Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.

Fabricating lifted Haar transform image compression optical chip based on femtosecond laser

In this paper,a lifted Haar transform(LHT)image compression optical chip has been researched to achieve rapid image compression.The chip comprises 32 same image compression optical circuits,and each circuit contains a 2×2 multimode interference(MMI)coupler and aπ/2 delay line phase shifter as the key components.The chip uses highly borosilicate glass as the substrate,Su8 negative photoresist as the core layer,and air as the cladding layer.Its horizontal and longitudinal dimensions are 8011μm×10000μm.Simulation results present that the designed optical circuit has a coupling ratio(CR)of 0:100 and an insertion loss(IL)of 0.001548 d B.Then the chip is fabricated by femtosecond laser and testing results illustrate that the chip has a CR of 6:94 and an IL of 0.518 d B.So,the prepared chip possesses good image compression performance.

4×4 nonblocking optical switch fabric based on cascaded multimode interferometers

We experimentally demonstrate a 4 × 4 nonblocking silicon thermo-optic(TO) switch fabric consisting of three stages of tunable generalized Mach–Zehnder interferometers. All 24 routing states for nonblocking switching are characterized. The device's footprint is 4.6 mm × 1.0 mm. Measurements show that the worst cross talk of all switching states is-7.2 dB. The on-chip insertion loss is in the range of 3.7–13.1 dB. The average TO switching power consumption is 104.8 mW.

Design and fabrication of wavelength tunable AWGs based on the thermo-optic effect

In this Letter, a 16 channel 200 GHz wavelength tunable arrayed waveguide grating（AWG） is designed and fabricated based on the silicon on insulator platform. Considering that the performance of the AWG, such as central wavelength and crosstalk, is sensitive to the dimension variation of waveguides, the error analysis of the AWG with width fluctuations is worked out using the transfer function method. A heater is designed to realize the wavelength tunability of the AWG based on the thermo-optic effect of silicon. The measured results show that the insertion loss of the AWG is about 6 d B, and the crosstalk is 7.5 d B. The wavelength tunability of 1.1 nm is achieved at 276 m W power consumption, and more wavelength shifts will gain at larger power consumption.

Fabrication of stable organometallic halide perovskite NWs based optoelectronic devices

Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous optical absorption ability[1,2]).These interesting photovoltaic properties together make them a promising candidate for high performance optoelectronic