High-efficiency electromagnetic interference(EMI)shielding materials are of great importance for electronic equipment reliability,information security and human health.In this work,bidirectional aligned Ti_(3)C_(2)T_(...High-efficiency electromagnetic interference(EMI)shielding materials are of great importance for electronic equipment reliability,information security and human health.In this work,bidirectional aligned Ti_(3)C_(2)T_(x)@Fe_(3)O_(4)/CNF aerogels(BTFCA)were firstly assembled by bidirectional freezing and freeze-drying technique,and the BTFCA/epoxy nanocomposites with long-range aligned lamellar structures were then prepared by vacuum-assisted impregnation of epoxy resins.Benefitting from the successful construction of bidirectional aligned three-dimensional conductive networks and electromagnetic synergistic effect,when the mass fraction of Ti_(3)C_(2)T_(x) and Fe_(3)O_(4) are 2.96 and 1.48 wt%,BTFCA/epoxy nanocomposites show outstanding EMI shield-ing effectiveness of 79 dB,about 10 times of that of blended Ti_(3)C_(2)T_(x)@Fe_(3)O_(4)/epoxy(8 dB)nanocomposites with the same loadings of Ti_(3)C_(2)T_(x) and Fe_(3)O_(4).Meantime,the corresponding BTFCA/epoxy nanocomposites also present excellent thermal stability(T_(heat-resistance index) of 198.7℃)and mechanical properties(storage modulus of 9902.1 MPa,Young’s modulus of 4.51 GPa and hardness of 0.34 GPa).Our fabricated BTFCA/epoxy nanocomposites would greatly expand the applications of MXene and epoxy resins in the fields of information security,aerospace and weapon manufacturing,etc.展开更多
We present a new sense amplifier circuit for EEPROM memory. The topology of the sense amplifier uses a voltage sensing method,having low cost and low power consumption as well as high reliability. The sense amplifier ...We present a new sense amplifier circuit for EEPROM memory. The topology of the sense amplifier uses a voltage sensing method,having low cost and low power consumption as well as high reliability. The sense amplifier was implemented in an EEPROM realized with an SMIC 0.35-μm 2P3M CMOS embedded EEPROM process. Under the condition that the power supply is 3.3 V,simulation results showed that the charge time is 35 ns in the proposed sense amplifier,and that the maximum average current consumption during the read period is 40 μA. The novel topology allows the circuit to function with power supplies as low as 1.4 V. The sense amplifier has been implemented in 2-kb EEPROM memory for RFID tag IC applications,and has a silicon area of only 240 μm2.展开更多
基金The authors are grateful for the supports from the National Natural Science Foundation of China(U21A2093 and 52203100)Y.L.Zhang would like to thank the Innovation Foundation for Doctor Dissertation of Northwestern Polytechnical University(CX2021107)。
文摘High-efficiency electromagnetic interference(EMI)shielding materials are of great importance for electronic equipment reliability,information security and human health.In this work,bidirectional aligned Ti_(3)C_(2)T_(x)@Fe_(3)O_(4)/CNF aerogels(BTFCA)were firstly assembled by bidirectional freezing and freeze-drying technique,and the BTFCA/epoxy nanocomposites with long-range aligned lamellar structures were then prepared by vacuum-assisted impregnation of epoxy resins.Benefitting from the successful construction of bidirectional aligned three-dimensional conductive networks and electromagnetic synergistic effect,when the mass fraction of Ti_(3)C_(2)T_(x) and Fe_(3)O_(4) are 2.96 and 1.48 wt%,BTFCA/epoxy nanocomposites show outstanding EMI shield-ing effectiveness of 79 dB,about 10 times of that of blended Ti_(3)C_(2)T_(x)@Fe_(3)O_(4)/epoxy(8 dB)nanocomposites with the same loadings of Ti_(3)C_(2)T_(x) and Fe_(3)O_(4).Meantime,the corresponding BTFCA/epoxy nanocomposites also present excellent thermal stability(T_(heat-resistance index) of 198.7℃)and mechanical properties(storage modulus of 9902.1 MPa,Young’s modulus of 4.51 GPa and hardness of 0.34 GPa).Our fabricated BTFCA/epoxy nanocomposites would greatly expand the applications of MXene and epoxy resins in the fields of information security,aerospace and weapon manufacturing,etc.
基金Project (No. 2006AA01Z226) supported by the Hi-Tech Research and Development Program (863) of China
文摘We present a new sense amplifier circuit for EEPROM memory. The topology of the sense amplifier uses a voltage sensing method,having low cost and low power consumption as well as high reliability. The sense amplifier was implemented in an EEPROM realized with an SMIC 0.35-μm 2P3M CMOS embedded EEPROM process. Under the condition that the power supply is 3.3 V,simulation results showed that the charge time is 35 ns in the proposed sense amplifier,and that the maximum average current consumption during the read period is 40 μA. The novel topology allows the circuit to function with power supplies as low as 1.4 V. The sense amplifier has been implemented in 2-kb EEPROM memory for RFID tag IC applications,and has a silicon area of only 240 μm2.
