The effects of Bi flux and pressure of AsH3 on Bi incorporation,surface morphology and optical properties of InGa As Bi grown by gas source molecular beam epitaxy are studied.It is found that using relatively low pres...The effects of Bi flux and pressure of AsH3 on Bi incorporation,surface morphology and optical properties of InGa As Bi grown by gas source molecular beam epitaxy are studied.It is found that using relatively low pressure of AsH3 and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value.The result from Rutherford backscattering spectroscopy（RBS） confirms that the Bi incorporation can increase up to 1.13%.By adjusting Bi and As flux,we could improve the surface morphology of In Ga As Bi sample.Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the In Ga As bandgap.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61434006)the National Basic Research Program of China(Grant No.2014CB643902)
文摘The effects of Bi flux and pressure of AsH3 on Bi incorporation,surface morphology and optical properties of InGa As Bi grown by gas source molecular beam epitaxy are studied.It is found that using relatively low pressure of AsH3 and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value.The result from Rutherford backscattering spectroscopy（RBS） confirms that the Bi incorporation can increase up to 1.13%.By adjusting Bi and As flux,we could improve the surface morphology of In Ga As Bi sample.Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the In Ga As bandgap.
