In the analysis of high-rise building, traditional displacement-based plane elements are often used to get the in-plane internal forces of the shear walls by stress integration. Limited by the singular problem produce...In the analysis of high-rise building, traditional displacement-based plane elements are often used to get the in-plane internal forces of the shear walls by stress integration. Limited by the singular problem produced by wall holes and the loss of precision induced by using differential method to derive strains, the displacement-based elements cannot always present accuracy enough for design. In this paper, the hybrid post-processing procedure based on the Hellinger-Reissner variational principle is used for improving the stress precision of two quadrilateral plane elements. In order to find the best stress field, three different forms are assumed for the displacement-based plane elements and with drilling DOF. Numerical results show that by using the proposed method, the accuracy of stress solutions of these two displacement-based plane elements can be improved.展开更多
An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotio...An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.展开更多
Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and...Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and bad pixel compensation. The proposed detection algorithm is a combination of median filtering and statistic method. Single frame median filtering is used to locate approximate map, then statistic method and threshold value is used to get the accurate location map of bad pixels. When the bad pixel detection is done, neighboring pixel replacement algorithm is used to compensate them in real-time. The effectiveness of this approach is test- ed by applying it to I-IgCATe infrared video. Experiments on real infrared imaging sequences demonstrate that the proposed algorithm requires only a few frames to obtain high quality corrections. It is easy to combine with traditional static methods, update the pre-defined location map in real-time.展开更多
文摘In the analysis of high-rise building, traditional displacement-based plane elements are often used to get the in-plane internal forces of the shear walls by stress integration. Limited by the singular problem produced by wall holes and the loss of precision induced by using differential method to derive strains, the displacement-based elements cannot always present accuracy enough for design. In this paper, the hybrid post-processing procedure based on the Hellinger-Reissner variational principle is used for improving the stress precision of two quadrilateral plane elements. In order to find the best stress field, three different forms are assumed for the displacement-based plane elements and with drilling DOF. Numerical results show that by using the proposed method, the accuracy of stress solutions of these two displacement-based plane elements can be improved.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)。
文摘An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
基金Sponsored by the National Natural Science Foundation of China(60877060)
文摘Based on the analysis to the behavior of bad pixels, a statistics-based auto-detecting and compensation algorithm for bad pixels is proposed. The correcting process is divided into two stages： bad pixel detection and bad pixel compensation. The proposed detection algorithm is a combination of median filtering and statistic method. Single frame median filtering is used to locate approximate map, then statistic method and threshold value is used to get the accurate location map of bad pixels. When the bad pixel detection is done, neighboring pixel replacement algorithm is used to compensate them in real-time. The effectiveness of this approach is test- ed by applying it to I-IgCATe infrared video. Experiments on real infrared imaging sequences demonstrate that the proposed algorithm requires only a few frames to obtain high quality corrections. It is easy to combine with traditional static methods, update the pre-defined location map in real-time.
