Effect of Cr/Mn segregation on pearlite–martensite banded structure of high carbon bearing steel

The effect of Cr/Mn segregation on the abnormal banded structure of high carbon bearing steel was studied by reheating and hot rolling.With the use of an optical microscope, scanning electron microscope, transmission electron microscope, and electron probe microanalyzer, the segregation characteristics of alloying elements in cast billet and their relationship with hot-rolled plate banded structure were revealed.The formation causes of an abnormal banded structure and the elimination methods were analyzed.Results indicate the serious positive segregation of C, Cr, and Mn alloy elements in the billet.Even distribution of Cr/Mn elements could not be achieved after 10 h of heat preservation at 1200℃, and the spacing of the element aggregation area increased, but the segregation index of alloy elements decreased.Obvious alloying element segregation characteristics are present in the banded structure of the hot-rolled plate.This distinct white band is composed of martensitic phases.The formation of this abnormal pearlite–martensite banded structure is due to the interaction between the undercooled austenite transformation behavior of hot-rolled metal and the segregation of its alloying elements.Under the air cooling after rolling, controlling the segregation index of alloy elements can reduce or eliminate the abnormal banded structure.

The mechanism of the banded structure of drifting macroalgae in the Yellow Sea

At the end of May 2008,a massive bloom of macroalgae occurred in the western Yellow Sea off China and lasted for nearly two months,and annual blooms have occurred since then on. During bloom period,the surface-drifting macroalgae have showed an interesting pattern dominated by a banded structure,and the distance between neighboring bands ranged from hundreds of meters to about 6 km with a peak at 1–1.5 km,which is an order of higher than the scale of Langmuir circulation of 50–100 m. In order to explain this new phenomenon,ocean current data obtained from a Doppler current profiler off Qingdao was used to implement stability analysis. By numerically solving the resulting differential Orr-Sommerfeld equation,the secondary circulation induced from the instability of the Emkan current was found to fit well with the observed spatial scale of the surface-drifting macroalgae’s banded structure. As the wind driven Emkan current exist universally in the global ocean,it is reasonable to conclude that the banded structure with kilometers distance between adjoining bands is ubiquitous. We found a new circulation in the upper ocean which is important for exchange of energy,materials and gas between the upper ocean and subsurface layer.

Banded structure control of low carbon microalloyed steel based on oxide metallurgy

Banded structure is a common harmful microstructure for low carbon microalloyed steel,which seriously shortens the service life of processed parts.In order to study the effect of oxide metallurgy on improving banded structure,the Ti-Zr deoxidized low carbon microalloyed steel that can play the oxide metallurgical role of inclusion was chosen as the research object,and the inclusion characteristics,microstructure and transverse and longitudinal mechanical properties after hot rolling were analyzed.The results showed the inclusion number density increased in all experimental steels after hot rolling,and a large number of long strip inclusions with aspect ratio greater than 3 appeared along the rolling direction.In addition,after hot rolling,there were element segregation bands in the experimental steels,and granular bainite bands were formed in the element enrichment zone.However,the intragranular ferrite generated in the cooling process destroyed the continuity of granular bainite bands,so that the microstructure anisotropy indexes of experimental steels were small.The mechanical properties analysis showed that the anisotropy of performance was mainly reflected in plasticity and toughness in the experimental steels.Among them,the difference ratio of elongation,section shrinkage and impact energy of No.2 steel was 1.69%,3.87% and 1.69%,respectively,which were less than those of No.1 steel and No.3 steel.The anisotropy of microstructure and mechanical properties of No.2 steel that full played the role of oxide metallurgy were improved,and the banded structure control of low carbon microalloyed steel can be realized by oxide metallurgy technology.

Band structures of strained kagome lattices

Materials with kagome lattices have attracted significant research attention due to their nontrivial features in energy bands.We theoretically investigate the evolution of electronic band structures of kagome lattices in response to uniaxial strain using both a tight-binding model and an antidot model based on a periodic muffin-tin potential.It is found that the Dirac points move with applied strain.Furthermore,the flat band of unstrained kagome lattices is found to develop into a highly anisotropic shape under a stretching strain along y direction,forming a partially flat band with a region dispersionless along ky direction while dispersive along kx direction.Our results shed light on the possibility of engineering the electronic band structures of kagome materials by mechanical strain.

