The Immediate Analgesic Effect and Impact on Gait Function of Transcutaneous Electrical Nerve Stimulation in Late-Stage Elderly Individuals with Knee Pain: Examination of Gait Function Using an IoT-Based Gait Analysis Device

Purpose: This study verified the effects of transcutaneous electrical nerve stimulation (TENS), which can be worn during walking and exercise, in elderly individuals with late-stage knee pain who exercise regularly. Methods: Thirty-two late-stage elderly individuals were evaluated for knee pain during rest, walking, and program exercises, with and without TENS. Gait analysis was performed using an IoT-based gait analysis device to examine the effects of TENS-induced analgesia on gait. Results: TENS significantly reduced knee pain during rest, walking, and programmed exercises, with the greatest analgesic effect observed during walking. The greater the knee pain without TENS, the more significant the analgesic effect of TENS. A comparison of gait parameters revealed a significant difference only in the gait cycle time, with a trend towards faster walking with TENS;however, the effect was limited. Conclusion: TENS effectively relieves knee pain in late-stage elderly individuals and can be safely applied during exercise. Pain management using TENS provides important insights into the implementation of exercise therapy in this age group.

Progress in Antimonide Based III-V Compound Semiconductors and Devices

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

Electrochemical Properties of Polypyrrole-Coated Microelectrode Array and the Fabrication of Polypyrrole-Based Microelectronic Devices

Conducting polymers have been studied extensively. An interesting property of the conducting polymer is that the conductivity of some polymers, such as polypyrrolc, polyaniline, poly(3-methylthiophene) etc. , is affected by the voltage applied to them. For polypyrrole, the oxidized state is an electronic conductor and the reduced state is essentially insulating. Using this property, one can fabricate the polymer-based electronic devices. Experimental results of Pickun

The Development of Network based Composite Power quality Regulation Device

First, the paper analyzes the advantages and disadvantages of all kinds of reactive power compensation technology, and then proposes a principle and integrated control strategy of the composite operation of TSC and SVG, also the paper designs and develops the main controller of Network based composite power quality regulation device, based on RTDS, the real-time digital simulation model of The Device is established, and finally the prototype of the device is developed with the function of filter and split-phase compensation. The main controller determines the cooperative operation of both TSC and SVG, and the switching strategy of TSC. The simulation result in RTDS can verify the precision of the measure system and the validity of the control logic, the prototype has finished the type test according to the national standard.

Study on Mesh-Control Device for the Mesh Generator Based on Tree Structures

In this paper, a process of the quadtree mesh generation is described, then a mesh control device of the tree based mesh generators is analyzed in detail. Some examples are given to demonstrate that the mesh control device allows for efficient a priori and a posteriori mesh refinements.

Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

High-Efficiency Green Phosphorescent Organic Light-Emitting Diode Based on Simplified Device Structures

A high-efficiency green phosphorescent organic light emitting diode with a simplified structure is achieved that is free of a hole transport layer. The design of this kind of device structure not only saves the consumption of organic materials but also greatly reduces the structural heterogeneities and effectively facilitates the charge injection into the emissive layer. The resulting green phosphorescent organic light-emitting diodes （PHOLEDs） exhibit higher electroluminescent efficiency. The maximum external quantum efficiency and current efficiency reach 23.7% and 88 cd/A, respectively. Moreover the device demonstrates satisfactory stability, keeping 23.7% and 88cd/A, 22% and 82cd/A, respectively, at a luminance of 100 and 1000cd/m2. The working mechanism for achieving high efficiency based on such a simple device structure is discussed correspondingly. The improved charge carrier injection and transport balance are proved to prominently contribute to achieve the high efficiency and great stability at high luminance in the green PHOLEDs.

