Photocatalysis is an effective way to solve the problems of environmental pollution and energy shortage.Numerous photocatalysts have been developed and various strategies have been proposed to improve the photocatalyt...Photocatalysis is an effective way to solve the problems of environmental pollution and energy shortage.Numerous photocatalysts have been developed and various strategies have been proposed to improve the photocatalytic performance.Among them,Bi-based photocatalysts have become one of the most popular research topics due to their suitable band gaps,unique layered structures,and physicochemical properties.In this review,Bi-based photocatalysts(BiOX,BiVO_(4),Bi_(2)S_(3),Bi_(2)MoO_(6),and other Bi-based photocatalysts)have been summarized in the field of photocatalysis,including their applications of the removal of organic pollutants,hydrogen production,oxygen production etc.The preparation strategies on how to improve the photocatalytic performance and the possible photocatalytic mechanism are also summarized,which could supply new insights for fabricating high-efficient Bi-based photocatalysts.Finally,we summarize the current challenges and make a reasonable outlook on the future development direction of Bi-based photocatalysts.展开更多
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated...In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.展开更多
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing a...This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
The wavelength-tunable rectangular mode-locking operation is demonstrated in an all-fiber laser based on semi- conductor saturable absorber mirror. As the dissipative soliton resonance signature, the pulse duration va...The wavelength-tunable rectangular mode-locking operation is demonstrated in an all-fiber laser based on semi- conductor saturable absorber mirror. As the dissipative soliton resonance signature, the pulse duration varies from 5SOps to 2.1 ns as a function o~ the increasing pump power. Correspondingly, the maximum pulse energy is 9.11 n3. Moreover, it is found that the wavelength tunable operation with a range of approximately 10 nm could be obtained by properly adjusting the polarization controllers. The characteristics of the rectangular pulses at different wavelengths are similar to each other. The demonstration of the wavelength tunable rectangular pulses would be beneficial to some applications for many fields such as spectroscopy and sensing research.展开更多
With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investig...With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.展开更多
A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to...A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.展开更多
Single crystals of a bismuth-based coordination polymer(CP)with carboxyl-thiol ligands,[Bi(C_(8)H_(2)O_(4)S_(2))(C2H8N)]n(Bi-DSBDC-DMA,DMBDC=2,5-disulfur-1,4-dicarboxylate,DMA=dimethylamine),have been successfully syn...Single crystals of a bismuth-based coordination polymer(CP)with carboxyl-thiol ligands,[Bi(C_(8)H_(2)O_(4)S_(2))(C2H8N)]n(Bi-DSBDC-DMA,DMBDC=2,5-disulfur-1,4-dicarboxylate,DMA=dimethylamine),have been successfully synthesized.X-ray diffraction analysis reveals that Bi-DSBDC-DMA possesses a layered structure,with two-dimensional(2D)Bi-DSBDC networks alternating with layers composed of dimethylamine ions.This material demonstrates semiconducting properties,featuring an optical bandgap of 2.2 eV and an electrical conductivity of 2×10^(-8) S/cm.Furthermore,electrodes based on this material exhibit a capacity of 250 mAh/g after 200 cycles for lithium-ion storage.展开更多
基金We gratefully acknowledge the support of this research by the National Natural Science Foundation of China(52172206,21871078)the Heilongjiang Province Natural Science Foundation of China(JQ2019B001)+4 种基金the Shandong Province Natural Science Foundation(ZR2021MB016)the Heilongjiang Provincial Institutions of Higher Learning Basic Research Funds Basic Research Projects(2021-KYYWF-0007)the Heilongjiang Postdoctoral Startup Fund(LBH-Q14135)the Heilongjiang University Science Fund for Distinguished Young Scholars(JCL201802)the Development plan of Youth Innovation Team in Colleges and Universities of Shandong Province.
文摘Photocatalysis is an effective way to solve the problems of environmental pollution and energy shortage.Numerous photocatalysts have been developed and various strategies have been proposed to improve the photocatalytic performance.Among them,Bi-based photocatalysts have become one of the most popular research topics due to their suitable band gaps,unique layered structures,and physicochemical properties.In this review,Bi-based photocatalysts(BiOX,BiVO_(4),Bi_(2)S_(3),Bi_(2)MoO_(6),and other Bi-based photocatalysts)have been summarized in the field of photocatalysis,including their applications of the removal of organic pollutants,hydrogen production,oxygen production etc.The preparation strategies on how to improve the photocatalytic performance and the possible photocatalytic mechanism are also summarized,which could supply new insights for fabricating high-efficient Bi-based photocatalysts.Finally,we summarize the current challenges and make a reasonable outlook on the future development direction of Bi-based photocatalysts.
文摘In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
基金We are grateful for financial supports from the Major Program of National Natural Science Foundation of China （61790584）.
文摘This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2014AA041901the NSAF Foundation of National Natural Science Foundation of China under Grant No U1330134+1 种基金the Opening Project of Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques under Grant No 2012ADL02the National Natural Science Foundation of China under Grant No 61308024
文摘The wavelength-tunable rectangular mode-locking operation is demonstrated in an all-fiber laser based on semi- conductor saturable absorber mirror. As the dissipative soliton resonance signature, the pulse duration varies from 5SOps to 2.1 ns as a function o~ the increasing pump power. Correspondingly, the maximum pulse energy is 9.11 n3. Moreover, it is found that the wavelength tunable operation with a range of approximately 10 nm could be obtained by properly adjusting the polarization controllers. The characteristics of the rectangular pulses at different wavelengths are similar to each other. The demonstration of the wavelength tunable rectangular pulses would be beneficial to some applications for many fields such as spectroscopy and sensing research.
基金the support from the National Major Project of Fundamental Research:Nanomaterials and Nanostructures(Grant No.2005CB623603)the National Natural Science Foundation of China(Grant No.10674138)the Special Fund for President Scholarship,Chinese Academy of Sciences.
文摘With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.
基金supported by the National Natural Science Foundation of China (Grant No. 60876027)the State Key Program of the National Natural Science Foundation of China (Grant No. 61036004)+2 种基金the Shenzhen Science and Technology Foundation, China (Grant No. CXB201005250031A)the Fundamental Research Project of Shenzhen Science and Technology Foundation, China (Grant No. JC201005280670A)the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A)
文摘A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.
基金supported by the Research Projects of Department of Education of Guangdong Province(No.2023KTSCX319)the National Natural Science Foundation of China(No.92372114).
文摘Single crystals of a bismuth-based coordination polymer(CP)with carboxyl-thiol ligands,[Bi(C_(8)H_(2)O_(4)S_(2))(C2H8N)]n(Bi-DSBDC-DMA,DMBDC=2,5-disulfur-1,4-dicarboxylate,DMA=dimethylamine),have been successfully synthesized.X-ray diffraction analysis reveals that Bi-DSBDC-DMA possesses a layered structure,with two-dimensional(2D)Bi-DSBDC networks alternating with layers composed of dimethylamine ions.This material demonstrates semiconducting properties,featuring an optical bandgap of 2.2 eV and an electrical conductivity of 2×10^(-8) S/cm.Furthermore,electrodes based on this material exhibit a capacity of 250 mAh/g after 200 cycles for lithium-ion storage.
