Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteri...Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.展开更多
Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport th...Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV （365 nm） responses of surface-contacted ZnO film are provided by I-V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal-seconductor-metal （M-S-M） model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.展开更多
For an all solid-state Marx modulator applied in dielectric barrier discharges（DBDs）,hard switching results in a very low efficiency.In this paper,a series resonant soft switching circuit,which series an inductance ...For an all solid-state Marx modulator applied in dielectric barrier discharges（DBDs）,hard switching results in a very low efficiency.In this paper,a series resonant soft switching circuit,which series an inductance with DBD capacitor,is proposed to reduce the power loss.The power loss of the all circuit status with hard switching was analyzed,and the maximum power loss occurred during discharging at the rising and falling edges.The power loss of the series resonant soft switching circuit was also presented.A comparative analysis of the two circuits determined that the soft switching circuit greatly reduced power loss.The experimental results also demonstrated that the soft switching circuit improved the power transmission efficiency of an all solid-state Marx modulator for DBDs by up to 3 times.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176092 and 61474094)the National Basic Research Program of China(Grant Nos.2012CB933503 and 2012CB632103)the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project(Grant No.11311140251)
文摘Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11274082 and 51172194)the Excellent Young Scientist Research Award Fund of Shandong Province,China(Grant No.BS2011CL002)
文摘Employing a simple and efficient method of electro-chemical anodization, ZnO nanowire films are fabricated on Zn foil, and an ultraviolet （UV） sensor prototype is formed for investigating the electronic transport through back-to-back double junctions. The UV （365 nm） responses of surface-contacted ZnO film are provided by I-V measurement, along with the current evolution process by on/off of UV illumination. In this paper, the back-to-back metal-seconductor-metal （M-S-M） model is used to explain the electronic transport of a ZnO nanowire film based structure. A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage.
基金supported by the Engineering Research Center of Advanced Lighting Technology Ministry of Education
文摘For an all solid-state Marx modulator applied in dielectric barrier discharges（DBDs）,hard switching results in a very low efficiency.In this paper,a series resonant soft switching circuit,which series an inductance with DBD capacitor,is proposed to reduce the power loss.The power loss of the all circuit status with hard switching was analyzed,and the maximum power loss occurred during discharging at the rising and falling edges.The power loss of the series resonant soft switching circuit was also presented.A comparative analysis of the two circuits determined that the soft switching circuit greatly reduced power loss.The experimental results also demonstrated that the soft switching circuit improved the power transmission efficiency of an all solid-state Marx modulator for DBDs by up to 3 times.