The memristive conductance studying of an Au/Ti_nO_(2n-1) memristor device based on oxygen vacancy drifting

With the insight of memristor researsh growing continuously,many semiconductor material has been manufactured to various kinds of memristive device.Yet the stabilization of memristive performance haven’t been fulfilled,the fathom of memristive-acting mechanism still not being generalized.To put a futher move on low-consuming and high-stable memristive conductance device,we built a high stable double-pair-electrode device,based on the fabrication of TiO_(2-x),which has been generally applied as a n-type semiconductor.Under the constant-repeating cyclic voltammerty;we nailed the memristive quality of our mental/semiconductor thin film device.Moreover,through multifarious analytical processes based on our doping,filming growing path,we build a rational model for our memristor‘s memristive conductance mechanism,which indicated the carrier motion and electron tunnel following the biasing voltage.Our work exhibited a new type of TiO_(2-x)-based memristor,and emerged a new way to explicate the single-stage-switching memristive feature,which might initiate a new guiding ideology in semiconductor memristor’s studying.

Progress of Si-based Optoelectronic Devices

Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

Literature Review of the Use of Zinc and Zinc Compounds in Paper-Based Microfluidic Devices

Zinc and its compounds, alloys and composites play an important role in the modern day world and find application in almost every aspect that can improve the quality of our lives. This ranges from supplements and pharmaceuticals that are meant to improve our health and wellbeing to additives meant to guard or reduce corrosion in metals. However, over the past several years, a new area of technology has been garnering a great deal of attention and has made use of zinc and its compounds. This is with reference to paper-based microfluidic technology that offers several advantages and that keeps expanding in the amount of applications it covers. In this paper, a review is offered for the applications that have used zinc or zinc compounds in paper-based microfluidic devices.

Parametric study on performance of bridge retrofitted by unseating prevention devices

Over the past decade, seismically induced damage to bridges has been widely reported following major earthquakes such as the 1994 Northridge, 1995 Kobe and 1999 Chi-Chi events. Since these earthquakes, restrainers and stoppers have been installed on bridges to prevent unseating and excessive displacements, respectively. Alternatively, column jacketing has also been proven to be effective. However, the enhanced shear strength may result in extra retrofitting works on the footing. For bridges damaged in the Chi-Chi earthquake, investigations revealed that most bridge columns experienced none-to-minor damage in the longitudinal direction. The reason for this unexpected performance was the construction practice of using a rubber bearing, which is an unbolted design that may slide under large lateral forces. In this paper, parametric studies on simply-supported bridges retrofitted by a restrainer or concrete shear key along the longitudinal and transverse axes were carried out. The research focuses on finding suitable combinations of the design force and gap spacing so the restrainer and concrete shear key can be used as an unseating prevention device, with respect to the allowable column damage in terms of displacement ductility under near-fault type earthquakes. A two-lane PCI-girder bridge was selected as the benchmark model. In the longitudinal direction, a total of nine combinations considering yielding strength and gap spacing for the restrainer were analyzed; while parameters for the concrete shear key were divided into three shear force levels and three gap spacings. In the transverse direction, a similar approach was adapted, except smaller gap spacing was used. For each of the above mentioned earthquakes, seven input ground motions were selected and their PGAs were adjusted to 0.36g and 0.45g as the Design earthquake and Maximum Considerable Earthquake, respectively. Based on the results of nonlinear time history analyses, proper parameters to design the restrainers and concrete shear keys are obtained. Responses obtained from numerical simulations under the Chi-Chi earthquake leaded to new implications to design those devices. Restrainer should not exceed its breaking strain and sufficient unseating length will be needed always. Concrete Shear key was determined by considering both displacement demand of the superstructure and displacement ductility of the column at the same time. Further study is needed to provide optimal design parameters for use in performance based bridge design.

