dimensional （3D） terahertz （THz） photonic crystal （PC） with a decreasing symmetry relative to a face-centred-tetragonal （fct） symmetry are optimized by varying some structural parameters and the highest band gap ratio can reach 27.61%. Compared to the traditional woodpile lattice, the novel woodpile lattice has a wider range of the filling ratios to gain high quality PBGs, which provides greater convenience for the manufacturing process. The novel woodpile 3D PC will be very promising for materials of THz Junctional components.

波导缝隙天线的EBG的应用

研究一种新型的EBG结构在波导缝隙天线中的应用。这种新型的EBG具有可以有效抑制表面波的特性,提出了在阵面缝隙单元间加载EBG周期单元结构的方案,抑制波导缝隙天线之间的互耦。通过与传统的波导缝隙天线进行比较得出加载新型EBG结构的波导缝隙天线在互耦上有很大改善。

Spatially Inhomogeneous Gain Modification in Photonic Crystals

The electric and magnetic energy distributions in photonic crystals （PC） are calculated by using the plane wave expansion （PWE） method. Even though the total electric and magnetic energy in each unit cell of photonic crystals are equal to each other, the ratio of electric and magnetic energy densities varies depending on the local position. Based on Fermi＇s golden rule, the optical gain is analysed in the full quantum framework that takes the nonuniform energy density ratio into account. This nonuniform energy density ratio in photonic crystals, defined in an equal form as gain modification factor, leads to spatially inhomogeneous modification of optical gain. Results reported in the paper provide a new perspective for analysing gain characteristics, as well as the lasing properties, in photonic crystals.

Growth and Characterization of InN Thin Films on Sapphire by MOCVD

Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition （MOCVD） By employing three-step layer buffers, the mirror-like layers on two-inch sapphire wafers have been obtained. The structural, optical and electrical characteristics of InN are investigated by x-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence and infrared optical absorption. The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70eV at room temperature. The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm^2 /Vs, and 3.9 × 1018cm^-3, respectively.

A NOVEL COMPACT HIS-EBG STRUCTURE AND ITS APPLICATION IN REDUCTION OF PRINTED ANTENNA MUTUAL COUPLING

Anovel compact E shape High Impedance Surface(HIS) Electromagnetic Band-Gap(EBG) comprising Amended Minkowski Fractal Boundary(AMFB),Added Metal Strips(AMS),and metal plated via printed on a Rogers TMM 10i substrate is presented.The first order AMFB and ABS are introduced for equivalent capacitance enhancement and miniaturization with effective space-filling characteristics.The dimension of lattice size is only The proposed structure exhibits a most compact characteristic about 35% size reduction as compared with conven-tional mushroom-like HIS-EBG,and better surface-wave decoupling of around 9 dB at the operating frequency band.Details of design parameters which affect the whole performance of certain band-gap are intensively investigated.A constructed prototype is potential candidate for antenna system per-formance enhancement.

First-principles investigation of BAs and B_xGa_(1-x)As alloys

First-principles investigation of BAs and BxGa1-xAs alloys Using first-principles calculations in the generalized gradient approximation, the electronic properties of BAs and BxGa1-xAs alloys are studied. At the Brillouin-zone centre, the lowest conduction band is the three-degenerate p-like Г15c state rather than s-like Г1c state, and the conduction band minimum （CBM） is along the A line between the Г and X points-at approximately 11/14（1,0,0）2π/a. With boron content at 0%-18.75%, BxGa1-xAs alloys have a small （2.6 eV） and relatively composition-independent band-gap bowing parameter, the band-gap increases monotonically by -18meV/B% with increasing boron content. In addition, the formation enthalpies of mixing for BxGa1-xAs alloys with boron content at 6.25% and 12.5% are calculated, and the large formation enthalpies may explain the difficulty in alloying boron to GaAs.

Optical Properties of Blue-Emitting BaAl_2S_4:Eu Thin-Films for Inorganic EL Display

The optical properties of blue emitting BaAl2S4:Eu thin-films were studied. The emission peak is around 470 nm, whose FWHM (full width at half maximum) is 35 nm. The dielectric constant is 3.03 from transmission spectrum, and the optical band gap is approximately 4.6 eV. It is found that the cubic phase and orthorhombic phase exist in fabricated thin-films. Furthermore, the energy band structure of BaAl2S4:Eu thin-films from X-ray photo-electron spectra (XPS) and the absorption spectra were analyzed.