Spectral Calculation of the Output Voltage of an Inverter with Bipolar Pulse Width Modulation

Converters with pulse width modulation are used for connections between the direct current （DC） and alternating current （AC） networks, e.g., in uninterrupted power supply systems, AC electromotor drives, for powering induction furnaces, in audio technique. Spectrum of signals sampled by pulse amplitude modulation and output voltage spectrum of the converter with pulse width modulation have similar properties. Spectrum of signals sampled by pulse amplitude modulation contains a harmonic of frequency equal to the frequency of the modulating signal and the harmonics of frequencies equal to the sum of frequency of the modulating signal and multiples of the sampling frequency. The output voltage spectrum of the converter with bipolar pulse width modulation contains harmonic of frequency equal to the frequency of the modulating signal and harmonics of frequencies equal to sum of the frequency of the modulating signal and multiples of the frequency of the carrier signal. It also contains harmonics of frequencies equal to the sum of the multiples of the frequency of the modulating signal and the multiples of the carrier signal. The comparison analysis was carried out for the harmonics of the output voltage of the converter with bipolar pulse width modulation in time domain. The dependency of the amplitudes and frequency spectrum on the wave forms of the carrier signal and modulating signal was shown. Similarity of the output voltage spectrum of the converter and signal spectrum sampled by the pulse width modulation was also shown. Key words： Output voltage converter with bipolar pulse width modulation, spectral analysis, Fourier series, carrier signal, reference signal.

Numerical Study of Pulsed Dielectric Barrier Discharge at Atmospheric Pressure Under the Needle-Plate Electrode Configuration

In this paper, we study the characteristics of atmospheric-pressure pulsed dielectric barrier discharge （DBD） under the needle-plate electrode configuration using a one-dimensional self-consistent fluid model. The results show that, the DBDs driven by positive pulse, negative pulse and bipolar pulse possess different behaviors. Moreover, the two discharges appearing at the rising and the falling phases of per voltage pulse also have different discharge regimes. For the case of the positive pulse, the breakdown field is much lower than that of the negative pulse, and its propagation characteristic is different from the negative pulse DBD. When the DBD is driven by a bipolar pulse voltage, there exists the interaction between the positive and negative pulses, resulting in the decrease of the breakdown field of the negative pulse DBD and causing the change of the discharge behaviors. In addition, the effects of the discharge parameters on the behaviors of pulsed DBD in the needle-plate electrode configuration are also studied.

Radiation-induced 1/f noise degradation of bipolar linear voltage regulator

Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.

Single-event burnout hardening of planar power MOSFET with partially widened trench source

We present a single-event burnout（SEB） hardened planar power MOSFET with partially widened trench sources by three-dimensional（3 D） numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region（P-well region below the N＋ source）. The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer（LET）,which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to0.7 p C/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications.