Thermoelectric power generators have attracted increasing interest in recent years owing to their great potential in wearable electronics power supply.It is noted that thermoelectric power generators are easy to damag...Thermoelectric power generators have attracted increasing interest in recent years owing to their great potential in wearable electronics power supply.It is noted that thermoelectric power generators are easy to damage in the dynamic service process,resulting in the formation of microcracks and performance degradation.Herein,we prepare a new hybrid hydrogel thermoelectric material PAAc/XG/Bi_(2)Se_(0.3)Te_(2.7)by an in situ polymerization method,which shows a high stretchable and self-healable performance,as well as a good thermoelectric performance.For the sample with Bi_(2)Se_(0.3)Te_(2.7)content of 1.5 wt%(i.e.,PAAc/XG/Bi2Se0.3Te27(1.5 wt%)),which has a room temperature Seebeck coefficient of-0.45 mV K^(-1),and exhibits an open-circuit voltage of-17.91 mV and output power of 38.1 nW at a temperature difference of 40 K.After being completely cut off,the hybrid thermoelectric hydrogel automatically recovers its electrical characteristics within a response time of 2.0 s,and the healed hydrogel remains more than 99%of its initial power output.Such stretchable and self-healable hybrid hydrogel thermoelectric materials show promising potential for application in dynamic service conditions,such as wearable electronics.展开更多
A kind of p-type segmented Bi2 Te3/CoSB3 thermoetectric material was preparea oy sparse ptasma sintering（ SPS ） . When the segmented materials were used at the temperature ranging from 300 K to 800 K, the junction t...A kind of p-type segmented Bi2 Te3/CoSB3 thermoetectric material was preparea oy sparse ptasma sintering（ SPS ） . When the segmented materials were used at the temperature ranging from 300 K to 800 K, the junction temperature was optimized, which is about 500 K, and the corresponding length ratio of CoSb3 to Bi2 Te3 is about 15 ： 2. The measured maximum power output of segmented materials is abont 320 W·m^-2, which is about 1.8 times as high as that of monolithic material CoSb3 under the same measuring conditions.展开更多
We have developed a novel thermoelectric gas sensors based on bismuth telluride thin films.These sensors were employed for sensing different concentrations of H_2 gas.Radio frequency (R.F.) magnetron sputtering was em...We have developed a novel thermoelectric gas sensors based on bismuth telluride thin films.These sensors were employed for sensing different concentrations of H_2 gas.Radio frequency (R.F.) magnetron sputtering was employed to deposit the bismuth telluride (Bi_2Te_3) thin films.The morphology of such thin films was investigated and responses of the thermoelectric devices to H_2 were studied.展开更多
Monodispersed Bi-Tenano arrays are achieved via template-free bipotentiostatic deposition. The diameter and length of individual nanorod is ~80 nm and ~250 nm respectively. The electrodeposition process is demonstrate...Monodispersed Bi-Tenano arrays are achieved via template-free bipotentiostatic deposition. The diameter and length of individual nanorod is ~80 nm and ~250 nm respectively. The electrodeposition process is demonstrated to follow a two-step mechanism: an instantaneous reductive potential is applied to form dispersive nuclei, then a reverse oxidative potential strips partial Bi atoms to prevent further cross-growth. Repeatedly, the nano arrays film is obtained eventually. The thermoelectric properties of the obtained Bi-Tenano arrays such as electrical resistance, carrier density, Seebeck coefficient and power factor are measured to be 2.438 × 10-4?Ω·m, 4.251 × 1020 cm-3, -25.892 μV·K-1, 2.750 × 10-6 W·m-1·K2, respectively.展开更多
An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt, ...An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt, this reductive Te underpotential deposition （UPD）/reductive Bi UPD cycle was performed to 100 layers. A better linearity of the stripping charge with the number of cycles has been shown and confirmed a layer-by-layer growth mode, which is consistent with an epitaxial growth. The 4∶3 stoichiometric ratio of Bi to Te suggests that the incomplete charge transfer in HTeO+2 reduction excludes the possibility of Bi2Te3 formation. X-ray photoelectron spectroscopy （XPS） analysis also reveals that the incomplete charge transfer in HTeO+2 occurs in Te direct deposition. The effective way of depositing Bi2Te3 on Pt consists in oxidative Te UPD and reductive Bi UPD. The thin film deposited by this procedure was characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM） and X-ray photoelectron spectroscopy（XPS）. A polycrystalline characteristic was confirmed by XRD. The 2∶3 stoichiometric ratio was confirmed by XPS. The SEM image indicates that the deposit looks like a series of buttons about （0.30.4 μm） in diameter, which is corresponding with calculated thickness of the epitaxial film. This suggests that the particle growth appears to be linear with the number of cycles, as it is consistent with a layer by layer growth mode.展开更多
A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tell...A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential （-0.35 V） than bismuth （-0.5 V） in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from -1 to -1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.展开更多
Bismuth telluride-based alloys are the most widely used commercial thermoelectric(TE)material for room temperature refrigeration.Here,we successfully shift up the optimum figure of merit of n-type bismuth-telluride-ba...Bismuth telluride-based alloys are the most widely used commercial thermoelectric(TE)material for room temperature refrigeration.Here,we successfully shift up the optimum figure of merit of n-type bismuth-telluride-based TE materials for mid-temperature power generation.SbI_(3)doping is used to regulate the carrier concentration and Indium alloying to increase the bandgap,suppressing the detrimental bipolar conduction in the mid-temperature range.The lattice thermal conductivity is significantly reduced due to the multiscale microstructures induced via hot deformation.As a result,a peak zT of~1.1 was attained at 625 K for Bi_(1.85)In_(0.15)Te_(2)Se+0.25 wt%SbI_(3)alloy after hot deformation,showing a great application prospect of this alloy in mid-temperature TE power generation.展开更多
基金supported by the National Natural Science Foundation of China under Grant Nos.92163211,52002137,51872102,and 51802070the Fundamental Research Funds for the Central Universities under Grant Nos.2021XXJS008 and 2018KFYXKJC002Graduates’Innovation Fund,Huazhong University of Science and Technology under Grant No.2020yjs CXCY022
文摘Thermoelectric power generators have attracted increasing interest in recent years owing to their great potential in wearable electronics power supply.It is noted that thermoelectric power generators are easy to damage in the dynamic service process,resulting in the formation of microcracks and performance degradation.Herein,we prepare a new hybrid hydrogel thermoelectric material PAAc/XG/Bi_(2)Se_(0.3)Te_(2.7)by an in situ polymerization method,which shows a high stretchable and self-healable performance,as well as a good thermoelectric performance.For the sample with Bi_(2)Se_(0.3)Te_(2.7)content of 1.5 wt%(i.e.,PAAc/XG/Bi2Se0.3Te27(1.5 wt%)),which has a room temperature Seebeck coefficient of-0.45 mV K^(-1),and exhibits an open-circuit voltage of-17.91 mV and output power of 38.1 nW at a temperature difference of 40 K.After being completely cut off,the hybrid thermoelectric hydrogel automatically recovers its electrical characteristics within a response time of 2.0 s,and the healed hydrogel remains more than 99%of its initial power output.Such stretchable and self-healable hybrid hydrogel thermoelectric materials show promising potential for application in dynamic service conditions,such as wearable electronics.