Intermetallic Compounds in the Banded Structure and Their Effect on Mechanical Properties of Al/Mg Dissimilar Friction Stir Welding Joints

Dissimilar friction stir welding(FSW) between aluminum and magnesium alloy was performed, using various tool rotational speed(TRS) at a ?xed travel speed, with tool offset to aluminum to investigate the formation of intermetallic compounds(IMCs) in the banded structure(BS) zone and their effect on mechanical properties. Large quantities of IMCs, in the form of alternating bands of particles or lamellae, were found in the BS zone, where drastic material intermixing occurred during FSW. The BS microstructural characters in terms of the morphology of the bands and the quantity and distribution of IMC particles varied with TRS. All welds exhibited brittle fracture mode with their fracture paths propagating mainly in/along the IMCs in the BS. It is shown that these BS microstructural characters have signi?cant effect on the mechanical properties of the joints. Suggestions on tailoring the BS microstructure were proposed for improving the strength of the BS zone and the ?nal mechanical properties of the Al/Mg FSW joints.

Limited Memory BFGS Method for Least Squares Semidefinite Programming with Banded Structure

This work is intended to solve the least squares semidefinite program with a banded structure. A limited memory BFGS method is presented to solve this structured program of high dimension.In the algorithm, the inverse power iteration and orthogonal iteration are employed to calculate partial eigenvectors instead of full decomposition of n × n matrices. One key feature of the algorithm is that it is proved to be globally convergent under inexact gradient information. Preliminary numerical results indicate that the proposed algorithm is comparable with the inexact smoothing Newton method on some large instances of the structured problem.

Surface plasmon assisted high-performance photodetectors based on hybrid TiO_(2)@GaO_(x)N_(y)-Ag heterostructure

In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag heterostructure.Ag particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction device.At 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 nm.The rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,respectively.Uniquely,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other heterojunctions.The excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination rate.It is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric measurements.The TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.

Optimizing band structure of CoP nanoparticles via rich-defect carbon shell toward bifunctional electrocatalysts for overall water splitting

Transition-metal phosphides(TMPs)with high catalytic activity are widely used in the design of electrodes for water splitting.However,a major challenge is how to achieve the trade-off between activity and stability of TMPs.Herein,a novel method for synthesizing CoP nanoparticles encapsu-lated in a rich-defect carbon shell(CoP/DCS)is developed through the self-assembly of modified polycyclic aromatic molecules.The graft and removal of high-activity C-N bonds of aromatic molecules render the controllable design of crystallite defects of carbon shell.The density functional theory calculation indicates that the carbon defects with unpaired electrons could effectively tailor the band structure of CoP.Benefiting from the improved activity and corrosion resistance,the CoP/DCS delivers outstanding difunctional hydrogen evolution reaction(88 mV)and oxygen evolution reaction(251 mV)performances at 10 mA cm^(−2)current density.Furthermore,the coupled water electrolyzer with CoP/DCS as both the cathode and anode presents ultralow cell voltages of 1.49 V to achieve 10 mA cm^(−2)with long-time stability.This strategy to improve TMPs electrocatalyst with rich-DCS and heterogeneous structure will inspire the design of other transition metal compound electrocatalysts for water splitting.

Decade Milestone Advancement of Defect-Engineered g-C_(3)N_(4) for Solar Catalytic Applications

Over the past decade, graphitic carbon nitride(g-C_(3)N_(4)) has emerged as a universal photocatalyst toward various sustainable carbo-neutral technologies. Despite solar applications discrepancy, g-C_(3)N_(4) is still confronted with a general fatal issue of insufficient supply of thermodynamically active photocarriers due to its inferior solar harvesting ability and sluggish charge transfer dynamics. Fortunately, this could be significantly alleviated by the “all-in-one” defect engineering strategy, which enables a simultaneous amelioration of both textural uniqueness and intrinsic electronic band structures. To this end, we have summarized an unprecedently comprehensive discussion on defect controls including the vacancy/non-metallic dopant creation with optimized electronic band structure and electronic density, metallic doping with ultraactive coordinated environment(M–N_(x), M–C_(2)N_(2), M–O bonding), functional group grafting with optimized band structure, and promoted crystallinity with extended conjugation π system with weakened interlayered van der Waals interaction. Among them, the defect states induced by various defect types such as N vacancy, P/S/halogen dopants, and cyano group in boosting solar harvesting and accelerating photocarrier transfer have also been emphasized. More importantly, the shallow defect traps identified by femtosecond transient absorption spectra(fs-TAS) have also been highlighted. It is believed that this review would pave the way for future readers with a unique insight into a more precise defective g-C_(3)N_(4) “customization”, motivating more profound thinking and flourishing research outputs on g-C_(3)N_(4)-based photocatalysis.