A Review in the Core Technologies of 5G: Device-to-Device Communication, Multi-Access Edge Computing and Network Function Virtualization

5G is a new generation of mobile networking that aims to achieve unparalleled speed and performance. To accomplish this, three technologies, Device-to-Device communication (D2D), multi-access edge computing (MEC) and network function virtualization (NFV) with ClickOS, have been a significant part of 5G, and this paper mainly discusses them. D2D enables direct communication between devices without the relay of base station. In 5G, a two-tier cellular network composed of traditional cellular network system and D2D is an efficient method for realizing high-speed communication. MEC unloads work from end devices and clouds platforms to widespread nodes, and connects the nodes together with outside devices and third-party providers, in order to diminish the overloading effect on any device caused by enormous applications and improve users’ quality of experience (QoE). There is also a NFV method in order to fulfill the 5G requirements. In this part, an optimized virtual machine for middle-boxes named ClickOS is introduced, and it is evaluated in several aspects. Some middle boxes are being implemented in the ClickOS and proved to have outstanding performances.

Securing Display Path for Security-Sensitive Applications on Mobile Devices

While smart devices based on ARM processor bring us a lot of convenience,they also become an attractive target of cyber-attacks.The threat is exaggerated as commodity OSes usually have a large code base and suffer from various software vulnerabilities.Nowadays,adversaries prefer to steal sensitive data by leaking the content of display output by a security-sensitive application.A promising solution is to exploit the hardware visualization extensions provided by modern ARM processors to construct a secure display path between the applications and the display device.In this work,we present a scheme named SecDisplay for trusted display service,it protects sensitive data displayed from being stolen or tampered surreptitiously by a compromised OS.The TCB of SecDisplay mainly consists of a tiny hypervisor and a super light-weight rendering painter,and has only^1400 lines of code.We implemented a prototype of SecDisplay and evaluated its performance overhead.The results show that SecDisplay only incurs an average drop of 3.4%.

Flexible substructure online hybrid test system using conventional testing devices

This paper presents a substructure online hybrid test system that is extensible for geographically distributed tests. This system consists of a set of devices conventionally used for cyclic tests to load the tested substructures onto the target displacement or the target force. Due to their robustness and portability, individual sets of conventional loading devices can be transported and reconfigured to realize physical loading in geographically remote laboratories. Another appealing feature is the flexible displacement-force mixed control that is particularly suitable for specimens having large disparities in stiffness during various performance stages. To conduct a substructure online hybrid test, an extensible framework is developed, which is equipped with a generalized interface to encapsulate each substructure. Multiple tested substructures and analyzed substructures using various structural program codes can be accommodated within the single framework, simply interfaced with the boundary displacements and forces. A coordinator program is developed to keep the boundaries among all substructures compatible and equilibrated. An Interuet-based data exchange scheme is also devised to transfer data among computers equipped with different software environments. A series of online hybrid tests are introduced, and the portability, flexibility, and extensibility of the online hybrid test system are demonstrated.

MOS器件Hf基高k栅介质的研究综述

随着金属氧化物半导体(MOS)器件尺寸的持续缩小,HfO2因其介电常数(k)高、带隙大等特点,成为取代传统SiO2栅介质最有希望的候选材料.本文综述了Hf基高k栅介质薄膜的近年的研究进展.针对HfO2结晶温度低、在HfO2薄膜和Si衬底间易形成界面层导致漏电流大、界面态密度高、击穿电压低等问题,回顾了最近论文报道的两种策略,即掺杂改性和插入缓冲层.接着举例讨论了Hf基材料从二元到掺杂氧化物/复合物的演变、非Si衬底上淀积Hf基高k栅介质、Hf基高k栅介质的非传统MOS器件结构,为集成电路(IC)中MOS器件的长期发展提供一些思路.