基金Funded by the Major International Cooperation Programof Na-tional Science Foundation of China (No.50310353)
文摘A kind of p-type segmented Bi2 Te3/CoSB3 thermoetectric material was preparea oy sparse ptasma sintering（ SPS ） . When the segmented materials were used at the temperature ranging from 300 K to 800 K, the junction temperature was optimized, which is about 500 K, and the corresponding length ratio of CoSb3 to Bi2 Te3 is about 15 ： 2. The measured maximum power output of segmented materials is abont 320 W·m^-2, which is about 1.8 times as high as that of monolithic material CoSb3 under the same measuring conditions.
文摘We have developed a novel thermoelectric gas sensors based on bismuth telluride thin films.These sensors were employed for sensing different concentrations of H_2 gas.Radio frequency (R.F.) magnetron sputtering was employed to deposit the bismuth telluride (Bi_2Te_3) thin films.The morphology of such thin films was investigated and responses of the thermoelectric devices to H_2 were studied.
文摘Monodispersed Bi-Tenano arrays are achieved via template-free bipotentiostatic deposition. The diameter and length of individual nanorod is ~80 nm and ~250 nm respectively. The electrodeposition process is demonstrated to follow a two-step mechanism: an instantaneous reductive potential is applied to form dispersive nuclei, then a reverse oxidative potential strips partial Bi atoms to prevent further cross-growth. Repeatedly, the nano arrays film is obtained eventually. The thermoelectric properties of the obtained Bi-Tenano arrays such as electrical resistance, carrier density, Seebeck coefficient and power factor are measured to be 2.438 × 10-4?Ω·m, 4.251 × 1020 cm-3, -25.892 μV·K-1, 2.750 × 10-6 W·m-1·K2, respectively.
基金Project(50401008) supported by the Chinese National Natural Science Foundation Project(2004CCA03200) supportedby the National Basic Research Program
文摘An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt, this reductive Te underpotential deposition （UPD）/reductive Bi UPD cycle was performed to 100 layers. A better linearity of the stripping charge with the number of cycles has been shown and confirmed a layer-by-layer growth mode, which is consistent with an epitaxial growth. The 4∶3 stoichiometric ratio of Bi to Te suggests that the incomplete charge transfer in HTeO+2 reduction excludes the possibility of Bi2Te3 formation. X-ray photoelectron spectroscopy （XPS） analysis also reveals that the incomplete charge transfer in HTeO+2 occurs in Te direct deposition. The effective way of depositing Bi2Te3 on Pt consists in oxidative Te UPD and reductive Bi UPD. The thin film deposited by this procedure was characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM） and X-ray photoelectron spectroscopy（XPS）. A polycrystalline characteristic was confirmed by XRD. The 2∶3 stoichiometric ratio was confirmed by XPS. The SEM image indicates that the deposit looks like a series of buttons about （0.30.4 μm） in diameter, which is corresponding with calculated thickness of the epitaxial film. This suggests that the particle growth appears to be linear with the number of cycles, as it is consistent with a layer by layer growth mode.
基金supported by the National Natural Science Foundation of China(No.50731006)
文摘A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential （-0.35 V） than bismuth （-0.5 V） in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from -1 to -1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.
基金This work was supported by the National Natural Science Foundation of China(11574267,51571177 and 61534001)the National Natural Science Fund for Distinguished Young Scholars(51725102).
文摘Bismuth telluride-based alloys are the most widely used commercial thermoelectric(TE)material for room temperature refrigeration.Here,we successfully shift up the optimum figure of merit of n-type bismuth-telluride-based TE materials for mid-temperature power generation.SbI_(3)doping is used to regulate the carrier concentration and Indium alloying to increase the bandgap,suppressing the detrimental bipolar conduction in the mid-temperature range.The lattice thermal conductivity is significantly reduced due to the multiscale microstructures induced via hot deformation.As a result,a peak zT of~1.1 was attained at 625 K for Bi_(1.85)In_(0.15)Te_(2)Se+0.25 wt%SbI_(3)alloy after hot deformation,showing a great application prospect of this alloy in mid-temperature TE power generation.
