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Bidirectional rectifier with gate voltage control based on Bi_(2)O_(2)Se/WSe_(2)heterojunction
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作者 Ruonan Li Fangchao Lu +3 位作者 Jiajun Deng Xingqiu Fu Wenjie Wang He Tian 《Journal of Semiconductors》 EI CAS CSCD 2024年第1期63-70,共8页
Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most ... Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most devices have a lower rectification ratio.In this work,the Bi_(2)O_(2)Se/WSe_(2)heterojunction prepared by us has a typeⅡband alignment,which can vastly suppress the channel current through the interface barrier so that the Bi_(2)O_(2)Se/WSe_(2)heterojunction device has a large rectification ratio of about 10^(5).Meanwhile,under different gate voltage modulation,the current on/off ratio of the device changes by nearly five orders of magnitude,and the maximum current on/off ratio is expected to be achieved 106.The photocurrent measurement reveals the behavior of recombination and space charge confinement,further verifying the bidirectional rectification behavior of heterojunctions,and it also exhibits excellent performance in light response.In the future,Bi_(2)O_(2)Se/WSe_(2)heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device. 展开更多
关键词 Bi_(2)O_(2)Se WSe_(2) HETEROJUNCTION bidirectional rectification optoelectronic devices
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