运动监测柔性传感器中纸基材料的制备与应用

在现代科技飞速发展的背景下,可穿戴电子设备以其轻便、柔软、易于携带的特性,在医疗监测、康复治疗以及环境监控等多个领域展现出了巨大的应用潜力。这一趋势不仅促进了相关技术的进步,还对柔性储能材料与传感技术提出了更高的要求。因此,探索与开发成本低廉、性能卓越且易于集成的柔性充电电池和应变传感器成为研究的重点,这对推动可穿戴电子技术的发展具有深远的理论与实践意义。针对柔性摩擦电传感器在生产过程中存在的成本高、工艺复杂、环保性不佳等问题,提出了一种采用纸基导电银浆的柔性摩擦电传感器新方案。该传感器在监测人体运动状态方面表现出了优异的性能,能准确识别肘部和腕部的弯曲角度,区分不同的运动类型(如行走、快走、跑步)及健身动作(如踮脚、深蹲、抱腹跳),并能有效计算行走频率及健身次数。这些特性使其在人体运动监测领域展现出广阔的应用前景。

石墨烯纸基传感器在人体运动中的实验研究

随着可穿戴技术的飞速发展,柔性传感器因在定制医疗和人机互动中有应用前景而备受瞩目。受剪纸艺术启发,开发了一种新型剪纸结构的柔性纸基传感器。该传感器采用剪纸技术构建的石墨烯纸基材料,能够紧密贴合人体多个部位,旨在探索其在监测生理及运动信号方面的有效性。剪纸结构的设计不仅提高了传感器的敏感度和伸展性,还实现了其与皮肤的高度集成,为人体动态监测开辟了新途径。

不均衡小样本下多特征优化选择的生命体触电故障识别方法

针对现有的剩余电流保护装置无法有效识别触电事故的问题,该文提出了一种不均衡小样本下多特征优化选择的生命体触电故障识别方法。首先通过变分自编码器(VAE)对实验收集到的生命体触电小样本数据进行增殖以实现正负样本均衡;然后在时域上提取能够反映波形动态变化特性的23个特征量,并利用高斯核Fisher判别分析(GKFDA)与最大信息系数(MIC)法从中选择最优表达特征组;最后,提出基于遗忘因子的在线顺序极限学习机(FOS-ELM)算法实现生命体触电行为的鉴别。实验结果表明,所提方法利用不均衡小样本触电数据集就可以训练出一个优秀的分类模型,诊断准确率可达98.75%,诊断时间仅为1.33 ms。其优良的性能结合在线增量式学习分类器设计,使得模型具备新知识学习能力,具有极好的工程应用前景。

基于改进SqueezeNet算法的VBE设备电路板元件失效识别研究

在直流输电系统中,换流阀阀基电子VBE(valve base electronics)设备的稳定运作对维护直流系统安全至关重要。传统的阀基电子设备电路板(VBE板)元件失效检测方法依赖于耗时的人工检查或基于规则的自动化系统,这些方法通常检测效率低下且准确性有限。针对该问题,提出一种基于改进的SqueezeNet深度学习模型的VBE板元件失效区域识别方法。通过引入深度可分离卷积和残差连接,所提改进SqueezeNet模型旨在提高元件失效检测的准确性,同时降低计算资源的需求。在VBE板元件失效数据集上的实验结果表明,所提方法在元件失效检测准确率和运算效率方面均优于传统方法和标准SqueezeNet模型,准确率达到了95.27%,比原模型高出4.45%。不仅提升了VBE板元件失效检测的效率和准确性,而且为电力系统中类似设备的元件失效诊断提供了新的技术参考。

基于点模式匹配的直流输电VBE设备电路板缺陷检测方法

随着特高压直流输电技术飞速发展,换流阀阀基电子VBE(valve base electronics)设备的稳定性对于保障直流输电的可靠性和效率至关重要。VBE设备电路板缺陷,如短路和失效元件,直接影响直流系统稳定性,而现有的检测方法,包括人工显微镜检查和自动检测算法,常受限于效率低和准确性不足。针对该问题,提出一种基于点模式匹配的自动视觉检测方法,通过生成代表关键区域的点模式并进行匹配来提高检测的效率和准确率。通过实验验证,所提方法在检测速度和准确性方面相较于传统方法有显著提升,适合于生产线上的快速质量控制,为提高直流输电设备的质量提供了有效的技术方案。