Corrosion inhibition of benzotriazole(BTA) and its derivative CBTME on Cu in 3%NaCl solution was studied by SERS technique. The inhibition mechanism for BTA and CBTME on copper corrosion in the solution was found to b...Corrosion inhibition of benzotriazole(BTA) and its derivative CBTME on Cu in 3%NaCl solution was studied by SERS technique. The inhibition mechanism for BTA and CBTME on copper corrosion in the solution was found to be similar each other, by which a protective film is formed through the triazole ring. The substituent group ( -COOCH 3 ) of CBTME plays the role in the inhibition effect due to steric hindrance. A combination of BTA and CBTME showed a synergistic effect and the inhibition mechanism remained the same as individual species.展开更多
文摘Corrosion inhibition of benzotriazole(BTA) and its derivative CBTME on Cu in 3%NaCl solution was studied by SERS technique. The inhibition mechanism for BTA and CBTME on copper corrosion in the solution was found to be similar each other, by which a protective film is formed through the triazole ring. The substituent group ( -COOCH 3 ) of CBTME plays the role in the inhibition effect due to steric hindrance. A combination of BTA and CBTME showed a synergistic effect and the inhibition mechanism remained the same as individual species.
文摘为确定苯并三唑(BTA)在铜的电解抛光液中的腐蚀抑制作用,研究铜在30%(质量分数)H3PO4+0.01 mol/L BTA抛光液中的电化学行为,测试铜在该抛光液中的极化曲线以及静态腐蚀量.应用原子力显微镜和能谱分析,观测不同阳极电势下静态腐蚀后的铜表面形貌并分析CuBTA膜的形成过程.结果表明,一定阳极电势范围下铜先行溶解,表面粗糙度加大,之后铜离子吸附BTA分子在表面逐渐形成CuBTA覆盖层,铜的溶解速度受到抑制,表面粗糙度稳定于一较低值.为保证CuBTA膜的形成,铜片所加的静态阳极电势应在0.5 V以下,本实验条件下形成稳定的CuBTA膜需要2 min.