A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique desi...A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.展开更多
In this paper,a lifted Haar transform(LHT)image compression optical chip has been researched to achieve rapid image compression.The chip comprises 32 same image compression optical circuits,and each circuit contains a...In this paper,a lifted Haar transform(LHT)image compression optical chip has been researched to achieve rapid image compression.The chip comprises 32 same image compression optical circuits,and each circuit contains a 2×2 multimode interference(MMI)coupler and aπ/2 delay line phase shifter as the key components.The chip uses highly borosilicate glass as the substrate,Su8 negative photoresist as the core layer,and air as the cladding layer.Its horizontal and longitudinal dimensions are 8011μm×10000μm.Simulation results present that the designed optical circuit has a coupling ratio(CR)of 0:100 and an insertion loss(IL)of 0.001548 d B.Then the chip is fabricated by femtosecond laser and testing results illustrate that the chip has a CR of 6:94 and an IL of 0.518 d B.So,the prepared chip possesses good image compression performance.展开更多
We experimentally demonstrate a 4 × 4 nonblocking silicon thermo-optic(TO) switch fabric consisting of three stages of tunable generalized Mach–Zehnder interferometers. All 24 routing states for nonblocking swit...We experimentally demonstrate a 4 × 4 nonblocking silicon thermo-optic(TO) switch fabric consisting of three stages of tunable generalized Mach–Zehnder interferometers. All 24 routing states for nonblocking switching are characterized. The device's footprint is 4.6 mm × 1.0 mm. Measurements show that the worst cross talk of all switching states is-7.2 dB. The on-chip insertion loss is in the range of 3.7–13.1 dB. The average TO switching power consumption is 104.8 mW.展开更多
In this Letter, a 16 channel 200 GHz wavelength tunable arrayed waveguide grating(AWG) is designed and fabricated based on the silicon on insulator platform. Considering that the performance of the AWG, such as cent...In this Letter, a 16 channel 200 GHz wavelength tunable arrayed waveguide grating(AWG) is designed and fabricated based on the silicon on insulator platform. Considering that the performance of the AWG, such as central wavelength and crosstalk, is sensitive to the dimension variation of waveguides, the error analysis of the AWG with width fluctuations is worked out using the transfer function method. A heater is designed to realize the wavelength tunability of the AWG based on the thermo-optic effect of silicon. The measured results show that the insertion loss of the AWG is about 6 d B, and the crosstalk is 7.5 d B. The wavelength tunability of 1.1 nm is achieved at 276 m W power consumption, and more wavelength shifts will gain at larger power consumption.展开更多
Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous...Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous optical absorption ability[1,2]).These interesting photovoltaic properties together make them a promising candidate for high performance optoelectronic展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11074280 and 11403084the Instrument Developing Project of Chinese Academy of Sciences under Grant No YZ201152+2 种基金the Fundamental Research Funds for Central Universities under Grant Nos JUSRP51323B and JUDCF12032the Joint Innovation Project of Jiangsu Province under Grant No BY2013015-19the Graduate Student Innovation Program for Universities of Jiangsu Province under Grant No CXLX12_0724
文摘A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.
基金the Natural Science Foundation of Hubei Province(No.2017CFB685)Hubei University of Technology"Advanced Manufacturing Technology and Equipment"Collaborative Innovation Center Open Research Fund(Nos.038/1201501 and 038/1201803)the College-level Project of Hubei University of Technology(Nos.4201/01758,4201/01802,4201/01889,and 4128/21025)。
文摘In this paper,a lifted Haar transform(LHT)image compression optical chip has been researched to achieve rapid image compression.The chip comprises 32 same image compression optical circuits,and each circuit contains a 2×2 multimode interference(MMI)coupler and aπ/2 delay line phase shifter as the key components.The chip uses highly borosilicate glass as the substrate,Su8 negative photoresist as the core layer,and air as the cladding layer.Its horizontal and longitudinal dimensions are 8011μm×10000μm.Simulation results present that the designed optical circuit has a coupling ratio(CR)of 0:100 and an insertion loss(IL)of 0.001548 d B.Then the chip is fabricated by femtosecond laser and testing results illustrate that the chip has a CR of 6:94 and an IL of 0.518 d B.So,the prepared chip possesses good image compression performance.
基金supported in part by the 863 program (2013AA014402)the National Natural Science Foundation of China (NSFC) (61422508)the Science and Technology Commission of Shanghai Municipality (STCSM) Project (14QA1402600)
文摘We experimentally demonstrate a 4 × 4 nonblocking silicon thermo-optic(TO) switch fabric consisting of three stages of tunable generalized Mach–Zehnder interferometers. All 24 routing states for nonblocking switching are characterized. The device's footprint is 4.6 mm × 1.0 mm. Measurements show that the worst cross talk of all switching states is-7.2 dB. The on-chip insertion loss is in the range of 3.7–13.1 dB. The average TO switching power consumption is 104.8 mW.
基金supported by the National Key R&D Program of China(No.2016YFB0402504)the National Nature Science Foundation of China(Nos.61435013and 61405188)
文摘In this Letter, a 16 channel 200 GHz wavelength tunable arrayed waveguide grating(AWG) is designed and fabricated based on the silicon on insulator platform. Considering that the performance of the AWG, such as central wavelength and crosstalk, is sensitive to the dimension variation of waveguides, the error analysis of the AWG with width fluctuations is worked out using the transfer function method. A heater is designed to realize the wavelength tunability of the AWG based on the thermo-optic effect of silicon. The measured results show that the insertion loss of the AWG is about 6 d B, and the crosstalk is 7.5 d B. The wavelength tunability of 1.1 nm is achieved at 276 m W power consumption, and more wavelength shifts will gain at larger power consumption.
文摘Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous optical absorption ability[1,2]).These interesting photovoltaic properties together make them a promising candidate for high performance optoelectronic