Negative magnetoresistance in the antiferromagnetic semimetal V_(1/3)TaS_(2)

Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

Band structure engineering in metal halide perovskite nanostructures for optoelectronic applications

Metal halide perovskite nanostructures have emerged as low-dimensional semiconductors of great significance in many fields such as photovoltaics,photonics,and optoelectronics.Extensive efforts on the controlled synthesis of perovskite nanostructures have been made towards potential device applications.The engineering of their band structures holds great promise in the rational tuning of the electronic and optical properties of perovskite nanostructures,which is one of the keys to achieving efficient and multifunctional optoelectronic devices.In this article,we summarize recent advances in band structure engineering of perovskite nanostructures.A survey of bandgap engineering of nanostructured perovskites is firstly presented from the aspects of dimensionality tailoring,compositional substitution,phase segregation and transition,as well as strain and pressure stimuli.The strategies of electronic doping are then reviewed,including defect-induced self-doping,inorganic or organic molecules-based chemical doping,and modification by metal ions or nanostructures.Based on the bandgap engineering and electronic doping,discussions on engineering energy band alignments in perovskite nanostructures are provided for building high-performance perovskite p-n junctions and heterostructures.At last,we provide our perspectives in engineering band structures of perovskite nanostructures towards future low-energy optoelectronics technologies.

Impact of EBG Structures' Positions on the Performance of an EBG Antenna

Six circularly polarized patch antennas with electromagnetic band gap(EBG)arranged at different locations were studied.These EBG antennas were compared in terms of impedance bandwidth,axial ratio(AR)bandwidth and radiation patterns.When the EBG cells were placed closer to the edge of the substrate,the EBG antenna had a larger front radiation and a narrower bandwidth.Integrating the EBG cells closer to the center of the patch resulted in a wider impedance bandwidth,a wider axial ratio bandwidth and a decreased front gain.

Band structure calculations of in-plane waves in two-dimensional phononic crystals based on generalized multipole technique

A numerical method, the so-called multiple monopole(MMoP) method,based on the generalized multipole technique(GMT) is proposed to calculate the band structures of in-plane waves in two-dimensional phononic crystals, which are composed of arbitrarily shaped cylinders embedded in a solid host medium. To find the eigenvalues(eigenfrequencies) of the problem, besides the sources used to expand the wave fields, an extra monopole source is introduced which acts as the external excitation. By varying the excitation frequency, the eigenvalues can be localized as the extreme points of an appropriately chosen function. By sweeping the frequency range of interest and the boundary of the irreducible first Brillouin zone(FBZ), the band structures can be obtained. Some typical numerical examples with different acoustic impedance ratios and with inclusions of various shapes are presented to validate the proposed method.

The Electronic and Optical Properties of Vertically Stacked GaN-WS_(2) Heterostructure

The electronic structure and optical property of stacked GaN-WS_(2)heterostructure are explored with HSE06 calculation based on density functional theory.The direct band gap of GaN-WS_(2)heterostructure is 1.993 eV,which is obviously a type-II band alignment semiconductor.Furthermore,the optical property of GaN-WS_(2)heterostructure such as absorption coefficient is analyzed.These new findings enable GaN-WS_(2)heterostructure to be promising candidates for photovoltaic cells and electronic devices in visible light.

Density functional theory analysis of electronic structure and optical properties of La-doped Cd_2SnO_4 transparent conducting oxide

The electronic structural, effective masses of carriers, and optical properties of pure and La-doped Cd_2SnO_4 are calculated by using the first-principles method based on the density functional theory. Using the GGA+U method, we show that Cd_2SnO_4 is a direct band-gap semiconductor with a band gap of 2.216 eV, the band gap decreases to 2.02 e V and the Fermi energy level moves to the conduction band after La doping. The density of states of Cd_2SnO_4 shows that the bottom of the conduction band is composed of Cd 5 s, Sn 5 s, and Sn 5 p orbits, the top of the valence band is composed of Cd 4d and O 2p, and the La 5 d orbital is hybridized with the O 2 p orbital, which plays a key role at the conduction band bottom after La doping. The effective masses at the conduction band bottom of pure and La-doped Cd_2SnO_4 are 0.18 m0 and 0.092 m_0, respectively, which indicates that the electrical conductivity of Cd_2SnO_4 after La doping is improved. The calculated optical properties show that the optical transmittance of La-doped Cd_2SnO_4 is 92%, the optical absorption edge is slightly blue shifted, and the optical band gap is increased to 3.263 eV. All the results indicate that the conductivity and optical transmittance of Cd_2SnO_4 can be improved by doping La.

