in an inductively-coupled plasma (ICP), the dependence of radio-frequency (rf) tuned self-DC bias of substrate on the discharge parameters such as rf source power, gas pressure, gas now rate and electric connection of...in an inductively-coupled plasma (ICP), the dependence of radio-frequency (rf) tuned self-DC bias of substrate on the discharge parameters such as rf source power, gas pressure, gas now rate and electric connection of upper cover with ground have been studied. Experimental results show that the tuned bias of substrate can be generated and independently controlled in an inductively- coupled plasma without a rf bias source, and the advantage of this technique together with inductively-coupled plasma can find potential applications in plasma-enhanced chemical vapor deposition.展开更多
基金This work is supported by the National Natural Science Foundation of China. No.19835030.
文摘in an inductively-coupled plasma (ICP), the dependence of radio-frequency (rf) tuned self-DC bias of substrate on the discharge parameters such as rf source power, gas pressure, gas now rate and electric connection of upper cover with ground have been studied. Experimental results show that the tuned bias of substrate can be generated and independently controlled in an inductively- coupled plasma without a rf bias source, and the advantage of this technique together with inductively-coupled plasma can find potential applications in plasma-enhanced chemical vapor deposition.
