Synthesis and Microstructure of Partly-oriented Bismuth Layer Structure Ferroelectrics Ceramics SrBi_4Ti_4O_(15)

SrBi4Ti4O15 powder was synthesized by conventional solid state synthesis （ CS ） and molten salt synthesis （ MSS ） . MSS method can synthesize plate-like SrBi4Ti4O15 at lower temperature （900℃） than CS method. Plate-like form becomes more distinct when the synthesis temperature increases. This would help cause the grain orientation of the ceramics after sintering. The sintered samples of MSS had grain orientation at （0,0, 10） plane. The degree of （0,0,10） grain orientation F was 62.1% . Hot pressing made （0,0,10） grain orientation more distinct （ F = 85.7% ）. The microstructures of the sintered samples were detected by SEM. Due to the grain orientation the density of samples fabricated by MSS was lower than that of prepared by CS.

Structure and Properties of Mg-doped SrBi_4Ti_4O_(15) Bi-layered Compounds

The structure and properties of Mg-doped SrBi4Ti4O15（SBT） were dicussed. Mg substitution into SBT had two possibilities states with the dopant amount variety. Mg cation substituted mostly into Sr^2＋ and the amount proportion was 68.11%.Mg ion will substitute into Ti ion site in perovskite layer when the doping amount increases. Polarization increases sharply when x=0.1 and then decreases becauses of the domain pinning. The Curie temperature of Mg-doped SBT is about 300 ℃ and there is a broad diffuse phase transition near Tc with a flat peak near the Ta of SBT.

Study on Ferroelectric and Dielectric Properties of La-Doped CaBi_4Ti_4O_(15)-Based Ceramics

Lanthanum doped bismuth layer structured ferroelectrics （BLSFs） Ca1 - x LaxBi4 （Ti0.9W0. 1 ）4O15 （ x = 0, 0.2, 0.3, 0.4, 0.6） ceramics were prepared by solid-state reaction method. X-ray diffraction （XRD） patterns showed that single phase was formed when x = 0 - 0.6. The effects of La^3＋ doping on dielectric, piezoelectric and ferroelectric properties of Ca1-xLaxBi4（Ti0.9W0.1）4O15 ceramics were studied. Ca0.7La0.3Bi4（Ti0.9W0.1）4O15 ceramic had optimal properties, its dielectric constant was 166.85, dielectric loss was 0.0063, piezoelectric strain constant was 11 pc·N^-1, remanent polarization was 18.1μC·cm^-2 and coercive field was 118 kV·cm^-1. SEM micrographs showed that the grains of CaBi4Ti4O15-based ceramics were plate-like. The results of energy spectrum analysis （EDS） showed that La^3＋ incorporation could increase Bi/Ca ratio.

Photoluminescence and electrical properties of Eu^3＋-doped Na0.5Bi4.5Ti4O15-based ferroelectrics under blue light excitation

Na0.5Bi4.5-xEuxTi4O15 （NBT-xEu^3＋） ceramics with x= 0, 0.05, 0.10, 0.15, 0.20, 0.25, 0.30 and 0.40 were prepared by conventional ceramics processing. NBT-0.25Eu^3＋ ceramics show the strongest red and orange emissions corresponding to the 5D0 → 7F2 （617 nm） and 5D0→ 7F1 （596 nm） transitions, respectively. The strongest excitation band around 465 nm matches well with the emission wavelength of commercial InGaN-based blue LED chip, indicating that Eu^3＋-doped NBT ceramics may be used as potential environmental friendly red-orange phosphor for W-LEDs application. As an inherent ferroelectric and piezoelectric material, the electrical properties of this potentially multifunctional electro-optical material have been also studied. The introduction of Eu^3＋ distinctly increased the Curie temperature （Tc） of NBT-xEu^3＋ ceramics from 640℃ to 711℃ as x ranges from 0 to 0.40. For higher temperature applications, the electrical conductivity was also investigated. The conduction of charge carriers in hightemperature range originates from the conducting electrons from the ionization of oxygen vacancies. High Tc and low tanδ makes Eu^3＋-doped NBT ceramic also suitable for high temperature piezoelectric sensor applications and electro-optical integration.

Ce and W co-doped CaBi_(2)Nb_(2)O_(9) with enhanced piezoelectric constant and electrical resistivity at high temperature

Ce and W co-doped CaBi_(2)Nb_(2)O_(9) ceramics with chemical formula Ca_(0.96)Ce_(0.04)Bi_(2)Nb_(2-x)W_(x)O_(9)(CCBNW100x,x=0-0.07)are fabricated via conventional solid state sintering method,to investigate the effect of W addition on the structure,electrical resistivity,dielectric and piezoelectric properties.A piezoelectric constant d33 of 13.4 pC/N is obtained in CCBN-W2 ceramics,>100% higher than that of pure CaBi_(2)Nb_(2)O_(9)(d_(33)=5.8e6.4 pC/N).Of particular significance is that the electrical resistivity of CCBN-W2 ceramics(r=3.7×109 U cm at 500℃)is three orders of magnitude higher than pure CaBi_(2)Nb_(2)O_(9)(r=2.9×10^(6) U cm at same temperature).All these properties,together with its low dielectric loss(tandδ0.13%)and excellent d33 thermal stability up to 800℃,merit the CCBN-W2 ceramics for high temperature piezoelectric sensing applications.

DIELECTRIC,FERROELECTRIC,PIEZOELECTRIC AND IMPEDANCE STUDY OF LEAD-FREE CERAMIC:SrBi_(4)Ti_(3.975)Zr_(0.025)O_(15)

Polycrystalline SrBi_(4)Ti_(3.975)Zr_(0.025)O_(15)(SBTZ)was prepared using solid-state reaction technique.SBTZ was characterized by X-ray diffraction(XRD)and scanning electron microscopy(SEM).XRD analysis indicated the formation of a single-phase orthorhombic structure.Particle size was found using SEM.The dielectric,ferroelectric,piezoelectric,modulus and impedance spectroscopy studies on SBTZ were investigated in the frequency range 1Hz-1MHz from room temperature(RT)to 600℃.Piezoelectric charge and electromechanical coupling coefficients were calculated from resonance and anti-resonance frequencies.Impedance and modulus plots were used as tools to analyze the sample behavior as a function of frequency.Cole-Cole plots showed a non-Debye relaxation.Conductivity measurements were performed on SBTZ.