Progress on band structure engineering of twisted bilayer and two-dimensional moiré heterostructures

Artificially constructed van der Waals heterostructures(vdWHs)provide an ideal platform for realizing emerging quantum phenomena in condensed matter physics.Two methods for building vdWHs have been developed:stacking two-dimensional(2D)materials into a bilayer structure with different lattice constants,or with different orientations.The interlayer coupling stemming from commensurate or incommensurate superlattice pattern plays an important role in vdWHs for modulating the band structures and generating new electronic states.In this article,we review a series of novel quantum states discovered in two model vdWH systems—graphene/hexagonal boron nitride(hBN)hetero-bilayer and twisted bilayer graphene(tBLG),and discuss how the electronic structures are modified by such stacking and twisting.We also provide perspectives for future studies on hetero-bilayer materials,from which an expansion of 2D material phase library is expected.

Determination of Band Structure of Gallium-Arsenide and Aluminium-Arsenide Using Density Functional Theory

This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHIAIMS) code based on numerical atomic-centered orbital basis sets. The electronic band structure, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computational time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is -114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs. This indicates that GaAs can exhibit high transport property of the electron in the semiconductor which makes it suitable for optoelectronics devices while the wider band gap of AlAs indicates their potentials can be used in high temperature and strong electric fields device applications. The results reveal a good agreement within reasonable acceptable errors when compared with the theoretical and experimental values obtained in the work of Federico and Yin wang [1] [2].

Electronic Band Structure and Heat Capacity Calculation of Some TlX (X = Sb, Bi) Compounds

The tight binding linear muffin-tin-orbital (TB-LMTO) method within the local density approximation (LDA) has been used to calculate structural and electronic properties of thallium pnictides TlX (X = Sb, Bi). As a function of volume, the total energy is evaluated. Apart from this, equilibrium lattice parameter, bulk modulus, first order derivative, electronic and lattice heat co-efficient, Debye temperature and Grüneisen constants, band structure and density of states are calculated. From energy band diagram, we observed metallic behaviour in TlSb and TlBi compounds. The equilibrium lattice constants agreed well with the available data.

Na Induced Changes in the Electronic Band Structure of Graphene Grown on C-Face SiC

Studies of the effects induced on the electron band structure after Na deposition, and subsequent heating, on a C-face 2 MLs graphene sample are reported. Na deposition shifts the Dirac point downwards from the Fermi level by about 0.5 eV due to electron doping. After heating at temperatures from around 120℃ to 300℃,thep-band appears considerably broadened. Collected Si 2p and Na 2p spectra then indicate Na intercalation in between the graphene layers and at the graphene SiC interface. The broadening is therefore interpreted to arise from the presence of two slightly shifted, but not clearly resolved,p-bands. Constant energy photoelectron distribution patterns, E(kx,ky);s, extracted from the clean 2MLs graphene C-face sample look very similar to earlier calculated distribution patterns for monolayer, but not Bernal stacked bilayer, graphene. After Na deposition the patterns extracted at energies below the Dirac point appear very similar so the doping had no pronounced effect on the shape or intensity distribution. At energies above the Dirac point the extracted angular distribution patterns show the flipped, “mirrored”, intensity distribution predicted for monolayer graphene at these energies. An additional weaker outer band is also discernable at energies above the Dirac point, which presumably is induced by the deposited Na.

Pressure manipulation of ultrafast carrier dynamics in monolayer WS_(2)

Two-dimensional transition metal dichalcogenides(TMDs)have intriguing physic properties and offer an exciting platform to explore many features that are important for future devices.In this work,we synthesized monolayer WS_(2)as an example to study the optical response with hydrostatic pressure.The Raman results show a continuous tuning of the lattice vibrations that is induced by hydrostatic pressure.We further demonstrate an efficient pressure-induced change of the band structure and carrier dynamics via transient absorption measurements.We found that two time constants can be attributed to the capture process of two kinds of defect states,with the pressure increasing from 0.55 GPa to 2.91 GPa,both of capture processes were accelerated,and there is an inflection point within the pressure range of 1.56 GPa to 1.89 GPa.Our findings provide valuable information for the design of future optoelectronic devices.