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Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices
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作者 Ren-Ren Xu Qing-Zhu Zhang +4 位作者 Long-Da Zhou Hong Yang Tian-Yang Gai Hua-Xiang Yin Wen-Wu Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第1期529-534,共6页
A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking fro... A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn better.Moreover,the channel length dependence on NBTI is more serious than that on PBTI.Through the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is proposed.Both extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for n-FinFETs.The mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process. 展开更多
关键词 bias temperature instability(bti) channel length stress FINFET
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Body Bias Dependence of Bias Temperature Instability(BTI)in Bulk FinFET Technology
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作者 Jiayang Zhang Zirui Wang +2 位作者 Runsheng Wang Zixuan Sun Ru Huang 《Energy & Environmental Materials》 SCIE EI CAS CSCD 2022年第4期1200-1203,共4页
In this article,the body bias dependence of the bias temperature instability(BTI)in bulk FinFETs is experimentally studied,under different test conditions for the first time.In contrast to the traditional understandin... In this article,the body bias dependence of the bias temperature instability(BTI)in bulk FinFETs is experimentally studied,under different test conditions for the first time.In contrast to the traditional understanding that changing body bias has little impact on BTI degradation in FinFETs due to its weak body effect,it is observed that it actually has non-negligible impacts.And a forward body bias(FBB)can reduce the BTI degradation in FinFETs,which is opposite with the trend in planar devices.The underlying physics is found due to the trade-off between two competing factors.The results are helpful for understanding and modeling reliability in FinFETs. 展开更多
关键词 bias temperature instability(bti) body effect FINFET RELIABILITY
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SiC掺氯热氧化技术与SiC MOS电容偏压温度不稳定性
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作者 于洪权 尉升升 +4 位作者 刘兆慧 尹志鹏 白娇 谢威威 王德君 《半导体技术》 CAS 北大核心 2023年第5期380-388,共9页
偏压温度不稳定性(BTI)是影响SiC MOS器件性能的关键因素。提出了一种制备SiC MOS电容的新工艺,即在SiC干氧氧化气氛中掺入氯化氢(HCl),并对比了不同HCl与O_(2)体积流量比对SiC MOS电容电学性能的影响。结果表明,该工艺有效地改善了SiC ... 偏压温度不稳定性(BTI)是影响SiC MOS器件性能的关键因素。提出了一种制备SiC MOS电容的新工艺,即在SiC干氧氧化气氛中掺入氯化氢(HCl),并对比了不同HCl与O_(2)体积流量比对SiC MOS电容电学性能的影响。结果表明,该工艺有效地改善了SiC MOS电容的栅氧击穿特性,降低了界面态密度,提升了平带电压稳定性。二次离子质谱(SIMS)和X射线光电子能谱(XPS)测试分析表明,掺氯热氧化技术能够有效消除界面缺陷。进一步分析表明,SiC掺氯热氧化技术能够降低可动离子面密度和氧化层陷阱电荷密度,能够有效改善器件的BTI特性。 展开更多
关键词 碳化硅 MOS电容 热氧化 偏压温度不稳定性(bti) 阈值电压漂移
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Statistical static timing analysis for circuit aging prediction
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作者 Duan Shengyu Zhai Dongyao Lu Yue 《The Journal of China Universities of Posts and Telecommunications》 EI CSCD 2021年第2期14-23,共10页
Complementary metal oxide semiconductor(CMOS)aging mechanisms including bias temperature instability(BTI)pose growing concerns about circuit reliability.BTI results in threshold voltage increases on CMOS transistors,c... Complementary metal oxide semiconductor(CMOS)aging mechanisms including bias temperature instability(BTI)pose growing concerns about circuit reliability.BTI results in threshold voltage increases on CMOS transistors,causing delay shifts and timing violations on logic circuits.The amount of degradation is dependent on the circuit workload,which increases the challenge for accurate BTI aging prediction at the design time.In this paper,a BTI prediction method for logic circuits based on statistical static timing analysis(SSTA)is proposed,especially considering the correlation between circuit workload and BTI degradation.It consists of a training phase,to discover the relationship between circuit scale and the required workload samples,and a prediction phase,to present the degradations under different workloads in Gaussian probability distributions.This method can predict the distribution of degradations with negligible errors,and identify 50%more BTI-critical paths in an affordable time,compared with conventional methods. 展开更多
关键词 bias temperature instability(bti) reliability PREDICTION statistical static timing analysis(SSTA)
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